Ordering number:ENN6407 N-Channel Silicon MOSFET FW208 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2129 [FW208] 8 5 4 1.27 0.595 Specifications 0.43 0.1 1.5 5.0 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 0.2 1.8max 1 6.0 4.4 · Low ON resistance, ultrahigh-speed switching, composite type with 2 N-channel MOSFETs driving from a 4V supply voltage contained in a single package, facilitating high-density mounting. · Matched pair capability. 0.3 Features Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit 60 V ±20 V 3 A ID Drain Current (pulse) IDP PW≤10µs, duty cycle≤1% 12 A Allowable Power Dissipation Mounted on a ceramic board (1200mm2×0.8mm) 1unit 1.7 W Total Dissipation PD PT 2.0 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Mounted on a ceramic board (1200mm2×0.8mm) Electrical Characteristics at Ta = 25˚C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS ID=1mA, VGS=0 VDS=60V, VGS=0 IGSS VGS(off) VGS=±16V, VDS=0 | yfs | Static Drain-to-Source On-State Resistance Conditions RDS(on)1 RDS(on)2 VDS=10V, ID=1mA VDS=10V, ID=2A Ratings min typ max 60 V 100 µA ±10 µA 2.5 V 110 145 mΩ 140 195 mΩ 1.0 3 ID=2A, VGS=10V ID=2A, VGS=4V Unit 5 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30300TS (KOTO) TA-2507 No.6407-1/4 FW208 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss VDS=20V, f=1MHz 370 pF Output Capacitance Coss 120 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz VDS=20V, f=1MHz 20 pF Turn-ON Delay Time td(on) See specified Test Circuit 13 ns tr See specified Test Circuit 30 ns td(off) See specified Test Circuit 100 ns tf See specified Test Circuit 60 IS=4A, VGS=0 0.9 Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage VSD Switching Time Test Circuit ns 1.2 V Electrical Connection (Top view) VDD=30V VIN 10V 0V D1 D1 D2 D2 S1 G1 S2 G2 ID=2A RL=15Ω VIN D PW=10µs D.C.≤1% VOUT G FW208 50Ω P.G S ID -- VDS 3.5 5 V 1.5 1.0 VGS=2.5V 0.5 0 25°C °C 3 2 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Drain-to-Source Voltage, VDS – V 1.6 0 0.20 0.15 0.10 0.05 0 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS – V 18 20 IT01135 1.5 2.0 2.5 3.0 3.5 4.0 IT01134 RDS(on) -- Ta 0.30 Static Drain-to-Source On-State Resistance, RDS(on) – Ω 0.25 1.0 Gate-to-Source Voltage, VGS – V Ta=25°C ID=2A 0 0.5 IT01133 RDS(on) -- VGS 0.30 Static Drain-to-Source On-State Resistance, RDS(on) – Ω Ta=7 5 2.0 4 --25° C Drain Current, ID – A 3.0 4.0 10.0V Drain Current, ID – A 2.5 ID -- VGS VDS=10V 5.0V V 8.0V 6.0V 3.0 6 0.25 0.20 =4V VGS 2A, V = ID =10 VGS , A 2 I D= 0.15 0.10 0.05 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta – ˚C 120 140 160 IT01136 No.6407-2/4 FW208 5 Ta 75 1.0 °C 7 5 3 3 2 1.0 7 5 3 2 0.1 7 5 3 2 2 0.1 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT01137 Drain Current, ID – A 0 0.2 0.6 0.4 0.8 1.0 Diode Forward Voltage, VSD – V SW Time -- ID 1000 7 5 Switching Time, SW Time – ns °C 25 C 5° -2 =- 2 VGS = 0 C 25°C --25°C 3 IF -- VSD 10 7 5 Ta=75 ° 7 yfs -- ID VDS=10V Forward Current, IF – A Forward Transfer Admittance, | yfs | – S 10 Ciss, Coss, Crss -- VDS 1000 VDD=30V VGS=10V f=1MHz 7 5 3 2 100 7 5 Ciss, Coss, Crss – pF td(off) tf 3 tr 2 td(on) 10 7 5 Ciss 3 2 Coss 100 7 5 Crss 3 3 1.2 IT01138 2 2 1.0 0.1 10 2 3 5 7 2 1.0 3 5 7 Drain Current, ID – A 1m ID=3A s era tio n Ta=25°C Single pulse Mounted on a ceramic board (1200mm2×0.8mm) 1 unit 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS – V 1.2 IT01141 nit 0.8 0.6 0.4 0.2 0 5 7 100 1u 1.0 n op 1.4 tio s 1.8 1.7 1.6 a ip DC 0m 2.0 iss 10 1.0 7 5 3 2 s 30 IT01140 lD 10 m 0.01 0.01 Allowable Power Dissipation (FET1), PD – W 0µ s 25 ta Allowable Power Dissipation, PD – W IDP=12A 10 20 PD -- Ta 2.2 Operation in this area is limited by RDS(on). 15 10 Drain-to-Source Voltage, VDS – V ASO 10 7 5 3 2 0.1 7 5 3 2 5 IT01139 To Drain Current, ID – A 100 7 5 3 2 0 10 Mounted on a ceramic board (1000mm2×0.8mm) 0 20 40 60 80 100 120 Ambient Temperature, Ta – ˚C 140 160 IT01142 PD(FET1) -- PD(FET2) 1.8 M ou nte 1.6 do na 1.4 ce ram 1.2 ic bo ard 1.0 (1 20 0m 0.8 m2 ×0 .8m 0.6 m) 1u nit 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Allowable Power Dissipation (FET2), PD – W IT01481 No.6407-3/4 FW208 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice. PS No.6407-4/4