PTF 10147 GOLDMOS ® Field Effect Transistor 10 Watts, 1.0 GHz Description The PTF 10147 is a 10–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates with 58% efficiency and 16.5 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Performance at 960 MHz, 26 Volts - Output Power = 10 Watts - Efficiency = 58% Typ - Power Gain = 16.5 dB Typ Full Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel 100% Lot Traceability Typical Output Power vs. Input Power 16 80 2 XWS XW3RZHU 70 12 60 10 50 Efficiency 8 40 6 30 V DD = 26 V IDQ = 80 mA f = 960 MHz 4 2 20 Efficiency (%)X Output Power (Watts) 14 E PT F1 01 47 10 0 0 0.0 0.1 0.2 0.3 0.4 Input Power (Watts) RF Specifications Package 20244 (Guaranteed) Characteristic Common Source Power Gain (VDD = 26 V, POUT = 10 W, IDQ = 80 mA, f = 960 MHz) Symbol Min Typ Max Units Gps 15.0 16.5 — dB P-1dB 10 12 — Watts h 50 58 — % Y — — 10:1 — Output Power at 1 dB Compressed (VDD = 26 V, IDQ = 80 mA, f = 960 MHz) Drain Efficiency (VDD = 26 V, POUT = 10 W, IDQ = 80 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 10 W, IDQ = 80 mA, f = 960 MHz— all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated. e 1 e PTF 10147 Electrical Characteristics (Guaranteed) Characteristic Conditions Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Symbol Min Typ Max Units BVDSS 65 — — Volts Drain-Source Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA Gate on Voltage VDS = 26 V, ID = 80 mA VGS(on) 3 — 5 Volts Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation PD Above 25°C derate by 46 Watts 0.26 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RqJC 3.8 °C/W 70 Gain 16 V DD = 26 V IDQ = 80 mA 16 60 14 Ef f iciency 12 50 Gain (dB)x 70 Gain Ef ficiency 12 2 XWS XW3RZHU 10 860 880 900 920 940 40 V DD = 26 V IDQ = 80 mA POUT = 10 W 8 Return Loss 40 960 4 920 Frequency (MHz) 930 940 950 Frequency (MHz) 2 55 - 8 - 9 25 -10 -11 -12 10 960 Return Loss (dB) 80 20 18 20 Efficiency (%) Broadband Test Fixture Performance Typica l P OU T, Ga in & Efficiency (at P-1dB) vs. Frequency Efficiency (%)x Output Power (W) & Gain (dB) Typical Performance e PTF 10147 Typical Performance (cont.) Power Gain vs. Output Power Output Power vs. Supply Voltage 18.0 16 IDQ = 80 mA 15 Output Power (Watts) Power Gain (dB) x 17.5 17.0 16.5 IDQ = 40 mA 16.0 V DD = 26 V f = 960 MHz 15.5 IDQ = 20 mA 1 10 13 12 11 IDQ = 80 mA f = 960 MHz 10 9 8 15.0 0 14 24 100 26 28 30 32 Supply Voltage (Volts) Output Power (Watts) Intermodulation Distortion vs. Output Power Capa citance vs. Supply Volta ge (as measured in a broadband circuit) 40 3rd Order -30 5th -40 -50 7th -60 30 5.0 4.5 Cgs 25 4.0 3.5 20 3.0 Cds 15 2.5 10 2.0 Cdg 5 1.5 0 -70 0 2 4 6 8 10 1.0 0 12 10 20 Gate-Source Voltage vs. Case Temperature 1.03 Voltage normalized to 1.0 V Series show current (A) 1.02 1.01 1.00 0.1 0.29 0.48 0.67 0.86 1.05 0.99 0.98 0.97 0.96 0.95 -20 30 Supply Voltage (Volts) Output Power (Watts-PEP) Gate-Source