FUJI 7MBR20UF060

DATE
CHECKED
NAME
CHECKED Aug.-06-'04 O. Ikawa
K. Yamada
APPROVED
D R A W N Aug.-06-'04 K. Komatsu
Y. Seki
DWG.NO.
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
SPECIFICATION
Device Name
:
Power Integrated Module
Type Name
:
7MBR20UF060
Spec. No.
:
MS6M00819
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t
Fuji Electric Device Technology Co.,Ltd.
a
MS6M00819
1/ 16
H04-004-07b
Revised Records
Date
Classification
Ind.
Applied
date
Content
Issued
date
Aug.-06-' 04 Enactment
a
Revision
Checked
Checked Approved
O. Ikawa K. Yamada
Y. Seki
K. Komatsu O. Ikawa K. Yamada Y. Seki
種
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定
予 new
or
f
止
d
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m
m
守
o
保 rec
t
No
Fuji Electric Device Technology Co.,Ltd.
DWG.NO.
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
Dec.-16-'04
Revised outline drawing
(P3/16)
Added the note (P4/16)
Revised VCE(sat),VF (P6/16)
Revised warning (P14/16)
Drawn
a
MS6M00819
2/ 16
H04-004-03a
H04-004-06b
2. Equivalent circuit
Fuji Electric Device Technology Co.,Ltd.
DWG.NO.
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
7MBR20UF060 Specification
1. Outline Drawing ( Unit : mm )
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Module only designed for mounting on PCB with 1.7±0.3mm thickness
m
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MS6M00819
a
No
t
a
3/ 16
H04-004-03a
4. Drilling layout for PCB
Fuji Electric Device Technology Co.,Ltd.
DWG.NO.
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
3. Pin positions with torerance ( Unit : mm )
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m
守
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保 rec
or
f
止
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定
予 new
No
t
Please refer to mounting instructions (Technical Rep. No. : MT5F14628a) when you mount this product.
a
a
MS6M00819
4/ 16
H04-004-03a
5. Absolute Maximum Ratings ( at Tc= 25oC unless otherwise specified)
Items
Symbols
Collector-Emitter voltage
VCES
Gate-Emitter voltage
VGES
Inverter
Ic
Collector current
Collector Power Dissipation
1ms
-Ic
Continuous
Pc
1 device
V
V
Tc=65oC
20
Tc=25oC
25
Tc=65oC
40
Tc=25oC
50
Tc=65oC
20
A
78
W
A
A
VCES
600
V
Gate-Emitter voltage
VGES
±20
V
Brake
Ic
Continuous
Icp
1ms
o
15
o
Tc=25 C
19
Tc=65oC
30
Tc=65 C
o
Tc=25 C
Converter
Units
Collector-Emitter voltage
Collector current
Collector Power Dissipation
Pc
Average Output Current
Io
Surge Current (Non-Repetitive)
2
It
(Non-Repetitive)
between terminal and baseplate(*1)
voltage
between thermistor and others
(*2)
W
20
A
210
A
half sine wave
221
A2s
種
.
n
g
機 si
Tstg
Isolation
76
2
Tj
Storage temperature
A
28
Tj=150oC,10ms
It
Junction temperature
1 device
50Hz/60Hz
sine wave
A
IFSM
Viso
定
予 ne
AC : 1min.
e
d
w
Mounting Screw Torque
M4
(*1) All terminals should be connected together when isolation test will be done.
or
f
止
d
n
e
廃
150
o
-40~ +125
o
C
2500
C
V
2500
V
1.3～1.7
N.m
(*2) Terminal T1 and T2 should be connected together. And another terminals
should be connected together and shorted to baseplate.
m
m
守
o
保 rec
t
No
Fuji Electric Device Technology Co.,Ltd.
DWG.NO.
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
±20
Continuous
Icp
Maximum
Ratings
600
Conditions
a
MS6M00819
5/ 16
H04-004-03a
6. Electrical characteristics ( at Tj= 25oC unless otherwise specified)
Items
Zero gate voltage
Collector current
Gate-Emitter leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
Inverter
saturation voltage
Symbols
Characteristics
min.
typ.
Max.
