PTF 10139 60 Watts, 860-960 MHz GOLDMOS ® Field Effect Transistor Description The PTF 10139 is a GOLDMOS FET intended for amplifier applications to 860-960 MHz. This 60–watt device operates at 55% efficiency with 12.5 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Performance at 960 MHz, 28 Volts - Output Power = 60 Watts Min - Power Gain = 12.5 dB Typ - Efficiency = 55% Typ • • • • • • Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability Back Side Common Source 100% Lot Traceability Available in Package 20256 as PTF 10138 Typical Output Power & Efficiency vs. Input Power 70 80 e Output Power 70 50 60 40 50 Efficiency 30 40 VDD = 28 V 20 30 IDQ = 500 mA f = 960 MHz 10 101 Drain Efficiency (%) X Output Power (Watts) 60 10 1 2 3 39 20 0 0 Package 20251 A-1 234 561 199 Also available in Package 20256 4 Input Power (Watts) e 1013 3456 8 A-12 2700 RF Specifications (100% Tested) Characteristic Common Source Power Gain (VDD = 28 V, POUT = 60 W, IDQ = 500 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 500 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 60 W, IDQ = 500 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 60 W, IDQ = 500 mA, f = 960 MHz— all phase angles at frequency of test) Symbol Min Typ Max Units Gps 11.5 12.5 — dB P-1dB 60 — — Watts h 50 55 — % Y — — 10:1 — All published data at TCASE = 25°C unless otherwise indicated. e 1 e PTF 10139 Electrical Characteristics Characteristic (100% Tested) Conditions Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Symbol Min Typ Max Units V(BR)DSS 65 — — Volts Drain-Source Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 mA Gate-Source Leakage Current VGS = 20 V, VDS = 0 V IGSS — — 1 mA Gate Threshold Voltage VDS = 10 V, ID = 75 mA VGS(th) 3.0 — 5.0 Volts Forward Transconductance VDS = 10 V, ID = 3 A gfs — 2.8 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDS 65 Vdc Gate-Source Voltage VGS ±20 Vdc Drain Current - Continuous ID 7 Adc Operating Junction Temperature TJ 200 °C Total Device Dissipation PD Above 25°C derate by 194 Watts 1.11 W/°C Storage Temperature Range TSTG -65 to 150 °C Thermal Resistance (TCASE = 70°C) RqJC 0.9 °C/W Typical Performance 80 Gain VDD = 28 V 12 70 IDQ = 500 mA Output Power (W) 11 60 10 9 840 Efficiency (%) 860 880 900 920 940 50 40 960 13 50 12 40 11 VDD = 28 V Gain (dB) IDQ = 500 mA 10 POUT = 60 W Return Loss (dB) 8 920 930 940 Frequency (MHz) Frequency (MHz) 2 30 - 5 20 -15 10 9 950 Efficiency Gain (dB) 13 60 Efficiency (%) -25 0 960 Return Loss 90 Gain 14 Broadband Test Fixture Performance 14 Output Power & Efficiency Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency e PTF 10139 Power Gain vs. Output Power Output Power vs. Supply Voltage 14 75 Output Power (Watts) Power Gain (dB) IDQ = 500 mA 13 IDQ = 320 mA 12 IDQ = 225 mA VDD = 28 V f = 960 MHz 11 70 65 60 IDQ = 500 mA f = 960 MHz 55 50 10 0 1 24 100 26 28 30 32 Supply Voltage (Volts) Output Power (Watts) Intermodulation Distortion vs. Output Power Capacitance vs. Supply Voltage (as measured in a broadband circuit) 140 VDD = 28 V 120 24 -20 f1 = 959.90 MHz f2 = 960.00 MHz -40 5th 7th -50 20 Cgs 100 VGS = 0 V f = 1 MHz 80 16 12 Cds 