BC847BPDXV6T1, BC847BPDXV6T5 Dual General Purpose Transistor NPN/PNP Dual (Complimentary) http://onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low power surface mount applications. • Lead-Free Solder Plating MAXIMUM RATINGS - NPN Rating (3) (2) Q1 Symbol Value Unit Collector - Emitter Voltage VCEO 45 V Collector - Base Voltage VCBO 50 V Emitter - Base Voltage VEBO 6.0 V IC 100 mAdc Collector Current Continuous Q2 (4) (5) (6) BC847BPDX6T1 6 MAXIMUM RATINGS - PNP Rating (1) 54 1 Symbol Value Unit Collector - Emitter Voltage VCEO -45 V Collector - Base Voltage VCBO -50 V Emitter - Base Voltage VEBO -5.0 V IC -100 mAdc Collector Current Continuous 2 3 SOT-563 CASE 463A PLASTIC MARKING DIAGRAM 4F D THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Symbol Max Unit PD 357 (Note 1) 2.9 (Note 1) mW mW/°C Derate above 25°C Thermal Resistance Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C 4F = Specific Device Code D = Date Code ORDERING INFORMATION RJA 350 (Note 1) °C/W Symbol Max Unit PD 500 (Note 1) 4.0 (Note 1) mW mW/°C Thermal Resistance Junction-to-Ambient RJA 250 (Note 1) °C/W Junction and Storage Temperature Range TJ, Tstg - 55 to +150 °C Device Package Shipping BC847BPDXV6T1 SOT-563 4 mm pitch 4000/Tape & Reel BC847BPDXV6T5 SOT-563 2 mm pitch 8000/Tape & Reel 1. FR-4 @ Minimum Pad Semiconductor Components Industries, LLC, 2003 March, 2003 - Rev. 0 1 Publication Order Number: BC847BPDXV6T1/D BC847BPDXV6T1, BC847BPDXV6T5 ELECTRICAL CHARACTERISTICS (NPN) (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 45 - - 50 - - 50 - - 6.0 - - - - 15 5.0 200 150 290 475 Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 10 mA) V(BR)CEO Collector - Emitter Breakdown Voltage (IC = 10 µA, VEB = 0) V(BR)CES Collector - Base Breakdown Voltage (IC = 10 A) V(BR)CBO Emitter - Base Breakdown Voltage (IE = 1.0 A) V(BR)EBO Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ICBO V V V V nA µA ON CHARACTERISTICS DC Current Gain (IC = 10 µA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) hFE - Collector - Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector - Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) - - 0.25 0.6 V Base - Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base - Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) - 0.7 0.9 - V Base - Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base - Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580 - 660 - 700 770 mV fT 100 - - MHz Cobo - - 4.5 pF - - 10 SMALL- SIGNAL CHARACTERISTICS Current - Gain - Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) http://onsemi.com 2 NF dB BC847BPDXV6T1, BC847BPDXV6T5 ELECTRICAL CHARACTERISTICS (PNP) (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit -45 - - -50 - - -50 - - -5.0 - - - - -15 -4.0 200 150 290 475 - - -0.3 -0.65 - -0.7 -0.9 - -0.6 - - -0.75 -0.82 fT 100 - - MHz Output Capacitance (VCB = -10 V, f = 1.0 MHz) Cob - - 4.5 pF Noise Figure (IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) NF - - 10 dB OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = -10 mA) V(BR)CEO Collector - Emitter Breakdown Voltage (IC = -10 µA, VEB = 0) V(BR)CES Collector - Base Breakdown Voltage (IC = -10 A) V(BR)CBO Emitter - Base Breakdown Voltage (IE = -1.0 A) V(BR)EBO Collector Cutoff Current (VCB = -30 V) Collector Cutoff Current (VCB = -30 V, TA = 150°C) ICBO V V V V nA µA ON CHARACTERISTICS DC Current Gain (IC = -10 µA, VCE = -5.0 V) (IC = -2.0 mA, VCE = -5.0 V) hFE Collector - Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) VCE(sat) Base - Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) VBE(sat) Base - Emitter On Voltage (IC = -2.0 mA, VCE = -5.0 V) (IC = -10 mA, VCE = -5.0 V) VBE(on) - V V V SMALL- SIGNAL CHARACTERISTICS Current - Gain - Bandwidth Product (IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz) http://onsemi.com 3 BC847BPDXV6T1, BC847BPDXV6T5 TYPICAL NPN CHARACTERISTICS 1.0 VCE = 10 V TA = 25°C 1.5 TA = 25°C 0.9 0.8 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 1.