GFD25N03 N-Channel Enhancement-Mode MOSFET t H c u C rod EN ET P R T ENF New VDS 30V RDS(ON) 16.5mΩ ID 38A D ® G TO-252 (DPAK) 0.265 (6.73) 0.255 (6.48) G 0.094 (2.39) 0.087 (2.21) S 0.214 (5.44) 0.206 (5.23) 0.023 (0.58) 0.018 (0.46) 0.190 (4.826) D 0.050 (1.27) 0.035 (0.89) 0.165 (4.191) 0.170 (4.32) min. 0.245 (6.22) 0.235 (5.97) G S 0.035 (0.89) 0.028 (0.71) 0.410 (10.41) 0.380 (9.65) 0.060 (1.52) 0.045 (1.14) 0.100 (2.54) 0.197 (5.00) 0.177 (4.49) 0.118 (3.0) 0.040 (1.02) 0.025 (0.64) 0.023 (0.58) 0.018 (0.46) 0.204 (5.18) 0.156 (3.96) 0.020 (0.51) min. 0.045 (1.14) 0.035 (0.89) 0.009 (0.23) 0.001 (0.03) 0.243 (6.172) Dimensions in inches and (millimeters) 0.063 (1.6) Mounting Pad Layout Mechanical Data Features Case: JEDEC TO-252 molded plastic body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Weight: 0.011oz., 0.4g • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency • Low Gate Charge Maximum Ratings and Thermal Characteristics (T Parameter C = 25°C unless otherwise noted) Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 ID 38 30 IDM 80 PD 38 24 2.5 TJ, Tstg –55 to 150 °C RθJC 3.3 °C/W RθJA 50 °C/W Continuous Drain Current TJ = 150°C TC = 25°C TC = 70°C (1) Pulsed Drain Current Power Dissipation TJ = 150°C TC = 25°C TC = 70°C TA = 25°C(2) Operating Junction and Storage Temperature Range Junction-to-Case Thermal Resistance (2) Junction-to-Ambient Thermal Resistance Notes: (1) Pulse width limited by maximum junction temperature (2) Surface mounted on a 1in2 2 oz.. Cu PCB (FR-4 material) Unit V A W 9/17/01 GFD25N03 N-Channel Enhancement-Mode MOSFET Electrical Characteristics (T J Parameter = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 – – V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 0.8 – 2.5 V Gate-Body Leakage IGSS VGS = ± 20V, VDS = 0V – – ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V – – 1 VDS = 24V, VGS = 0V, TJ = 125°C – – 10 On-State Drain Current(1) ID(on) VDS ≥ 5V, VGS = 10V 80 – – VGS = 10V, ID = 19A – 12.5 16.5 VGS = 4.5V, ID = 15A – 19 25 VDS = 5V, ID = 19A – 25 – VDS = 15V, VGS = 5V,ID = 19A – 11 14 – 22 28 – 3.4 – – 3.4 – – 10 18 – 14 25 – 38 60 – 6 10 – 1173 – – 199 – – 112 – Static Drain-Source On-State Resistance(1) RDS(on) Forward Transconductance(1) gfs µA A mΩ S Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 15V, ID = 19A VGS = 10V VDD = 15V, ID = 1A VGEN = 10V, RG = 6Ω VDS = 15V, VGS = 0V f = 1.0MHZ nC ns pF Source-Drain Diode Diode Forward Voltage(1) Continuous Source Current (Diode Conduction) VSD IS = 19A, VGS = 0V – 0.9 1.2 V IS – – – 30 A Notes: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% VDD ton Switching Test Circuit RD VIN VOUT D Switching Waveforms td(on) RG tr td(off) tf 90 % 90% Output, VOUT VGEN toff 10% 10% INVERTED DUT G 90% 50% S Input, VIN 50% 10% PULSE WIDTH GFD25N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics 40 40 VDS = 10V 30 3.5V ID -- Drain Current (A) ID -- Drain Source Current (A) VGS = 4.0V, 4.5V, 5.0V, 6V, 10V 20 3.0V 10 30 20 TJ = 125°C --55°C 10 VGS = 2.5V 25°C 0 0 0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) Fig. 3 – Threshold Voltage vs. Temperature Fig. 4 – On-Resistance vs. Drain Current 4 4.5 0.025 1.4 RDS(ON) -- On-Resistance (Ω) VGS(th) -- Threshold Voltage (V) ID = 250µA 1.2 1 0.8 0.6 0.4 --50 0 25 50 75 100 125 150 1.8 RDS(ON) -- On-Resistance (Normalized) 0.015 VGS = 10V 0.01 VGS = 10V ID = 19A 1.4 1.2 1 0.8 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 0 10 20 ID -- Drain Current (A) Fig. 5 – On-Resistance vs. Junction Temperature 0.6 --50 VGS = 4.5V 0.005 --25 TJ -- Junction Temperature (°C) 1.6 0.02 125 150 30 40 GFD25N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 6 – On-Resistance vs. Gate-to-Source Voltage Fig. 7 – Gate Charge 0.07 10 VDS = 15V ID = 19A VGS -- Gate-to-Source Voltage (V) RDS(ON) -- On-Resistance (Ω) ID = 19A 0.06 0.05 0.04 0.03 TJ = 125°C 0.02 25°C 0.01 0 8 6 4 2 0 2 4 6 8 10 0 4 8 VGS -- Gate-to-Source Voltage (V) 16 20 24 Fig. 9 – Source-Drain Diode Forward Voltage Fig. 8 – Capacitance 100 1500 VGS = 0V f = 1MHZ VGS = 0V Ciss IS -- Source Current (A) 1200 C -- Capacitance (pF) 12 Qg -- Gate Charge (nC) 900 600 300 10 TJ = 125°C 1 25°C 0.1 --55°C Coss Crss 0 0.01 0 5 10 15 20 VDS -- Drain-to-Source Voltage (V) 25 30 0 0.2 0.4 0.6 0.8 1 VSD -- Source-to-Drain Voltage (V) 1.2 1.4