Conditions
ICES
VGE =
0 V, V CE = 600 V
-
-
1.0
mA
IGES
VCE =
0 V, V GE = ±20 V
-
-
200
nA
VGE(th)
VCE =
4.5
6.0
7.5
V
1.95
2.45
20 V, Ic =
Ic =
（Chip）
Input capacitance
Cies
VGE =
f=
Turn-on time
ton
Vcc=
15 mA
Tj=25℃
VCE(sat)
（ Terminal） VGE =
VCE(sat)
-
15 V, Tj=125℃
-
20 A Tj=25℃
Tj=125℃
-
2.25 a 2.75 a
-
1500
-
300 V
-
0.35
1.2
0.6
0 V, V CE =
1 MHz
10 V
Ic =
20 A
-
0.12
VGE =
±15 V
-
0.08
-
Turn-off time
toff
RG =
150 
-
0.40
1.0
Forward on voltage
VF
VF
IF =
20 A
(Chip)
saturation voltage
trr
IF =
0.35
1.70
2.10
Tj=25℃
-
Tj=125℃
-
t
No
1.65 a 2.05 a
-
種
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g
機 si
300
ns
IGES
VCE =
0 V, V GE = ±20 V
-
-
200
nA
VGE(th)
VCE =
4.5
6.0
7.5
V
2.10
2.60 a
20 V, Ic =
Ic =
Tj=25℃
-
15 V, Tj=125℃
-
15 A Tj=25℃
-
Tj=125℃
Cies
VGE =
f=
ton
Vcc=
tr
8 mA
e
d
定
予 new
VCE(sat)
（ Terminal） VGE =
0 V, V CE =
1 MHz
Ic =
10 V
-
2.50 a 3.00 a
2.00
2.50 a
V
2.40 a 2.90 a
-
900
-
300 V
-
0.43
1.2
pF
s
15 A
-
0.18
0.6
toff
VGE =
±15 V
-
0.40
1.0
tf
RG =
-
0.05
0.35
-
-
350
ns
-
-
1.00
mA
-
1.1
-
V
-
1.2
1.5
-
-
1.0
mA
T = 25 C
4750
5000
5250
W
T =100oC
-
495
-
3305
3375
3450
trr
IF =
VR =
600 V
Forward on voltage
VFM
IF =
20 A chip
terminal
B value
V
mA
IRRM
Resistance
2.00
1.0
Reverse current
Reverse current
1.60
-
270 
15 A
Reverse recovery time
1.75 a 2.15 a
-
m
m
守
o
保 rec
Turn-on time
s
0 V, V CE = 600 V
or
f
止
d
n
e
廃
Input capacitance
-
20 A
IRRM
R
B
VR =
800 V
o
T = 25/50oC
Fuji Electric Device Technology Co.,Ltd.
DWG.NO.
Brake
0.05
-
pF
VGE =
（Chip）
Turn-off time
Tj=25℃
Tj=125℃
V
ICES
VCE(sat)
Converter
2.35
tr
(Terminal)
Thermistor
1.85
-
tf
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
2.35 a 2.85 a
tr(i)
Reverse recovery time
Zero gate voltage
Collector current
Gate-Emitter leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
Units
K
a
MS6M00819
6/ 16
H04-004-03a
7. Thermal resistance characteristics
Items
Symbols
Thermal resistance
(1 device)
Rth(j-c)
Contact Thermal resistance
Rth(c-f)
Characteristics
min.
typ.
Max.
Conditions
Inverter IGBT
-
-
1.65
Inverter FWD
-
-
1.76
Brake IGBT
-
-
1.99
Brake diode
-
-
2.04
Converter Diode
-
-
1.56
with Thermal Compound (*)
-
0.50
-
Units
o
C/W
o
C/W
* This is the value which is defined mounting on the additional cooling fin with thermal compound.
8. Indication on module
Serial No.
□
□
□
7MBR20UF060
20A 600V
U. K.
□□□□□
9. Applicable category
This specification is applied to Power Integrated Module named 7MBR20UF060.
10. Storage and transportation notes
・ The module should be stored at a standard temperature of 5 to 35oC and
humidity of 45 to 75% .
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・ Store modules in a place with few temperature changes in order to avoid
condensation on the module surface.
