SANYO FTD8002

FTD8002
Ordering number : ENN7752
FTD8002
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
•
•
•
•
Ultralow ON-resistance.
2.5V drive.
Mount height 1.1mm.
Best suited for switching of lithium-ion battery with drain common.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
30
Gate-to-Source Voltage
VGSS
±12
V
8
A
Drain Current (DC)
ID
Drain Current (Pulse)
V
IDP
PD
PW≤10µs, duty cycle≤1%
40
A
Mounted on a ceramic board (1000mm2✕0.8mm)1unit
1.4
W
PT
Tch
Mounted on a ceramic board (1000mm2✕0.8mm)
Channel Temperature
Storage Temperature
Tstg
Allowable Power Dissipation
Total Dissipation
1.45
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
V(BR)DSS
IDSS
IGSS
Conditions
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS(off)
yfs
VGS= ±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=8A
RDS(on)1
RDS(on)2
ID=8A, VGS=4.5V
ID=6A, VGS=4V
RDS(on)3
RDS(on)4
ID=4A, VGS=3.1V
ID=4A, VGS=2.5V
Ratings
min
typ
Unit
max
30
V
1
±10
0.5
1.3
11
19
µA
µA
V
S
7
13
17
mΩ
7.5
14
19
mΩ
8.5
15
22
mΩ
9.5
17
24
mΩ
Marking : D8002
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
73004PA TS IM TA-100774 No.7752-1/4
FTD8002
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Input Capacitance
Ciss
pF
Coss
VDS=10V, f=1MHz
VDS=10V, f=1MHz
2610
Output Capacitance
310
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
300
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
30
ns
Rise Time
tr
td(off)
See specified Test Circuit.
195
ns
See specified Test Circuit.
220
ns
tf
See specified Test Circuit.
185
ns
Total Gate Charge
Qg
VDS=10V, VGS=4V, ID=8A
26
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=4V, ID=8A
3.5
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=4V, ID=8A
Diode Forward Voltage
VSD
IS=8A, VGS=0
Turn-OFF Delay Time
Fall Time
8.0
0.82
nC
1.2
V
Package Dimensions
unit : mm
2231
5
0.5
8
0.425
0.95
3.0
0.65
4.5
6.4
1 : Drain
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain
4
0.125
(0.95)
1
1.0
0.25
0.1
SANYO : TSSOP8
Switching Time Test Circuit
Electrical Connection
VDD=15V
VIN
D S2 S2 G2
4V
0V
ID=8A
RL=1.88Ω
VIN
D
VOUT
PW=10µs
D.C.≤1%
G
FTD8002
P.G
50Ω
D S1 S1 G1
S
No.7752-2/4
FTD8002
ID -- VDS
V
VDS=10V
7
3
2
0.10
0.15
0.20
0.25
0.30
0.35
Drain-to-Source Voltage, VDS -- V
0.40
0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
6A
40
4A
35
30
25
20
15
10
5
2
4
6
8
10
Gate-to-Source Voltage, VGS -- V
12
Forward Current, IF -- A
25
°C
C
5°
--2
=
°C
Ta
75
3
2
1.0
7
5
3
1.8
1.6
2.0
IT07071
V
A,
I D=4
V
=2.5
, VGS
20
15
=3.1
VGS
A
I D=4
,
=4.5V I D=6A
VGS
,
A
8
I D=
10
=4V
VGS
5
--50
--25
0
25
50
75
100
125
150
175
IT07073
IF -- VSD
VGS=0
3
2
1.0
7
5
3
2
0.1
7
5
3
2
2
0.1
0.01
1.4
25
10
7
5
2
10
7
5
1.2
Ambient Temperature, Ta -- °C
VDS=10V
3
1.0
30
IT07072
yfs -- ID
5
0.8
RDS(on) -- Ta
0
--75
0
0
0.6
35
ID=8A
45
0.4
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
50
0.2
IT07070
5 °C
25°
C
--25
°C
0.05
Ta=
7
0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
2
0
0
Forward Transfer Admittance, yfs -- S
3
1
1
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Drain Current, ID -- A
0.01
0.2
5 7 10
IT07074
SW Time -- ID
3
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Diode Forward Voltage, VSD -- V
1.1
IT07075
Ciss, Coss, Crss -- VDS
10000
VDD=15V
VGS=4V
2
f=1MHz
7
5
1000
7
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
4
--25°
C
4
5
25°C
VGS=1.5V
6
Ta=7
5°C
Drain Current, ID -- A
5
ID -- VGS
8
2.0
4.0
V
6
4.5V
Drain Current, ID -- A
7
3.0
V 2.5
V
8
5
td (off)
3
2
tf
100
tr
7
5
td(on)
3
2
1000
7
5
Coss
Crss
3
2
2
10
0.01
Ciss
3
100
2
3
5 7 0.1
2
3
5 7 1.0
Drain Current, ID -- A
2
3
5 7 10
IT07076
0
5
10
15
20
25
Drain-to-Source Voltage, VDS -- V
30
IT07077
No.7752-3/4
FTD8002
VGS -- Qg
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
5
0
10
15
20
25
Total Gate Charge, Qg -- nC
To
ta
lD
0.8
1u
nit
iss
ipa
tio
n
0.4
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
10
10
7
5
3
2
140
160
IT07080
0µ
s
1m
10
s
m
10
s
0m
s
1.0
7
5
3
2
Operation in this area
is limited by RDS(on).
0.1
7
5
3
2
DC operation (Ta=25°C)
Ta=25°C
Single pulse
Mounted on a ceramic board (1000mm2✕0.8mm) 1unit
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2
Drain-to-Source Voltage, VDS -- V
Allowable Power Dissipation(FET1), PD -- W
Allowable Power Dissipation, PD -- W
1.2
<10µs
ID=8A
IT07078
Mounted on a ceramic board(1000mm2✕0.8mm)
1.45
1.40
IDP=40A
0.01
0.01
30
PD -- Ta
1.6
ASO
100
7
5
3
2
VDS=10V
ID=8A
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
4.0
3
5 7
IT07079
PD -- PD
1.6
1.4
M
ou
1.2
nte
do
na
1.0
ce
ram
ic
0.8
bo
ard
(10
00
0.6
mm
2
✕0
.8m
0.4
m)
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Allowable Power Dissipation(FET2), PD -- W IT07081
Note on usage : Since the FTD8002 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2004. Specifications and information herein are subject
to change without notice.
PS No.7752-4/4