GF2524 Asymmetric N-Channel Enhancement-Mode MOSFET MOSFET 1: VDS 30V RDS(ON) 37mΩ ID 5.8A MOSFET 2: VDS 30V RDS(ON) 18mΩ ID 7.8A SO-8 t c u rod P New 0.197 (5.00) 0.189 (4.80) 5 8 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) S1 1 8 D1 7 D1 6 D2 5 D2 Q1 G1 2 S2 3 G2 Dimensions in inches and (millimeters) Q2 4 Mounting Pad Layout 4 1 0.020 (0.51) 0.013 (0.33) 0.050 (1.27) 0.05 (1.27) 0.04 (1.02) 0.019 (0.48) x 45 ° 0.010 (0.25) 0.009 (0.23) 0.007 (0.18) 0.069 (1.75) 0.053 (1.35) 0.050(1.27) 0.016 (0.41) 0 °– 8 ° 0.009 (0.23) 0.004 (0.10) 0.165 (4.19) 0.155 (3.94) 0.245 (6.22) Min. 0.035 (0.889) 0.025 (0.635) 0.050 typ. (1.27) Features Mechanical Data • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency • High temperature soldering in accordance with CECC802/Reflow guaranteed • High efficiency, optimized for PWM. Case: SO-8 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 Mounting Position: Any Weight: 0.5g Packaging Codes/Options: 5B/2.5K per reel, 12.5K per carton Maximum Ratings and Thermal Characteristics (T Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TJ = 150°C(1) Pulsed Drain Current (1) Continuous Source Current (Diode Conduction) TA = 25°C TA = 70°C Maximum Power Dissipation(1) Operating Junction and Storage Temperature Range (1) Maximum Junction-to-Ambient Thermal Resistance A = 25°C unless otherwise noted) MOSFET-1 MOSFET-2 VDS 30 30 VGS ± 20 ± 20 ID 5.8 7.8 IDM 20 30 IS 1.7 1.7 PD 2 1.3 2 1.3 TJ, Tstg RθJA –55 to 150 62.5 Unit V A W °C 62.5 °C/W 6/1/00 GF2524 Asymmetric N-Channel Enhancement-Mode MOSFET Electrical Characteristics (T Parameter J = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA Q1, Q2 30 — — V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA Q1, Q2 1.0 — 3.0 V Gate-Body Leakage IGSS VDS = 0V, VGS = ± 20V Q1, Q2 — — ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V Q1, Q2 — — 1 µA On-State Drain Current(2) ID(on) VDS ≥ 5V, VGS = 10V Q1 Q2 20 30 — — — — A RDS(on) VGS = 10V, ID = 5.8A VGS = 10V, ID = 7.8A VGS = 4.5V, ID = 4.7A VGS = 4.5V, ID = 6.3A Q1 Q2 Q1 Q2 — — — — 23.5 15.5 32.5 20.5 37 18 55 28 mΩ Forward Transconductance(2) gfs VDS = 15V, ID = 5.8A VDS = 15V, ID = 7.8A Q1 Q2 — — 16 27 — — S Diode Forward Voltage VSD IS = 1.7A, VGS = 0V Q1, Q2 — 0.75 1.2 S Total Gate Charge Qg Q1 Q2 — — 8.1 20 11 27 Gate-Source Charge Qgs Q1 VDS = 15V, VGS = 5V ID = 5.8A Q1 Q2 — — 2.1 5.8 — — Q1 Q2 — — 2.8 6.3 — — Q1 Q2 — — 7 10 14 20 Q1 Q2 — — 6 10 12 20 Q1 Q2 — — 25 51 40 77 tf Q1 Q2 — — 8 21 16 35 Input Capacitance Ciss Q1 Q2 — — 840 1885 — — Output Capacitance Coss Q1 Q2 — — 150 325 — — Reverse Transfer Capacitance Crss Q1 Q2 — — 80 180 — — Drain-Source On-State Resistance(2) Dynamic Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Q2 VDS = 15V, VGS = 5V ID = 10A VDD = 15V, RL = 15Ω, ID ≈ 1A, VGEN = 10V, RG = 6Ω tr Turn-Off Delay Time td(off) Fall Time VDS = 15V, VGS = 0V f = 1.0 MHz Notes: (1) Surface mounted on FR4 board, t ≤ 10 sec. (2) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% Switching Test Circuit ton VDD RL VIN VOUT D Switching Waveforms td(on) ns pF toff tr td(off) tf 90 % 90% Output, VOUT nC 10% 10% VGS INVERTED RGEN DUT 90% G 50% S Input, VIN 50% 10% PULSE WIDTH GF2524 MOSFET 1 Asymmetric N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics 30 VGS = 10V 25 7.0V 6.0V 5.0V 20 4.5V VDS = 10V 25 4.0V ID -- Drain Current (A) ID -- Drain-to-Source Current (A) 30 3.5V 15 10 3.0V 20 15 10 TJ = 125°C 25°C --55°C 5 5 2.5V 0 0 1 2 