・ Avoid exposure to corrosive gases and dust.
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・ Avoid excessive external force on the module.
・ Store modules with unprocessed terminals.
m
m
守
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保 rec
・ Do not drop or otherwise shock the modules when transporting.
t
No
～
～
11. Definitions of switching time
0V
V GE
L
trr
Irr
～
～
VCE
Ic
90%
10%
10%
～
～
0V
0A
V CE
Ic
90%
Vcc
RG
90%
0V
10%
VCE
tr(i)
V GE
tr
Ic
tf
toff
ton
12. Packing and Labeling
Display on the packing box
‐ Logo of production
‐ Type name
‐ Lot. No.
‐ Products quantitiy in a packing box
Fuji Electric Device Technology Co.,Ltd.
DWG.NO.
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
Lot. No.
a
MS6M00819
7/ 16
H04-004-03a
Reliability Test Items
Test
categories
Test items
(Aug.-2001 edition)
Mechanical Tests
1 Terminal Strength
(Pull test)
2 Mounting Strength
3 Vibration
Environment Tests
4 Shock
1 High Temperature
Storage
2 Low Temperature
Storage
3 Temperature
Humidity
Storage
4 Temperature
Cycle
Pull force
Test time
Screw torque
Test time
:
:
:
:
10N
10±1 sec.
1.3 ~ 1.7 N･m (M4)
10±1 sec.
Number of cycles
:
(0:1)
5
(0:1)
5
(0:1)
Test Method 201
5
(0:1)
Test Method 202
5
(0:1)
Test Method 103
5
(0:1)
5
(0:1)
5
(0:1)
methodⅡ
Test Method 403
Reference 1
Condition code B
Test Method 404
Condition code D
Test code C
Low temp. -40±5 ℃
RT 5 ~ 35 ℃
: High ~ RT ~ Low ~ RT
1hr. 0.5hr. 1hr. 0.5hr.
: 100 cycles
:
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Test temp.
High temp. 100
+0
-5
+5
-0
Test Method 307
℃
method Ⅰ
Condition code A
Low temp. 0 ℃
Used liquid : Water with ice and boiling water
Dipping time
: 5 min. par each temp.
Transfer time
: 10 sec.
Number of cycles
: 10 cycles
m
m
守
o
保 rec
t
5
Test Method 402
Test Method 105
Test temp.
Dwell time
No
(0:1)
MethodⅠ
High temp. 125 ±5 ℃
5 Thermal Shock
5
Test Method 401
Range of frequency : 0.1 ~ 500Hz
Sweeping time
: 15 min.
Acceleration
: 100m/s 2
Sweeping direction : Each X,Y,Z axis
Test time
: 3 hr. (1hr./direction)
Maximum acceleration : 9800m/s 2
Pulse width
: 0.5msec.
Direction
: Each X,Y,Z axis
Test time
: 3 times/direction
Storage temp.
: 125±5 ℃
Test duration
: 1000hr.
Storage temp.
: -40±5 ℃
Test duration
: 1000hr.
Storage temp.
: 85±2 ℃
Relative humidity
: 85±5%
Test duration
: 1000hr.
Fuji Electric Device Technology Co.,Ltd.
DWG.NO.
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
Reference
AcceptNumber
norms
ance
EIAJ ED-4701 of sample
number
Test methods and conditions
a
MS6M00819
8/ 16
H04-004-03a
Reliability Test Items
Test
categories
Test items
1 High temperature
Reverse Bias
Endurance Tests
Test duration
2 High temperature
Bias (for gate)
: Ta = 125±5 ℃
(Tj ≦
150 ℃)
: VC = VGE = +20V or -20V
: Applied DC voltage to G-E
VCE = 0V
: 1000hr.
: 2 sec.
: 18 sec.
: 
Tj=100±5 deg
Tj ≦
150 ℃, Ta=25±5 ℃
: 8500 cycles
Test temp.
Bias Voltage
Bias Method
Test duration
ON time
OFF time
Test temp.
