VISHAY SUB75N06-07L

SUP/SUB75N06-07L
Vishay Siliconix
N-Channel 60-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
ID (A)
0.0075 @ VGS = 10 V
75a
60
0.0085 @ VGS = 4.5 V
D
TO-220AB
TO-263
G
DRAIN connected to TAB
G
D S
Top View
G D S
S
SUB75N06-07L
Top View
N-Channel MOSFET
SUP75N06-07L
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Gate-Source Voltage
Symbol
Limit
Unit
VGS
"20
V
75a
TC = 25_C
Continuous Drain Current
(TJ = 175_C)
TC = 125_C
Pulsed Drain Current
ID
IDM
Avalanche Current
Repetitive Avalanche Energyb
L = 0.1 mH
IAR
60
EAR
280
TA = 25_C (TO-263)d
Operating Junction and Storage Temperature Range
A
mJ
250c
TC = 25_C (TO-220AB and TO-263)
Power Dissipation
55
240
PD
3.7
W
TJ, Tstg
–55 to 175
_C
Symbol
Limit
Unit
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)d
Junction-to-Ambient
Junction-to-Case
Free Air (TO-220AB)
40
RthJA
RthJC
62.5
_C/W
0.6
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 70776
S-05111—Rev. F, 10-Dec-00
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2-1
SUP/SUB75N06-07L
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
VGS(th)
VDS = VGS, ID = 250 mA
1.0
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 60 V, VGS = 0 V
1
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward
Transconductancea
IDSS
ID(on)
rDS(on)
gfs
V
3.0
VDS = 60 V, VGS = 0 V, TJ = 125_C
50
VDS = 60 V, VGS = 0 V, TJ = 175_C
250
VDS = 5 V, VGS = 10 V
120
mA
m
A
VGS = 10 V, ID = 30 A
0.0061
0.0075
VGS = 4.5 V, ID = 20A
0.0071
0.0085
VGS = 10 V, ID = 30 A, TJ = 125_C
0.012
VGS = 10 V, ID = 30 A, TJ = 175_C
0.015
VDS = 15 V, ID = 30 A
nA
30
W
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
6300
VGS = 0 V, VDS = 25 V, f = 1 MHz
920
pF
350
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
27
Turn-On Delay Timec
td(on)
14
tr
15
40
150
300
50
100
Rise Timec
Turn-Off Delay Timec
Fall Timec
td(off)
75
VDS = 30 V, VGS = 10 V, ID = 75 A
VDD = 30 V, RL = 0.47 W
ID ^ 75 A, VGEN = 10 V, RG = 2.5 W
tf
120
18
nC
40
ns
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
IS
75
Pulsed Current
ISM
240
Forward Voltagea
VSD
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
A
IF = 75 A , VGS = 0 V
trr
IRM(REC)
Qrr
IF = 75 A, di/dt = 100 A/ms
m
1.0
1.3
V
67
120
ns
6
8
A
0.2
0.48
mC
Notes
a. Pulse test: pulse width v 300 msec, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
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2-2
Document Number: 70776
S-05111—Rev. F, 10-Dec-00
SUP/SUB75N06-07L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
250
200
VGS = 10 thru 5 V
200
I D – Drain Current (A)
I D – Drain Current (A)
150
4V
150
100
3V
50
100
TC = 125_C
50
25_C
–55_C
0
0
0
2
4
6
8
10
0
VDS – Drain-to-Source Voltage (V)
2
4
5
On-Resistance vs. Drain Current
0.010
–55_C
150
VGS = 4.5 V
0.008
r DS(on) – On-Resistance ( Ω )
25_C
120
125_C
90
60
30
0
0.006
VGS = 10 V
0.004
0.002
0.000
0
20
40
60
80
100
0
20
40
VGS – Gate-to-Source Voltage (V)
60
80
100
100
125
ID – Drain Current (A)
Capacitance
Gate Charge
20
V GS – Gate-to-Source Voltage (V)
10000
8000
C – Capacitance (pF)
3
VGS – Gate-to-Source Voltage (V)
Transconductance
180
g fs – Transconductance (S)
1
Ciss
6000
4000
2000
Coss
Crss
0
VDS = 30 V
ID = 75 A
16
12
8
4
0
0
10
20
30
40
50
VDS – Drain-to-Source Voltage (V)
Document Number: 70776
S-05111—Rev. F, 10-Dec-00
60
0
25
50
75
Qg – Total Gate Charge (nC)
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SUP/SUB75N06-07L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.2
100
VGS = 10 V
ID = 30 A
TJ = 150_C
I S – Source Current (A)
r DS(on) – On-Resistance ( Ω )
(Normalized)
1.9
1.6
1.3
1.0
TJ = 25_C
10
0.7
0.4
–50
1
–25
0
25
50
75
100
125
150
175
0.3
0
TJ – Junction Temperature (_C)
0.6
0.9
1.2
1.5
VSD – Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
500
100
I D – Drain Current (A)
I D – Drain Current (A)
100
60
40
10 ms
Limited
by rDS(on)
80
100 ms
1 ms
10
TC = 25_C
Single Pulse
20
0
10 ms
100 ms
dc
1
0
25
50
75
100
125
150
175
TC – Case Temperature (_C)
0.1
1
10
VDS – Drain-to-Source Voltage (V)
100
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–5
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2-4
10–4
10–3
10–2
Square Wave Pulse Duration (sec)
10–1
1
3
Document Number: 70776
S-05111—Rev. F, 10-Dec-00