MegaMOSTMFET Module VMO 450-02F VDSS = 200 V ID25 = 450 A RDS(on) typ = 3.8 mW D N-Channel Enhancement Mode G S KS D KS S Symbol Conditions VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 10 kΩ 200 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 450 A ID80 TC = 80°C 340 A IDM TC = 25°C, tP = 10 µs 1800 A PD TC = 25°C 2000 W Features Maximum Ratings -40 ...+150 °C l TJM 150 °C Tstg -40 ... +125 °C 3000 3600 V~ V~ ¬ TJ VISOL 50/60 Hz IISOL ≤ 1 mA Md Mounting torque (M6) Terminal connection torque (M5) t = 1 min t=1s Weight typical including screws E 72873 D = Drain Source KS = Kelvin Source Gate l l l l 2.25-2.75/20-25 Nm/lb.in. 2.5-3.7/22-33 Nm/lb.in. 250 l l Symbol Conditions VDSS VGS = 0 V, ID = 12 mA Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS(th) VDS = 20 V, ID = 40 mA IGSS VGS = ±20 V DC, VDS = 0 IDSS VDS = 0.8 VDSS, RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % VGS = 0 V 2 l 4 V l ±500 nA 2.2 mA 11 mA 3.8 AC motor speed control for electric vehicles DC servo and robot drives Switched-mode and resonant-mode power supplies DC choppers Advantages l l TJ = 25°C TJ = 125°C G= International standard package Direct Copper Bonded Al2O3 ceramic base plate Low RDS(on) HDMOSTM process Low package inductance for high speed switching Kelvin Source contact for easy drive V 200 S= Applications g l l Easy to mount Space and weight savings High power density Low losses 4.6 mΩ Additional current limitation by external leads IXYS reserves the right to change limits, test conditions and dimensions. © 1999 IXYS All rights reserved 918 ¬ G C3 - 14 C3 VMO 450-02F Symbol gfs Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDS = 10 V; ID = 0.5 ID25 pulsed 400 S 52 nF 10 nF Crss 3.5 nF td(on) 210 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 500 ns td(off) RG = 1 Ω 900 ns 350 ns 2300 nC 420 nC 1100 nC tf Qg VGS = 10 V, VDS = 100 V, ID = 200 A Qgs Qgd RthJC RthJK 5 C3 0.063 K/W with 30 µm heat transfer paste Source-Drain Diode 0.093 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Conditions IS VGS = 0, TC = 25°C, TJ = TJM ISM Repetitive; pulse width limited by TJM VSD IF = 450 A; VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % trr IF = IS, -di/dt = 1200 A/µs, VDS = 100 V Dimensions in mm (1 mm = 0.0394") 1 600 450 A 1800 A 1.25 V ns Additional current limitation by external leads IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: © 1999 IXYS All rights reserved 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 C3 - 15 VMO 450-02F 1200 ID 1200 ID A 1000 800 A VDS = 30 V 1000 VGS = 10 V 9V 8V 800 7V 600 600 6V 400 400 200 200 5V TJ = 125°C 0 TJ = 25°C 0 0 1 2 3 4 5 VDS V 6 0 Fig. 1 Typical output characteristics ID = f (VDS) 2 4 VGS 6 V 8 C3 Fig. 2 Typical transfer characteristics ID = f (VGS) 2.5 1.4 RDS(on) 1.3 norm. RDS(on) norm. 2.0 1.2 ID = 225 A VGS = 10 V 1.1 1.5 VGS = 15 V 1.0 1.0 0.9 0.8 0 200 400 600 800 1000 A ID Fig. 3 Typical RDS(on) = f (ID), normalized 1200 500 0.5 -50 400 25 50 75 100 TJ 125 °C150 VGS(th) norm. 350 0 Fig. 4 RDS(on) = f (TJ), normalized 1.2 VDSS VGS(th)1.1 ID 450 A -25 VDSS 1.0 300 250 0.9 200 0.8 150 100 0.7 50 0 0 25 50 125 °C 150 TC Fig. 5 Continuous drain current ID = f (TC) © 1999 IXYS All rights reserved 75 100 0.6 -50 VMO450-02F -25 0 25 50 75 100 125 °C150 TJ Fig. 6 VDSS = f (TJ), VGS(th) = f (TJ), normalized C3 - 16 VMO 450-02F 15 VGS 10000 VDS = 100 V ID = 190 A IG = 11 mA V 12 ID A t = 10 µs 1000 Limited by RDS(on) t = 1 ms 9 t = 10 ms 100 6 t = 100 ms 10 3 0 TC = 25°C TJ = 150°C non-repetitive 1 0 500 1000 1500 2000 2500 nC 3000 Qg Fig. 7 Typical turn-on gate charge characteristics 1 V 1000 VDS Fig. 8 Forward Bias Safe Operating Area, ID = f (VDS) 1000 10 100 1200 A nF IS C 100 1000 800 Ciss 600 TJ = 125°C Coss 10 TJ = 25°C 400 Crss 200 1 0 5 10 15 20 0 0.00 0 25 V 1.25 V 1.50 VSD Fig. 10 Typical forward characteristics of reverse diode, IS = f (VSD) VDS Fig. 9 Typical capacitances C = f (VDS), f = 1 MHz A 0.75 1.00 TC = 80°C K/W D= 0.1 ZthJC 800 0.50 0.1 1200 Id 0.25 0.01 D= 0.2 D = 0.5 D= 0.2 D= 0.1 D=0.05 D= 0.3 D= 0.4 D= 0.5 400 D= 0.7 D=0.02 0.001 D=0.01 D= single pulse 0 0.0001 0.001 0.01 s 1 0.1 tp Fig. 11 Drain current versus pulse width and duty cycle © 1999 IXYS All rights reserved 0.0001 0.001 VMO450-02F 0.01 0.1 1 s 10 tp Fig. 12 Transient thermal resistance ZthJK = f (tp) C3 - 17 C3