3 Intermitted
Operating Life
(Power cycle)
( for IGBT )
Number of cycles
Electrical
Leakage current
characteristic
Symbol
ICES
±IGES
Gate threshold voltage VGE(th)
Saturation voltage
VCE(sat)
Forward voltage
VF
Thermal
IGBT
VGE

resistance
or 
VCE
FWD
VF

Isolation voltage
Viso
Visual inspection
Peeling
Plating
and the others
t
Visual
inspection
Test Method 101
5
(0:1)
Test Method 106
5
P<1%
for
Failure criteria
Unit
Lower limit Upper limit
m
m
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保 rec
No
(0:1)
e
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定
予 new
止
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Characteristic
5
種
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Failure Criteria
Item
Test Method 101
: Ta = 125±5 ℃
(Tj ≦
150 ℃)
: VC = 0.8×VCES
: Applied DC voltage to C-E
VGE = 0V
: 1000hr.
Test temp.
Bias Voltage
Bias Method
-
USL×2
USL×2
mA
A
LSL×0.8
-
USL×1.2
USL×1.2
USL×1.2
USL×1.2
mA
V
V
mV
-
USL×1.2
mV
Broken insulation
-
The visual sample
-
Note
LSL : Lower specified limit.
USL : Upper specified limit.
Note : Each parameter measurement read-outs shall be made after stabilizing the components
at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.
And in case of the wetting tests, for example, moisture resistance tests, each component
shall be made wipe or dry completely before the measurement.
Fuji Electric Device Technology Co.,Ltd.
DWG.NO.
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
Reference
AcceptNumber
norms
ance
EIAJ ED-4701 of sample
number
(Aug.-2001 edition)
Test methods and conditions
a
MS6M00819
9/ 16
H04-004-03a
Reliability Test Results
Test
categories
Reference
norms
EIAJ ED-4701
Test items
(Aug.-2001 edition)
Test Method 401
Mechanical Tests
1 Terminal Strength
5
0
5
0
5
0
5
0
MethodⅠ
(Pull test)
Test Method 402
2 Mounting Strength
methodⅡ
3 Vibration
Test Method 403
Condition code B
Test Method 404
4 Shock
Environment Tests
Condition code B
1 High Temperature Storage
Test Method 201
5
0
2 Low Temperature Storage
Test Method 202
5
0
3 Temperature Humidity
Test Method 103
種
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5
0
Test Method 105
5
0
Test Method 307
5
0
Test Method 101
5
0
Test Method 101
5
0
Test Method 106
5
0
Test code C
Storage
4 Temperature Cycle
5 Thermal Shock
e
d
定
予 new
or
f
止
d
n
e
廃
method Ⅰ
Condition code A
守
o
c
e
保r
mm
1 High temperature Reverse Bias
t gate )
( for
N3 oIntermitted Operating Life
2 High temperature Bias
(Power cycling)
( for IGBT )
Fuji Electric Device Technology Co.,Ltd.
DWG.NO.
Endurance Tests
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
Number Number
of test of failure
sample sample
a
MS6M00819
10 / 16
H04-004-03a
[ Inverter ]
Collector current vs. Collector-Emitter voltage
[ Inverter ]
Collector current vs. Collector-Emitter voltage
o
Tj= 125oC (typ.) / chip
Tj= 25 C (typ.) / chip
50
50
40
11V
Collector current : Ic [ A ]
Collector current : Ic [ A ]
VGE=20V 15V 13V
VGE=20V 15V 13V 11V
40
30
20
9V
30
20
9V
10
10
0
0
0
1
2
3
4
5
0
1
3
4
5
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.) / chip
Tj= 25oC (typ.) / chip
50
Tj=25 oC
Tj=125 oC
Collector current : Ic [ A ]
40
30
Collector - Emitter voltage : VCE [ V ]
10
8
種
.
n
g
機 si
6
e
d
定
予 new
20
10
0
止
d
n
e
廃
守
o
c
e
保r
0
1
2
3
4
mm
5
4
for
ot
Ic=40A
2
10
Collector - Emitter voltage : VCE [ V ]
20A
10A
15
20
Gate - Emitter voltage : VGE [ V ]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
[ Inverter ]
Dynamic Gate charge (typ.)