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10 0.7 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 50 2.0 5.0 10 1.0 20 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 2.0 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) 20 1.0 −55°C to +125°C 1.2 1.6 2.0 2.4 2.8 f, T CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) C, CAPACITANCE (pF) TA = 25°C Cib 3.0 Cob 2.0 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 100 Figure 4. Base-Emitter Temperature Coefficient 10 5.0 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 Figure 3. Collector Saturation Region 7.0 50 70 100 Figure 2. “Saturation” and “On” Voltages θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Normalized DC Current Gain 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 40 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 Figure 5. Capacitances 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 6. Current-Gain - Bandwidth Product http://onsemi.com 4 50 BC847BPDXV6T1, BC847BPDXV6T5 TYPICAL PNP CHARACTERISTICS −1.0 1.5 TA = 25°C −0.9 VCE = −10 V TA = 25°C VBE(sat) @ IC/IB = 10 −0.8 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 1.0 0.7 0.5 −0.7 VBE(on) @ VCE = −10 V −0.6 −0.5 −0.4 −0.3 −0.2 0.3 VCE(sat) @ IC/IB = 10 −0.1 0.2 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 IC, COLLECTOR CURRENT (mAdc) 0 −0.1 −0.2 −100 −200 1.0 −2.0 TA = 25°C −1.6 −1.2 −0.8 IC = −10 mA IC = −50 mA IC = −200 mA IC = −100 mA IC = −20 mA −0.4 0 −0.02 −55°C to +125°C 1.2 1.6 2.0 2.4 2.8 −10 −20 −0.1 −1.0 IB, BASE CURRENT (mA) −0.2 10 Cib 7.0 TA = 25°C 5.0 Cob 3.0 2.0 1.0 −0.4 −0.6 −1.0 −2.0 −4.0 −6.0 −10 −10 −1.0 IC, COLLECTOR CURRENT (mA) −100 Figure 10. Base-Emitter Temperature Coefficient f, T CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) Figure 9. Collector Saturation Region C, CAPACITANCE (pF) −100 −50 Figure 8. “Saturation” and “On” Voltages θVB , TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR−EMITTER VOLTAGE (V) Figure 7. Normalized DC Current Gain −0.5 −1.0 −2.0 −5.0 −10 −20 IC, COLLECTOR CURRENT (mAdc) −20 −30 −40 400 300 200 150 VCE = −10 V TA = 25°C 100 80 60 40 30 20 −0.5 −1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 11. Capacitances Figure 12. Current-Gain - Bandwidth Product http://onsemi.com 5 BC847BPDXV6T1, BC847BPDXV6T5 INFORMATION FOR USING THE SOT-563 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.3 0.45 1.0 1.35 0.5 0.5 Dimensions in mm SOT-563 SOT-563 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the SOT-563 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-563 package, PD can be calculated as follows: PD = The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. TJ(max) - TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 150 milliwatts. PD = 150°C - 25°C 833°C/W = 150 milliwatts The 833°C/W for the SOT-563 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-563 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device http://onsemi.com 6 BC847BPDXV6T1, BC847BPDXV6T5 PACKAGE DIMENSIONS SOT-563, 6 LEAD CASE 463A-01 ISSUE O A -X- 5 6 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. C K 4 B -Y- 3 D G STYLE 1: PIN 1. 2. 3. 4. 5. 6. J 5 PL 6 0.08 (0.003) EMITTER 1 BASE 1 COLLECTOR 2 EMITTER 2 BASE 2 COLLECTOR 1 DIM A B C D G J K S S M X Y STYLE 2: PIN 1. 2. 3. 4. 5. 6. STYLE 3: PIN 1. 2. 3. 4. 5. 6. EMITTER 1 EMITTER2 BASE 2 COLLECTOR 2 BASE 1 COLLECTOR 1 CATHODE 1 CATHODE 1 ANODE/ANODE 2 CATHODE 2 CATHODE 2 ANODE/ANODE 1 http://onsemi.com 7 STYLE 4: PIN 1. 2. 3. 4. 5. 6. MILLIMETERS MIN MAX 1.50 1.70 1.10 1.30 0.50 0.60 0.17 0.27 0.50 BSC 0.08 0.18 0.10 0.30 1.50 1.70 COLLECTOR COLLECTOR BASE EMITTER COLLECTOR COLLECTOR INCHES MIN MAX 0.059 0.067 0.043 0.051 0.020 0.024 0.007 0.011 0.020 BSC 0.003 0.007 0.004 0.012 0.059 0.067 BC847BPDXV6T1, BC847BPDXV6T5 Thermal Clad is a registered trademark of the Bergquist Company. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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