GF4412 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 28mΩ ID 7A H C N TREENFET G ® SO-8 0.197 (5.00) 0.189 (4.80) 8 5 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) 1 Dimensions in inches and (millimeters) 4 0.020 (0.51) 0.013 (0.33) 0.050 (1.27) 0.05 (1.27) 0.04 (1.02) 0.019 (0.48) x 45 ° 0.010 (0.25) 0.009 (0.23) 0.007 (0.18) 0.035 (0.889) 0.025 (0.635) 0.069 (1.75) 0.053 (1.35) 0 °– 8 ° 0.009 (0.23) 0.004 (0.10) 0.165 (4.19) 0.155 (3.94) 0.245 (6.22) Min. 0.050 typ. (1.27) Mounting Pad Layout 0.050(1.27) 0.016 (0.41) Mechanical Data Features Case: SO-8 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position: Any Weight: 0.5g • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter A = 25°C unless otherwise noted) Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 ID 7 5.8 IDM 30 Continuous Source Current (Diode Conduction)(1) IS 2.3 TA = 25°C TA = 70°C PD 2.5 1.6 W TJ, Tstg –55 to 150 °C RθJA 50 °C/W TA = 25°C TA = 70°C Continuous Drain Current TJ = 150°C(1) Pulsed Drain Current Maximum Power Dissipation(1) Operating Junction and Storage Temperature Range (1) Maximum Junction-to-Ambient Thermal Resistance Notes: (1) Surface mounted on FR4 board, t ≤ 10 sec. Unit V A 7/10/01 GF4412 N-Channel Enhancement-Mode MOSFET Electrical Characteristics (T J Parameter = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 – – V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 – 3 V Gate-Body Leakage IGSS VGS = ± 20V, VDS = 0V – – ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V – – 1 VDS = 30V, VGS = 0V, TJ = 55°C – – 5 On-State Drain Current(1) ID(on) VDS ≥ 5V, VGS = 10V 30 – – VGS = 10V, ID = 7A – 20 28 VGS = 4.5V, ID = 3.5A – 29 42 VDS = 15V, ID = 7A – 16 – – 16 23 – 2.2 – – 2.4 – – 6 12 – 5 10 – 25 37 – 7 14 Static Drain-Source On-State Resistance(1) RDS(on) Forward Transconductance(1) gfs µA A mΩ S Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDS = 15V, ID = 2A VGS = 10V VDD = 15V, ID = 1A VGEN = 10V, RG = 6Ω RL = 15Ω Turn-Off Fall Time tf Input Capacitance Ciss VDS = 15V – 810 – Output Capacitance Coss VGS = 0V – 150 – Reverse Transfer Capacitance Crss f = 1.0MHZ – 75 – VSD IS = 2A, VGS = 0V – 0.75 1.3 nC ns pF Source-Drain Diode Diode Forward Voltage(1) V Notes: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% VDD ton Switching Test Circuit RD VIN VOUT D Switching Waveforms td(on) RG tr td(off) tf 90 % 90% Output, VOUT VGEN toff 10% 10% INVERTED DUT G 90% 50% S Input, VIN 50% 10% PULSE WIDTH GF4412 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics 30 4.5V VGS=10V 6.0 V 25 5.0 V 4.0V VDS = 10V 25 20 ID -- Drain Current (A) ID -- Drain Source Current (A) 30 3.5V 15 10 3.0V 20 15 TJ = 125°C 10 --55°C 5 5 25°C 2.5V 0 0 0 1 2 3 4 1 2 3 4 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) Fig. 3 – Threshold Voltage vs. Temperature Fig. 4 – On-Resistance vs. Drain Current 1.8 5 0.04 1.6 RDS(ON) -- On-Resistance (Ω) VGS(th) -- Threshold Voltage (V) ID = 250µA 1.4 1.2 1 0.8 0.6 --50 0 25 50 75 100 125 150 1.6 VGS = 10V ID = 7A RDS(ON) -- On-Resistance (Normalized) 5V 0.025 0.02 10V 0.015 1.4 1.2 1 0.8 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 0 5 10 15 20 ID -- Drain Current (A) Fig. 5 – On-Resistance vs. Junction Temperature --50 VGS = 4.5V 0.03 0.01 --25 TJ -- Junction Temperature (°C) 0.6 0.035 125 150 25 30 GF4412 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 6 – On-Resistance vs. Gate-to-Source Voltage Fig. 7 – Gate Charge 10 0.1 VDS = 15V ID = 7A VGS -- Gate-to-Source Voltage (V) RDS(ON) -- On-Resistance (Ω) ID = 7A 0.08 0.06 TJ = 125°C 0.04 0.02 25°C 8 6 4 2 0 0 2 4 6 8 10 0 2 4 6 8 10 12 14 VGS -- Gate-to-Source Voltage (V) Qg -- Gate Charge (nC) Fig. 8 – Capacitance Fig. 9 – Source-Drain Diode Forward Voltage 1000 16 100 VGS = 0V f = 1MHz VGS = 0V Ciss IS -- Source Current (A) C -- Capacitance (pF) 800 600 400 200 Coss Crss 0 0 5 10 15 20 VDS -- Drain-to-Source Voltage (V) 25 30 10 TJ = 125°C 1 25°C 0.1 0.01 0 0.2 0.4 0.6 --55°C 0.8 1 VSD -- Source-to-Drain Voltage (V) 1.2 1.4 GF4412 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 10 – Breakdown Voltage vs. Junction Temperature Fig. 11 – Transient Thermal Impedance 42 40 39 38 37 36 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (°C) Fig. 12 – Power vs. Pulse Duration Fig. 13 – Maximum Safe Operating Area 100 70 10 60 ID -- Drain Current (A) BVDSS -- Breakdown Voltage (V) ID = 250µA 41 50 40 30 20 10 s ms 0m 1s RDS(ON) Limit 0µ s 10 10 s 1 10s 0.1 10 0 1m DC VGS = 10V Single Pulse on 1-in2 2oz Cu. TA = 25°C 0.01 0.01 0.1 1 10 100 0.1 1 10 VDS -- Drain-Source Voltage (V) 100