VGE=0V, f= 1MHz, Tj= 25 oC
Vcc=300V, Ic=15A, Tj= 25 oC
N
500
25
400
20
300
15
200
10
100
5
Cies
Collector - Emitter voltage : VCE [ V ]
1000
Coes
100
Gate - Emitter voltage : VGE [ V ]
Capacitance : Cies, Coes, Cres [ pF ]
Cres
0
0
5
10
15
20
25
30
0
35
Fuji Electric Device Technology Co.,Ltd.
20
40
60
80
0
120
100
Gate charge : Qg [ nC ]
Collector - Emitter voltage : VCE [ V ]
DWG.NO.
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
Collector - Emitter voltage : VCE [ V ]
2
a
MS6M00819
11 / 16
H04-004-03a
[ Inverter ]
Switching time vs. Collector current (typ.)
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=+-15V, Rg=150 , Tj= 125oC
o
Vcc=300V, VGE=+-15V, Rg=150, Tj= 25 C
1000
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
1000
toff
ton
tr
100
tf
toff
ton
tr
100
tf
10
10
10
20
30
40
10
20
40
Collector current : Ic [ A ]
[ Inverter ]
Switching time vs. Gate resistance (typ.)
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=300V, VGE=+-15V, Rg=150 
Vcc=300V, Ic=20A, VGE=+-15V, Tj= 25 oC
toff
ton
100
Eon 125℃
2
種
.
n
g
機 si
1.5
tf
1
or
f
止
d
n
e
廃
10
Eoff 125℃
e
d
定
予 new
tr
Eoff 25℃
Eon 25℃
0.5
Err 125℃
Err 25℃
0
60
守
o
c
e
保r
80
100
300
Gate resistance : Rg [ ]
ot
500
0
mm
10
20
30
40
[ Inverter ]
Reverse bias safe operating area (max)
Vcc=300V, Ic=20A, VGE=+-15V, Tj= 125 oC
+VGE=15V, -VGE<=15V, Rg=>150, Tj<=125oC
N
1.1
50
Collector current : Ic [ A ]
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
60
1
Eoff
0.9
0.8
0.7
Eon
0.6
50
Collector current : Ic [ A ]
Switching time : ton, tr, toff, tf [ nsec ]
1000
Switching loss : Eon, Eoff, Err [ mJ / pulse ]
2.5
Switching loss : Eon, Eoff, Err [ mJ / pulse ]
0.5
40
30
20
10
Err
0.4
0
60
80
100
300
500
0
Gate resistance : Rg [ ]
Fuji Electric Device Technology Co.,Ltd.
200
400
600
800
Collector - Emitter voltage : VCE [ V ]
DWG.NO.
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
Collector current : Ic [ A ]
30
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MS6M00819
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[ Inverter ]
Reverse recovery characteristics (typ.)
Vcc=300V, VGE=+-15V, Rg=150 
[ Inverter ]
Forward current vs. Forward on voltage (typ.) / chip
40
trr 125℃
Tj=125 oC
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
Forward current : IF [ A ]
Tj=25 oC
30
20
10
100
trr 25℃
Irr 125℃
Irr 25℃
0
10
0
1
2
3
4
0
10
30
40
50
150
200
Forward current : IF [ A ]
[ Converter ]
Forward current vs. Forward on voltage (typ.) / chip
40
Forward current : IF [ A ]
Tj=25 oC
Tj=125 oC
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0.5
1
1.5
2
Forward on voltage : VFM [ V ]
t
No
[ Thermistor ]
Temperature characteristic (typ.)
Transient thermal resistance (max.)
10
FWD [Brake]
IGBT [Brake]
FWD [inverter]
IGBT [inverter]
CONV.Diode
1
Resistance : R [ ]
100
Thermal resistanse : Rth(j-c) [ oC / W ]
10
1
0.1
0.001
0.01
0.1
1
10
0.1
-50
Fuji Electric Device Technology Co.,Ltd.
0
50
100
Temperature [ oC ]
Pulse width : Pw [ sec ]
DWG.NO.
