HD151TS304RP Spread Spectrum Clock for EMI Solution ADE-205-657E (Z) Rev. 5 Oct. 2002 Description The HD151TS304 is a high-performance Spread Spectrum Clock modulator. It is suitable for low EMI solution. Features • • • • Supports 10 MHz to 60 MHz operation. (Designed for XIN = 24 MHz and 48 MHz) 1 copy of clock out with spread spectrum modulation @3.3 V 1 copy of reference clock @3.3 V Programmable spread spectrum modulation (±0.25%, ±0.5%, ±1.5% central spread modulation and spread spectrum disable mode.) • SOP–8pin • Pin to pin compatible with HD151TS301RP Key Specifications • • • • • Supply voltages : VDD = 3.3 V±0.165 V Ta = 0 to 70°C operating range Clock output duty cycle = 50±5% Cycle to cycle jitter = ±250 ps typ. Ordering Information Part Name Package Type Package Code Package Abbreviation Taping Abbreviation (Quantity) HD151TS304RPEL SOP-8 pin (JEDEC) FP-8DC RP EL (2,500 pcs / Reel) Note: Please consult the sales office for the above package availability. HD151TS304RP Block Diagram VDD GND CLKOUT XIN OSC 1/m SSCCLKOUT Synthesizer XOUT R=1 MΩ 1/n SSC Modulator SEL0 R=100 kΩ Mode Control SEL1 R=100 kΩ Pin Arrangement SSCCLKOUT 1 8 SEL1 VDD 2 7 CLKOUT GND 3 6 SEL0 XIN 4 5 XOUT (Top view) Rev.5, Oct. 2002, page 2 of 12 HD151TS304RP SSC Function Table SEL1 :0 Spread Percentage 00 ±0.5% 01 ±1.5% 10 SSC OFF 11 ±0.25% Note: ±1.5% SSC is selected for default by internal pull-up & down resistors. Clock Frequency Table XIN(MHz) SSCCLKOUT(MHz) 48 48*2 *1 24*2 48 24 CLKOUT(MHz) *1 24 Notes: 1. With spread spectrum modulation. 2. Without spread spectrum modulation. Pin Descriptions Pin name No. Type Description GND 3 Ground GND pin VDD 2 Power Power supplies pin. Normally 3.3 V. CLKOUT 7 Output Normally 3.3 V reference clock output. SSCCLKOUT 1 Output Spread spectrum modulated clock output. XIN 4 Input Oscillator input. XOUT 5 Output Oscillator output. SEL0 6 Input SSC mode select pin. LVCMOS level input. Pull-up by internal resistor. (100 kΩ). SEL1 8 Input SSC mode select pin. LVCMOS level input. Pull–down by internal resistor (100 kΩ). Rev.5, Oct. 2002, page 3 of 12 HD151TS304RP Absolute Maximum Ratings Item Symbol Ratings Unit Supply voltage VDD –0.5 to 4.6 V VI –0.5 to 4.6 V VO –0.5 to VDD+0.5 V Input clamp current IIK –50 mA Output clamp current IOK –50 mA VO < 0 Continuous output current IO ±50 mA VO = 0 to VDD 0.7 W –65 to +150 °C Input voltage Output voltage *1 Maximum power dissipation at Ta = 55°C (in still air) Storage temperature Notes: Tstg Conditions VI < 0 Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. 1. The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed. Recommended Operating Conditions Item Symbol Min Typ Max Unit Conditions Supply voltage VDD 3.135 3.3 3.465 V –0.3 — VDD+0.3 V DC input signal voltage High level input voltage VIH 2.0 — VDD+0.3 V Low level input voltage VIL –0.3 — 0.8 V Operating temperature Ta 0 — 70 °C 45 50 55 % Input clock duty cycle Rev.5, Oct. 2002, page 4 of 12 HD151TS304RP DC Electrical Characteristics Ta = 0 to 70°C, VDD = 3.3 V±5% Item Symbol Min Typ Max Unit Input low voltage VIL — — 0.8 V Input high voltage VIH 2.0 — — V Input current II — — ±10 µA — — ±100 1 — 4 V / ns 20% – 80% — — 4 pF SEL0, SEL1 — 7 — mA XIN = 24 MHz, CL = 0 pF, VDD = 3.3 V Input slew rate Input capacitance CI Operating current Test Conditions VI = 0 V or 3.465 V, VDD = 3.465 V, XIN pin VI = 0 V or 3.465 V, VDD = 3.465 V, SEL0, SEL1 pins DC Electrical Characteristics / Clock Output & SSC Clock Output Ta = 0 to 70°C, VDD = 3.3 V±5% Item Symbol Min Typ Max Unit Test Conditions Output voltage VOH 3.1 — — V IOH = –1 mA, VDD = 3.3 V VOL — — 50 mV IOL = 1 mA, VDD = 3.3 V IOH — –40 — mA VOH = 1.5 V IOL — 40 — 1 Output current * Note: VOL = 1.5 V 1. Parameters are target of design. Not 100% tested in production. Rev.5, Oct. 2002, page 5 of 12 HD151TS304RP AC Electrical Characteristics / Clock Output & SSC Clock Output Ta = 25°C, VDD = 3.3 V, CL = 30 pF Item Cycle to cycle jitter Output frequency Slew rate *1, 2 Min Typ Max Unit Test Conditions Notes tCCS — | 250 | | 300 | ps SSCCLKOUT, 24 MHz — | 250 | | 300 | SSCCLKOUT, 48 MHz SSCOFF SEL1:0 = 10 Fig1 — | 250 | | 300 | SSCCLKOUT, 24 MHz — | 250 | | 300 | SSCCLKOUT, 48 MHz — | 250 | | 300 | SSCCLKOUT, 24 MHz — | 250 | | 300 | SSCCLKOUT, 48 MHz — | 250 | | 300 | CLKOUT, 24 MHz & 48MHz Fig1 23.8 — 24.2 SSCCLKOUT, XIN = 24 MHz SSCOFF SEL1:0 = 10 47.3 — 48.7 SSCCLKOUT, XIN = 48 MHz 23.7 — 24.3 SSCCLKOUT, XIN = 24 MHz 47.2 — 48.8 SSCCLKOUT, XIN = 48 MHz 23.4 — 24.6 SSCCLKOUT, XIN = 24 MHz 46.6 — 49.4 SSCCLKOUT, XIN = 48 MHz 23.8 — 24.2 CLKOUT, 24 MHz 47.3 — 48.7 CLKOUT, 48 MHz *1, 2 *1 Clock duty cycle Symbol tSL *1 MHz 1.0 — — V/ns 45 50 55 % — 30 — Ω Spread spectrum *1 modulation frequency — 33 — KHz Input clock frequency 10 — 60 MHz — — 2 ms Output impedance Stabilization time Notes: *1 *1,3 SSC= ±0.25% SEL1:0 = 11 Fig1 SSC= ±1.5% SEL1:0 = 01 Fig1 SSC= ±0.25% SEL1:0 = 11 SSC= ±1.5% SEL1:0 = 01 @48 MHz CLKOUT 0.4 V to 2.4 V @48 MHz SSCCLKOUT 1. Parameters are target of design. Not 100% tested in production. 2. Cycle to cycle jitter and output frequency are included spread spectrum modulation. 3. Stabilization time is the time required for the integrated circuit to obtain phase lock of its input signal after power up. Rev.5, Oct. 2002, page 6 of 12 HD151TS304RP SSCCLKOUT (or CLKOUT) tcycle n tcycle n+1 t CCS = (tcycle n) - (tcycle n+1) Figure 1 Cycle to cycle jitter Rev.5, Oct. 2002, page 7 of 12 HD151TS304RP Application Information 1. Recommended Circuit Configuration The power supply circuit of the optimal performance on the application of a system should refer to Fig. 2. VDD decoupling is important to both reduce Jitter and EMI radiation. The C1 decoupling capacitor should be placed as close to the VDD pin as possible, otherwise the increased trace inductance will negate its decoupling capability. The C2 decoupling capacitor shown should be a tantalum type. R1 1 SSCCLKOUT 8 SEL1 R2 2 VDD C2 7 CLKOUT C1 3 6 SEL0 TS300 Series GND GND 4 5 GND Notes: XIN XOUT (Crystal or Reference input) (Crystal or Not connection) C1 = High frequency supply decoupling capacitor. (0.1 µF recommended) C2 = Low frequency supply decoupling capacitor. (22 µF tantalum type recommended) R1, R2 = Match value to line impedance. (22 Ω Reference value) Figure 2 Recommended circuit configuration Rev.5, Oct. 2002, page 8 of 12 HD151TS304RP 2. Example Board Layout Configuration VDD (+3.3 V Supply) P 22 µF FB G R1 1 SSCCLKOUT 8 0.1 µF R2 7 G G 3 6 4 5 Crystal connection or Reference input Note: CLKOUT Crystal connection or Not connection G Via to GND plane R1, R2 = Match value to line impedance. (22 Ω Reference value) FB = Ferrite bead. Figure 3 Example Board Layout Rev.5, Oct. 2002, page 9 of 12 HD151TS304RP 3. Example of TS300 EMI Solution IC’s Application Spread Spectrum Modulated Clock XTAL XOUT TS30X CPU & ASIC SSC CLKOUT Memory System BUS XIN Graphics System Cont. Ref. Clock 3.3 V CMOS level ref. Clock Fig 4 Ref. Clock Input Example XIN XTAL XOUT TS30X CPU & ASIC SSC CLKOUT System BUS Spread Spectrum Modulated Clock Memory Graphics System Cont. Fig 5 XTAL Ref. Clock Input Example Rev.5, Oct. 2002, page 10 of 12 HD151TS304RP Package Dimensions As of July, 2002 Unit: mm 3.95 4.90 5.3 Max 5 8 *0.22 ± 0.03 0.20 ± 0.03 4 1.75 Max 1 0.75 Max + 0.10 6.10 – 0.30 1.08 0.14 – 0.04 *0.42 ± 0.08 0.40 ± 0.06 + 0.11 0˚ – 8˚ 1.27 + 0.67 0.60 – 0.20 0.15 0.25 M *Dimension including the plating thickness Base material dimension Hitachi Code JEDEC JEITA Mass (reference value) FP-8DC Conforms — 0.085 g Rev.5, Oct. 2002, page 11 of 12 HD151TS304RP Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Sales offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL http://www.hitachisemiconductor.com/ For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-6538-6533/6538-8577 Fax : <65>-6538-6933/6538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Europe GmbH Electronic Components Group Dornacher Str 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://semiconductor.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-2735-9218 Fax : <852>-2730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 7.0 Rev.5, Oct. 2002, page 12 of 12