3 4 1 3 4 5 VGS -- Gate-to-Source Voltage (V) Fig. 3 – Threshold Voltage vs. Temperature Fig. 4 – On-Resistance vs. Drain Current 0.05 1.8 ID = 250µA 0.045 1.6 1.4 1.2 1 0.8 VGS = 4.5V 0.035 0.03 5V 0.025 10V 0.02 0.01 --25 0 25 50 75 100 125 0 150 5 10 15 20 25 TJ -- Junction Temperature (°C) ID -- Drain Current (A) Fig. 5 – On-Resistance vs. Junction Temperature Fig. 6 – On-Resistance vs. Gate-to-Source Voltage 1.6 30 0.12 RDS(ON) -- On-Resistance (Ω) VGS = 10V ID = 5.8A 1.4 1.2 1 0.8 ID = 5.8A 0.1 0.08 0.06 0.04 TJ = 125°C 0.02 25°C 0 0.6 --50 0.04 0.015 0.6 --50 RDS(ON) -- On-Resistance (Normalized) 2 VDS -- Drain-to-Source Voltage (V) RDS(ON) -- On-Resistance (Ω) VGS(th) -- Gate-to-Source Threshold Voltage (V) 0 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 125 150 2 4 6 8 VGS -- Gate-to-Source Voltage (V) 10 GF2524 MOSFET 1 Asymmetric N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 7 – Gate Charge Fig. 8 – Capacitance 1200 VDS = 15V ID = 5.8A f = 1MHZ VGS = 0V 1000 8 C -- Capacitance (pF) VGS -- Gate-to-Source Voltage (V) 10 6 4 2 Ciss 800 600 400 Coss 200 Crss 0 0 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 Qg -- Total Gate Charge (nC) VDS -- Drain-to-Source Voltage (V) Fig. 9 – Source-Drain Diode Forward Voltage Fig. 10 – Breakdown Voltage vs. Junction Temperature 30 41 100 VGS = 0V ID = 250µA BVDSS -- Drain-to-Source Breakdown Voltage (V) IS -- Source Current (A) 40 10 TJ = 125°C 1 25°C --55°C 0.1 39 38 37 36 0.01 0 0.2 0.4 0.6 0.8 1 VSD -- Source-to-Drain Voltage (V) 1.2 1.4 35 --50 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 125 150 GF2524 MOSFET 2 Asymmetric N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics 30 6.0V 5.0V 25 VGS = 10V VDS = 10V 3.5V 4.5V 4.0V 25 ID -- Drain Current (A) ID -- Drain-to-Source Current (A) 30 20 15 3.0V 10 20 15 TJ = 125°C 10 --55°C 25°C 5 5 2.5V 0 0 1 2 3 4 1 3 4 5 VGS -- Gate-to-Source Voltage (V) Fig. 3 – Threshold Voltage vs. Temperature Fig. 4 – On-Resistance vs. Drain Current 0.026 2 ID = 250µA 0.024 1.8 1.6 1.4 1.2 1 VGS = 4.5V 0.02 0.018 0.016 10V 0.014 0.01 --25 0 25 50 75 100 125 0 150 5 10 15 20 25 TJ -- Junction Temperature (°C) ID -- Drain Current (A) Fig. 5 – On-Resistance vs. Junction Temperature Fig. 6 – On-Resistance vs. Gate-to-Source Voltage 1.6 30 0.06 RDS(ON) -- On-Resistance (Ω) VGS = 10V ID = 7.8A 1.4 1.2 1 0.8 ID = 7.8A 0.05 0.04 0.03 TJ = 125°C 0.02 25°C 0.01 0 0.6 --50 0.022 0.012 0.8 --50 RDS(ON) -- On-Resistance (Normalized) 2 VDS -- Drain-to-Source Voltage (V) RDS(ON) -- On-Resistance (Ω) VGS(th) -- Gate-to-Source Threshold Voltage (V) 0 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 125 150 2 4 6 8 VGS -- Gate-to-Source Voltage (V) 10 GF2524 MOSFET 2 Asymmetric N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 7 – Gate Charge Fig. 8 – Capacitance 2500 VDS = 15V ID = 7.8A 6 4 f = 1MHZ VGS = 0V Ciss 2000 8 C -- Capacitance (pF) VGS -- Gate-to-Source Voltage (V) 10 1500 1000 2 500 0 0 Coss Crss 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 Qg -- Total Gate Charge (nC) VDS -- Drain-to-Source Voltage (V) Fig. 9 – Source-Drain Diode Forward Voltage Fig. 10 – Breakdown Voltage vs. Junction Temperature 30 44 100 VGS = 0V ID = 250µA BVDSS -- Drain-to-Source Breakdown Voltage (V) IS -- Source Current (A) 43 10 TJ = 125°C 1 25°C --55°C 0.1 42 41 40 39 38 0.01 0 0.2 0.4 0.6 0.8 1 VSD -- Source-to-Drain Voltage (V) 1.2 1.4 37 --50 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 125 150