Voltage (V) IMD (dBc) -20 Cds and Cgs (pF) x V DD = 26 V, IDQ = 80 mA f 1 = 959.9 MHz, f 2 = 960.0 MHz -10 5.5 V GS = 0 V f = 1 MHz 35 30 80 Case Temperature (°C) 3 130 40 Cdg (pF)x 0 e PTF 10147 Impedance Data Z0 = 50 W VDD = 26 V, IDQ = 80 mA, P-1dB = 10 W D Z Source Z Load G S Z Source W Frequency Z Load W MHz R jX R jX 860 0.8 3.7 6.0 8.6 880 1.0 3.5 7.0 8.5 900 1.0 3.3 7.6 7.4 920 1.0 3.1 8.4 7.5 960 1.0 2.0 8.7 9.0 Typical Scattering Parameters (VDS = 26 V, ID = 200 mA) f (MHz) Mag S11 Ang Mag S21 Ang Mag S12 Ang Mag Ang 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 0.939 0.917 0.903 0.898 0.897 0.904 0.908 0.910 0.916 0.919 0.924 0.931 0.934 0.937 0.936 0.942 0.948 0.947 0.950 0.953 0.956 0.956 0.959 0.960 0.962 0.966 0.967 0.969 0.972 -94.3 -117 -130 -139 -145 -150 -154 -156 -159 -161 -163 -165 -166 -168 -169 -171 -172 -173 -175 -176 -177 -178 -179 180 179 178 177 176 175 22.5 17.3 13.5 10.9 8.90 7.43 6.29 5.41 4.68 4.08 3.60 3.20 2.86 2.57 2.31 2.09 1.91 1.72 1.57 1.45 1.34 1.24 1.13 1.05 0.978 0.912 0.851 0.791 0.747 117 101 88.6 79.3 71.5 64.9 58.7 53.3 48.4 44.0 40.0 36.3 33.0 29.9 26.7 24.1 21.5 19.6 17.3 14.6 12.8 11.5 9.6 7.6 5.3 4.3 3.2 0.9 -0.3 0.021 0.023 0.023 0.023 0.022 0.021 0.020 0.018 0.017 0.016 0.014 0.013 0.012 0.011 0.009 0.008 0.007 0.006 0.006 0.004 0.004 0.003 0.003 0.003 0.003 0.004 0.004 0.004 0.005 30.6 14.8 3.14 -5.63 -12.3 -17.9 -23.3 -27.1 -30.7 -32.8 -35.8 -37.8 -40.8 -40.7 -41.2 -40.0 -37.0 -38.5 -37.7 -25.4 -17.8 -9.27 4.67 18.0 40.5 48.5 61.5 61.7 66.6 0.782 0.714 0.689 0.691 0.702 0.722 0.741 0.763 0.784 0.802 0.814 0.835 0.846 0.850 0.866 0.875 0.884 0.879 0.884 0.897 0.896 0.895 0.908 0.909 0.910 0.920 0.922 0.917 0.928 -51.1 -65.5 -76.1 -85.3 -92.8 -99.7 -106 -111 -116 -120 -125 -128 -131 -135 -138 -140 -142 -145 -148 -149 -151 -153 -155 -156 -158 -160 -161 -163 -164 4 S22 e PTF 10147 Test Circuit Test Circuit Schematic for f = 960 MHz DUT l1 l2 l3 l4 l5 l6 l7 l8 PTF 10147 0.590 l 960 GHz 0.094 l 960 GHz 0.085 l 960 GHz 0.006 l 960 GHz 0.015 l 960 GHz 0.200 l 960 GHz 0.033 l 960 GHz 0.043 l 960 GHz LDMOS Field Effect Transistor Microstrip 50 W Microstrip 6.6 W Microstrip 6.6 W Microstrip 43 W Microstrip 43 W Microstrip 13.7 W Microstrip 50 W Microstrip 50 W C1 C2,C3,C5,C8 C4 C6 C7 C9 L1 R1, R2, R3 Circuit Board Assembly Diagram (not to scale) 5 2.1 pF Capacitor, 100 B 2 R1 36 pF Capacitor, 100 B 360 0.2 pF Capacitor, 100 B 0R2 0.1 µF Capacitor, Digi-Key P4525 100 mF, 50 V Capacitor, Digi-Key P5182 2.4 pF Capacitor, 100 A 2R4 4 Turns, 20 AWG, .120" DIA I.D. 220 W 1/4 W Resistor, Digi-Key 2.2QBK .031" thick, er = 4.0, G200, AlliedSignal, 2 oz. copper e PTF 10147 Test Circuit (cont.) Artwork (not to scale) Case Outline Specifications Case 20244 Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 6 Specifications subject to change without notice. L3 © Ericsson Inc. 1999, 2001-2002 – All Rights Reserved EUS/KR 1522-PTF 10147 Uen Rev. B 04-11-02