60 8 40 4 20 Crss 0 -60 10 20 30 40 50 60 0 70 Output Power (Watts-PEP) 10 Bias Voltage vs. Case Temperature Voltage normalized to 1.0 V Series show current (A) 1.03 1.02 1.01 0.4 1.364 2.328 3.292 4.256 5.22 1.00 0.99 0.98 0.97 0.96 0.95 -20 20 30 Supply Voltage (Volts) 1.04 Gate-Source Voltage (V) 0 30 80 Case Temperature (°C) 3 130 0 40 Crss (pF) Cds & Cgs (pF) IDQ = 500 mA -30 IMD (dBc) 3rd Order e PTF 10139 5 0. Impedance Data VDD = 28 V, POUT = 60 W, IDQ = 500 mA D 0. 05 0. 4 Z Load 0.4 5 Z Source Z0 = 10 W 0.3 ---> G TO R 0.74 860 0.56 0.56 2.20 0.72 900 0.55 0.80 1.80 0.95 920 0.58 0.90 1.80 1.10 960 0.65 1.10 1.80 1.30 850 MHz 850 MHz 0.1 Typical Scattering Parameters (VDS = 28 V, ID = 1.5 A) f (MHz) Mag S11 Ang Mag S21 Ang Mag S12 Ang Mag Ang 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 0.941 0.949 0.958 0.968 0.975 0.973 0.974 0.982 0.985 0.981 0.979 0.986 0.984 0.986 0.992 0.990 0.983 0.984 0.993 0.991 0.986 0.982 0.990 0.991 0.986 -175 -176 -178 -179 -179 180 179 178 177 177 176 175 175 174 173 173 172 171 171 171 170 169 169 169 168 2.70 2.09 1.71 1.40 1.20 1.03 0.892 0.788 0.671 0.576 0.489 0.425 0.378 0.342 0.316 0.294 0.264 0.245 0.228 0.211 0.192 0.179 0.173 0.159 0.146 36.8 32.7 28.3 24.7 22.3 18.0 14.6 10.5 6.38 3.31 0.641 0.228 0.643 -0.107 -0.098 -0.827 -1.69 -2.59 -3.43 -3.76 -4.91 -4.94 -5.51 -5.77 -5.99 0.028 0.022 0.017 0.013 0.009 0.006 0.003 0.001 0.003 0.004 0.007 0.008 0.010 0.011 0.014 0.016 0.018 0.020 0.022 0.023 0.025 0.028 0.030 0.029 0.030 -82.1 -82.7 -83.6 -82.9 -83.4 -78.3 -71.0 -19.9 44.0 68.8 71.9 70.1 76.6 79.0 81.0 80.6 78.5 76.4 76.2 76.6 76.4 73.3 69.4 67.2 66.3 0.993 0.990 0.991 0.994 0.998 0.996 0.996 0.996 0.997 0.999 0.996 0.990 0.992 0.994 0.996 0.989 0.985 0.990 0.993 0.987 0.986 0.988 0.986 0.990 0.985 -175 -176 -178 -179 -179 -180 180 179 178 178 177 176 176 176 175 175 174 173 173 173 173 172 172 171 171 4 S22 0.5 2.35 0.4 0.40 0.3 0.60 0.2 850 960 MHz 0.1 jX A R 0.0 E RA TOW AR D GEN jX Z Load 960 MHz V E LE R - WAV E LE NGT HS MHz Z Source TO W A RD LO AD NG THS Z Load W 0.1 Z Source W Frequency 0 .2 S e PTF 10139 Test Circuit Test Circuit Schematic for f = 960 MHz D.U.T. PTF 10139 l1 l2 l3 l4 l4 l4 l5 l6 0.190 l 960 MHz 0.075 l 960 MHz 0.141 l 960 MHz 0.017 l 960 MHz 0.122 l 960 MHz 0.191 l 960 MHz 0.015 l 960 MHz 0.225 l 960 MHz Microstrip 50 W Microstrip 15.7 W Microstrip 5.2 W Microstrip 5.2 W Microstrip 8.3 W Microstrip 8.3 W Microstrip 50 W Microstrip 50 W C1, C8 C2, C3, C5, C9 C4 C6 C7 J1, J2 L1 R1, R2, R3 Circuit Board Assembly Diagram (not to scale) 5 Capacitor, 3.0 pF 100 B 3r0 Capacitor, 36 pF 100 B 360 Capacitor, 2.0 pF 100 B 2r0 Capacitor, 0.1 mF, 50 V Digi-Key P4525-ND Capacitor, 100 mF, 50 V Digi-Key P5182-ND Connector, SMA, Female, Panel Mount Ericsson, #Rpm 513 412/53 4 Turns, 22 Awg, .120 I.D. Resistor, 220ohm, 1/4w Digi-key 220qbk-no .031” thick, er = 4.0, 2 Oz Copper, G200,Allied Signal e PTF 10139 10138_B INPUT 10138_A OUTPUT Artwork (not to scale) Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 6 Specifications subject to change without notice. L3 © 1999, 2000 Ericsson Inc. EUS/KR 1522-PTF 10139 Uen Rev. A2 12-03-00