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
Forward on voltage : VF [ V ]
20
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H04-004-03a
[ Brake ]
Collector current vs. Collector-Emitter voltage
[Brake]
Collector current vs. Collector-Emitter voltage
o
Tj= 125oC (typ.) / chip
Tj= 25 C (typ.) / chip
40
40
VGE=20V 15V 13V
Collector current : Ic [ A ]
Collector current : Ic [ A ]
30
20
9V
13V
11V
20
9V
10
10
0
0
0
1
2
3
4
5
0
1
3
4
5
[ Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25oC (typ.) / chip
10
Tj=25 oC
Collector - Emitter voltage : VCE [ V ]
40
Tj=125 oC
30
Collector current : Ic [ A ]
2
Collector - Emitter voltage : VCE [ V ]
[ Brake ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.) / chip
20
8
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10
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Ic=30A
2
15A
7.5A
0
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0
1
2
3
4
mm
5
8
10
Collector - Emitter voltage : VCE [ V ]
ot
12
14
16
18
20
Gate - Emitter voltage : VGE [ V ]
[Brake]
Capacitance vs. Collector-Emitter voltage (typ.)
[ Inverter ]
Dynamic Gate charge (typ.)
VGE=0V, f= 1MHz, Tj= 25 oC
Vcc=300V, Ic=8A, Tj= 25 oC
1000
Collector - Emitter voltage : VCE [ V ]
N
4
Cies
100
Coes
Cres
22
500
25
400
20
300
15
200
10
100
5
0
10
0
5
10
15
20
25
30
10
20
30
40
50
60
70
Gate charge : Qg [ nC ]
DWG.NO.
Collector - Emitter voltage : VCE [ V ]
Fuji Electric Device Technology Co.,Ltd.
0
0
35
Gate - Emitter voltage : VGE [ V ]
Capacitance : Cies, Coes, Cres [ pF ]
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
Collector - Emitter voltage : VCE [ V ]
10
15V
VGE=20V
11V
30
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Warnings
- This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product
may be broken in case of using beyond the ratings.
製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。絶対最大定格を超えて使用すると、素子が破壊する
場合があります。
- Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment
from causing secondary destruction, such as fire, its spreading, or explosion.
万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ又はブレーカーを必ず
付けて火災，爆発，延焼等の２次破壊を防いでください。
- Use this product after realizing enough working on environment and considering of product's reliability life.
This product may be broken before target life of the system in case of using beyond the product's reliability life.
製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。製品の信頼性寿命
を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。
- When electric power is connected to equipments, rush current will be flown through rectifying diode to charge
DC capacitor. Guaranteed value of the rush current is specified as I2t (non-repetitive), however frequent rush
current through the diode might make it's power cycle destruction occur because of the repetitive power.
In application which has such frequent rush current, well consideration to product life time (i.e. suppressing
the rush current) is necessary.
I2 t(非繰返し)として表記されていますが、この突入電流が頻繁に流れるとI2 t破壊とは別に整流用ダイオードの繰返し負荷に
よるパワーサイクル耐量破壊を起こす可能性があります。突入電流が頻繁に流れるようなアプリケーションでは、突入電流値
を抑えるなど、製品寿命に十分留意してご使用下さい。
- If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide,
sulfurous acid gas), the product's performance and appearance can not be ensured easily.
酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観等の保証はできません。
- Power cycle capability is classified to delta-Tj mode and delta-Tc mode. Delta-Tc mode is due to rise and down
of case temperature (Tc), and depends on cooling design of equipment which use this product.
In application which has such frequent rise and down of Tc, well consideration of product life time is necessary.
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パワーサイクル耐量にはΔTjによる場合の他に、ΔTcによる場合があります。これはケース温度(Tc)の上昇下降による
熱ストレスであり、本製品をご使用する際の放熱設計に依存します。ケース温度の上昇下降が頻繁に起こる場合は、
製品寿命に十分留意してご使用下さい。
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a ‐ Please refer to mounting instructions (Technical Rep. No. : MT5F14628a) when you mount this product.
or
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本製品の実装にあたってはMounting Instructions (技術資料No. MT5F14628a) を参照してください。
- Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor
contact problem.
m
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主端子及び制御端子に応力を与えて変形させないで下さい。端子の変形により、接触不良などを引き起こす場合があります。
- Use this product with keeping the cooling fin's flatness between screw holes within 50um at 100mm and the
roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex
of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too
large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will
be worse and over heat destruction may occur.
