SUD35N05-26L New Product Vishay Siliconix N-Channel 55-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 55 ID D TrenchFETr Power MOSFETS D 175_C Rated Maximum Junction Temperature D Low Input Capacitance (A)a 0.020 @ VGS = 10 V 35 APPLICATIONS 0.026 @ VGS = 4.5 V 30 D Automotive Fuel Injection Systems D Automotive Wipers D Automotive Door Modules D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD35N05-26L S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 55 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C) _ b TC = 25_C TC = 100_C Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 25_C Operating Junction and Storage Temperature Range V 35 ID 25 IDM 80 IS 35 A 50c TC = 25_C Maximum Power Dissipation Unit PD W 7.5b TJ, Tstg _C –55 to 175 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec Junction-to-Ambientb Steady State RthJA Typical Maximum 17 20 50 60 Junction-to-Case RthJC 2.5 3.0 Junction-to-Lead RthJL 5.0 6.0 Unit _ _C/W Notes a. Package Limited. b. Surface Mounted on 1” x1” FR4 Board, t v 10 sec. c. See SOA curve for voltage derating. Document Number: 71443 S-03485—Rev. A,16-Apr-01 www.vishay.com 1 SUD35N05-26L New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 55 VGS(th) VDS = VGS, ID = 250 mA 1 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 44 V, VGS = 0 V 1 VDS = 44 V, VGS = 0 V, TJ = 125_C 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) VDS = 5 V, VGS = 5 V VGS = 10 V, ID = 20 A Drain-Source On-State Resistanceb Forward Transconductanceb rDS(on) gfs V 35 nA m mA A 0.0165 VGS = 10 V, ID = 20 A, TJ = 125_C 0.020 0.035 VGS = 4.5 V, ID = 15 A 0.0215 VDS = 15 V, ID = 20 A 25 W 0.026 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 885 VGS = 0 V, VDS = 25 V, F = 1 MHz 185 pF 80 Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) 5 8 tr 18 30 20 30 100 150 Rise Timec Turn-Off Delay Timec Fall Timec td(off) 10.5 VDS = 25 V, VGS = 5 V, ID = 35 A 13 4 nC 4.8 VDD = 25 V, RL = 0.3 W ID ^ 35 A, VGEN = 10 V, RG = 2.5 W tf ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Continuous Current IS 35 Pulsed Current ISM 80 Diode Forward Voltageb VSD IF = 80 A, VGS = 0 V trr IF = 35 A, di/dt = 100 A/ms A Source-Drain Reverse Recovery Time 25 1.5 V 40 ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71443 S-03485—Rev. A,16-Apr-01 SUD35N05-26L New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 100 100 VGS = 10 thru 6 V TC = –55_C 80 5V 25_C I D – Drain Current (A) I D – Drain Current (A) 80 60 4V 40 20 2V 125_C 60 40 20 3V 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 1 2 3 4 5 6 7 8 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 60 0.04 TC = –55_C r DS(on)– On-Resistance ( W ) g fs – Transconductance (S) 50 25_C 40 125_C 30 20 10 0 0.03 VGS = 4.5 V VGS = 10 V 0.02 0.01 0.00 0 20 40 60 80 0 100 20 40 ID – Drain Current (A) 80 100 ID – Drain Current (A) Capacitance Gate Charge 20 V GS – Gate-to-Source Voltage (V) 1500 1200 C – Capacitance (pF) 60 Ciss 900 600 300 Coss Crss 0 0 VDS = 25 V ID = 35 A 16 12 8 4 0 11 22 33 44 VDS – Drain-to-Source Voltage (V) Document Number: 71443 S-03485—Rev. A,16-Apr-01 55 0 10 20 30 40 Qg – Total Gate Charge (nC) www.vishay.com 3 SUD35N05-26L New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.0 100 1.6 I S – Source Current (A) r DS(on)– On-Resistance ( W ) (Normalized) VGS = 10 V ID = 20 A 1.2 0.8 TJ = 175_C 10 TJ = 25_C 0.4 0.0 –50 1 –25 0 25 50 75 100 125 150 175 0 TJ – Junction Temperature (_C) 0.2 0.4 0.6 0.8 1.0 1.2 VSD – Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature Safe Operating Area 500 40 Limited by rDS(on) 100 10 ms I D – Drain Current (A) I D – Drain Current (A) 30 20 10 100 ms 10 10 ms 100 ms 1s dc 1 TC = 25_C Single Pulse 0 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TC – Case Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71443 S-03485—Rev. A,16-Apr-01