MCH6630 Ordering number : ENN8240 N-Channel Silicon MOSFET MCH6630 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. High resistance to damage from ESD (TYP 300V). [with a protection diode connected between the gate and source] Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 Gate-to-Source Voltage (*1) VGSS 10 V ID 0.7 A Drain Current (DC) Drain Current (Pulse) IDP PD Allowable Power Dissipation V PW≤10µs, duty cycle≤1% 2.8 A Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C (*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source. Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VDS=10V, ID=350mA 0.45 Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=350mA, VGS=4V ID=200mA, VGS=2.5V Input Capacitance RDS(on)3 Ciss ID=10mA, VGS=1.5V VDS=10V, f=1MHz Coss Crss Unit max 30 0.4 Forward Transfer Admittance Reverse Transfer Capacitance typ VGS=8V, VDS=0 VDS=10V, ID=100µA VGS(off) yfs Output Capacitance Ratings min V 1 µA 1 µA 1.3 0.8 0.7 0.9 Ω 0.8 1.15 Ω 1.6 2.4 30 VDS=10V, f=1MHz VDS=10V, f=1MHz Marking : WE V S Ω pF 7 pF 3.5 pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31005PE TS IM TB-00001332 No.8240-1/4 MCH6630 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 8 Rise Time tr td(off) See specified Test Circuit. 6 ns See specified Test Circuit. 10 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge See specified Test Circuit. 8 ns VDS=10V, VGS=10V, ID=700mA 1 nC 0.4 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=700mA VDS=10V, VGS=10V, ID=700mA Diode Forward Voltage VSD IS=700mA, VGS=0 Package Dimensions 0.25 5 4 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 1 2 3 Top view 0.15 1.6 1 6 5 4 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 1 2 3 SANYO : MCPH6 0.07 0.25 2.1 6 6 3 2 0.65 nC 1.2 V Electrical Connection 0.3 5 0.2 0.93 unit : mm 2173A 4 ns 0.85 2.0 Switching Time Test Circuit VIN VDD=15V 4V 0V ID=350mA RL=42Ω VIN D VOUT PW=10µs D.C.≤1% G MCH6630 ID -- VDS ID -- VGS 0.8 Ta= --25 °C 25 ° C 0.2 5°C --25 °C 0.4 25° 0.1 0.6 VDS=10V Ta= 7 6.0V VGS=1.5V 0.2 Drain Current, ID -- A 2.0 V 3.5 0.3 4.0V Drain Current, ID -- A V 2.5 V 3.0 V 0.4 75° C S C 50Ω P.G 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 1.0 IT07510 0 0.5 1.0 1.5 2.0 2.5 Gate-to-Source Voltage, VGS -- V 3.0 3.5 IT07511 No.8240-2/4 MCH6630 RDS(on) -- VGS 4.0 3.0 350mA 2.0 ID=200mA 1.0 0 0 2.0 1.0 3.0 4.0 5.0 6.0 7.0 Gate-to-Source Voltage, VGS -- V A, 200m I D= 0.8 =4.0V A, V GS 0m I D=35 0.6 0.4 0.2 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 IT09242 IF -- VSD VGS=0 2 2 1.0 °C --25 5°C 3 7 2 ° 25 C 3 2 0.1 7 5 3 0.1 C Ta= --25° 5 5 5°C 7 7 Ta= 7 1.0 25°C Forward Current, IF -- A Forward Transfer Admittance, yfs -- S =2.5V VGS 1.0 3 2 7 2 3 5 7 2 0.1 3 5 Drain Current, ID -- A 0.01 0.2 7 1.0 IT07514 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V SW Time -- ID 3 Ciss, Coss, Crss -- VDS 60 2 1.4 IT07515 f=1MHz VDD=15V VGS=4V 50 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 1.2 0 --60 8.0 VDS=10V 5 0.01 td(off) 10 td(on) tf 7 tr 5 40 Ciss 30 20 Coss 10 3 2 0.1 5 3 7 0 1.0 IT07516 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 2.5 2.0 1.5 1.0 0.5 0 0.2 15 20 25 30 IT09243 RDS(on) -- ID VGS=4V 3.0 0.1 10 3 VDS=10V ID=0.7A 0 5 Drain-to-Source Voltage, VDS -- V VGS -- Qg 4.0 3.5 Crss 0 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 1.4 IT09241 yfs -- ID 3 RDS(on) -- Ta 1.6 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 5.0 0.3 0.4 0.5 0.6 0.7 Total Gate Charge, Qg -- nC 0.8 0.9 1.0 IT09244 2 1.0 Ta=75°C 25°C --25°C 7 5 3 0.01 2 3 5 7 0.1 2 Drain Current, ID -- A 3 5 7 1.0 IT07519 No.8240-3/4 MCH6630 RDS(on) -- ID Static Drain-to-Source On-State Resistance, RDS(on) -- Ω VGS=2.5V 2 Ta=75°C 1.0 25°C --25°C 7 5 3 0.01 2 3 5 7 2 0.1 3 5 5 3 1.0 IT07520 10 0 1m µs s Drain Current, ID -- A ID=0.7A 10 m 3 2 s 0m op s tio n Operation in this area is limited by RDS(on). 0.1 7 5 3 10 era 2 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.01 0.1 2 3 5 7 1.0 2 3 Ta=75°C 2 --25°C 25°C 1.0 7 2 3 5 5 7 10 Drain-to-Source Voltage, VDS -- V 2 7 2 0.1 3 IT07521 PD -- Ta 1.0 <10µs DC 3 Drain Current, ID -- A ASO IDP=2.8A 2 1.0 7 5 VGS=1.5V 5 5 0.01 7 Drain Current, ID -- A RDS(on) -- ID 7 Allowable Power Dissipation, PD -- W Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 3 0.8 M ou nt 0.6 ed on ac er am ic bo ar 0.4 d( 90 0m m2 ✕0 .8m 0.2 m )1 un it 0 3 5 IT09245 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT09246 Note on usage : Since the MCH6630 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2005. Specifications and information herein are subject to change without notice. PS No.8240-4/4