冷却フィンはネジ取り付け位置間で平坦度を100mmで50um以下、表面の粗さは10um以下にして下さい。 過大な凸反り
があったりすると本製品が絶縁破壊を起こし、重大事故に発展する場合があります。また、過大な凹反りやゆがみ等があると、
本製品と冷却フインの間に空隙が生じて放熱が悪くなり、熱破壊に繋がることがあります。
t
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- In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the
thermal compound amount was not enough or its applying method was not suitable, its spreading will not be
enough, then, thermal conductivity will be worse and thermal run away destruction may occur.
Confirm spreading state of the thermal compound when its applying to this product.
(Spreading state of the thermal compound can be confirmed by removing this product after mounting.)
素子を冷却フィンに取り付ける際には、熱伝導を確保するためのコンパウンド等をご使用ください。又、塗布量が不足したり、
塗布方法が不適だったりすると、コンパウンドが十分に素子全体に広がらず、放熱悪化による熱破壊に繋がる事があります。
コンパウンドを塗布する際には、製品全面にコンパウンドが広がっている事を確認してください。
(実装した後に素子を取りはずすとコンパウンドの広がり具合を確認する事が出来ます。)
- It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA
specification. This product may be broken if the locus is out of the RBSOA.
ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にあることを確認して下さい。RBSOAの範囲を超えて使用すると素子が破壊
する可能性があります。
Fuji Electric Device Technology Co.,Ltd.
DWG.NO.
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
電源投入時に整流用ダイオードには、コンデンサーを充電する為の突入電流が流れます。この突入電流に対する保証値は
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MS6M00819
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H04-004-03a
- If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some
countermeasures against static electricity.
制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。取り扱い時は静電気対策を実施して下さい。
- Never add the excessive mechanical stress to the main or control terminals when the product is applied to
equipments. The module structure may be broken.
素子を装置に実装する際に、主端子や制御端子に過大な応力を与えないで下さい。端子構造が破壊する可能性があります。
- In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent
this malfunction. (Recommended value : -VGE = -15V)
逆バイアスゲート電圧-VGEが不足しますと誤点弧を起こす可能性があります。誤点弧を起こさない為に-VGEは十分な値で
設定して下さい。 （推奨値 : -VGE = -15V)
- In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in
the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction.
ターンオン dv/dt が高いと対抗アームのＩＧＢＴが誤点弧を起こす可能性があります。誤点弧を起こさない為の最適なドライブ
条件（+VGE, -VGE, RG等）でご使用下さい。
- Control the surge voltage by adding a protection circuit (=snubber circuit) to the IGBT. Use a film capacitor
in the snubber circuit, and then set it near the IGBT in order to bipass high frequency surge currents.
IGBTに保護回路(=スナバ回路)を付けてサージ電圧を吸収させてください。スナバ回路のコンデンサにはフィルムコンデンサ
を用い、IGBTの近くに配置して高周波サージ電圧を吸収する手段を講じてください。
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Cautions
- Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability.
However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or
death, damage to property like by fire, and other social damage resulted from a failure or malfunction of
the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant
design, spread-fire-preventive design, and malfunction-protective design.
富士電機デバイステクノロジーは絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、
誤動作する場合があります。富士電機デバイステクノロジー製半導体製品の故障または誤動作が、結果として人身事故・火災
等による財産に対する損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計など安全確保
のための手段を講じて下さい。
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- The application examples described in this specification only explain typical ones that used the Fuji Electric Device
Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the
enforcement rights.
本仕様書に記載してある応用例は、富士電機デバイステクノロジー製品を使用した代表的な応用例を説明するものであり、
本仕様書によって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。
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- The product described in this specification is not designed nor made for being applied to the equipment or
systems used under life-threatening situations. When you consider applying the product of this specification
to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices,
atomic control systems and submarine relaying equipment or systems, please apply after confirmation
of this product to be satisfied about system construction and required reliability.
本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを
目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力
制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に
満足することをご確認の上、ご利用下さい。
If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd.
Fuji Electric Device Technology Co.,Ltd.
DWG.NO.
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
- This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between
C-E terminals. Use this product within its absolute maximum voltage.
VCESを超えた電圧が印加された場合、アバランシェを起こして素子破壊する場合があります。VCEは必ず絶対定格の範囲内
でご使用下さい。
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