NBT-168 4 MICROWAVE GaInP/GaAs DISCRETE HBT DC TO 12GHz Typical Applications • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier GENERAL PURPOSE AMPLIFIERS 4 Product Description The NBT-168 discrete HBT is ideal for low-cost amplifier and oscillator applications up to 12GHz. Low noise figure, high gain, high current capability, and medium output give this device high dynamic range and excellent linearity for cascaded amplifier designs. This device is also ideally suited for VCO/buffer amplifier applications. The NBT-168 is packaged in a low-cost, surface-mount ceramic package, providing ease of assembly for high-volume tapeand-reel requirements. It is available in either packaged or chip (NBT-168-D) form, where its gold metallization is ideal for hybrid circuit designs. Optimum Technology Matching® Applied Si BJT GaAs HBT GaAs MESFET Si Bi-CMOS SiGe HBT Si CMOS GaN HEMT SiGe Bi-CMOS !GaInP/HBT 2.94 min 3.28 max Pin 1 Indicator 1.00 min 1.50 max HT Lid ID 1.70 min 1.91 max 2.39 min 2.59 max 0.025 min 0.125 max 0.50 nom 0.50 nom Pin 1 Indicator RF OUT Ground Ground RF OUT 0.98 min 1.02 max 0.38 nom All Dimensions in Millimeters 0.37 min 0.63 max Notes: 1. Solder pads are coplanar to within ±0.025 mm. 2. Lid will be centered relative to frontside metallization with a tolerance of ±0.13 mm. 3. Mark to include two characters and dot to reference pin 1. Package Style: MPGA, Bowtie, 3x3, Ceramic Features • Reliable, Low-Cost HBT Design • 26.0dB [email protected] • Positive Power Supply Operation Pin 1 Indicator • 4-Finger Device for High-Current 1 2 3 8 9 4 RF OUT Capability Ground Ground • Low Noise Figure, [email protected] RF IN 7 6 5 Ordering Information NBT-168 Microwave GaInP/GaAs Discrete HBT DC to 12GHz NBT-168-T1 or -T3 Tape & Reel, 1000 or 3000 Pieces (respectively) NBT-168-D NBT-168 Chip Form NBT-168-E Fully Assembled Evaluation Board Functional Block Diagram Rev A1 020412 RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 4-1 NBT-168 Absolute Maximum Ratings Parameter GENERAL PURPOSE AMPLIFIERS 4 RF Input Power Power Dissipation VCBO VCEO VEBO Collector Current Junction Temperature Operating Temperature Storage Temperature Rating Unit +10 250 8 6 1.5 42 200 -45 to +85 -65 to +150 dBm mW V mA °C °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Exceeding any one or a combination of these limits may cause permanent damage. Parameter Specification Min. Typ. Max. Unit Overall Collector Cutoff Current, ICBO Emitter Cutoff Current, IEBO DC Current Gain, hFE Current Gain, H21 Small Signal Power Gain, S21 Noise Figure, NF Reverse Isolation, S12 90 24 -30 110 20 26 1.7 -32 0.1 0.1 130 µA µA dB dB dB dB Condition VC =+3.9V, ICC =25mA, Z0 =50Ω, TA =+25°C VCB =5.0V, IE =0 VEB =1.0V, IC =0 VCE=4.0V, IC =25mA VCE=4.0V, IC =25mA, 2GHz f=1.0GHz f=2.0GHz f=1.0GHz MTTF versus Temperature @ VCE =3.9V, ICC =25mA Case Temperature Junction Temperature MTTF 85 112 >1,000,000 °C °C hours 277 °C/W Thermal Resistance θJC 4-2 Thermal Resistance, at any temperature (in °C/Watt) can be estimated by the following equation: θJC (°C/Watt)=277[TJ(°C)/112] Rev A1 020412 NBT-168 Function EMITTER 2 3 4 EMITTER EMITTER BASE 5 6 7 8 EMITTER EMITTER EMITTER COLLECTOR Description Interface Schematic For best high frequency performance, this should be grounded. For best performance, keep traces physically short and connect immediately to ground plane. Same as pin 2. Same as pin 2. RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. Base bias network should provide 1.3V to the base and be a current source sufficient to supply the correct base current for the collector current set. Same as pin 2. Same as pin 2. Same as pin 2. Collector bias. Must provide collector voltage and current. Biasing is accomplished with an external series resistor and choke inductor to VCC. The resistor is selected to set the DC current into this pin at the desired level. The resistor value is determined by the following equation: ( V CC – V C ) R = ---------------------------I CC 9 EMITTER Rev A1 020412 4 GENERAL PURPOSE AMPLIFIERS Pin 1 Care should be taken to ensure the current through the devices never exceeds the maximum datasheet setting. Additionally, care should be taken to ensure the voltages between the collector and emitter (pins 3, 2 and 4), VCE is typically 3.5V to 4.0V. Because DC is present on this pin, a DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed. Same as pin 2. COLLECTOR BASE EMITTER 4-3 NBT-168 Typical Bias Configuration Application notes related to biasing circuit, device footprint, and thermal considerations are available on request. VBB VCC RCC RB1 4 GENERAL PURPOSE AMPLIFIERS L choke (optional) L choke (optional) In Out NBT-168 C block VBE RB2 C block VCE Note: RF bypass circuitry omitted for simplicity. Application Notes Die Attach The die attach process mechanically attaches the die to the circuit substrate. In addition, it electrically connects the ground to the trace on which the chip is mounted, and establishes the thermal path by which heat can leave the chip. Wire Bonding Electrical connections to the chip are made through wire bonds. Either wedge or ball bonding methods are acceptable practices for wire bonding. Assembly Procedure Epoxy or eutectic die attach are both acceptable attachment methods. Top and bottom metallization are gold. Conductive silver-filled epoxies are recommended. This procedure involves the use of epoxy to form a joint between the backside gold of the chip and the metallized area of the substrate. A 150°C cure for 1 hour is necessary. Recommended epoxy is Ablebond 84-1LMI from Ablestik. Bonding Temperature (Wedge or Ball) It is recommended that the heater block temperature be set to 160°C±10°C. 4-4 Rev A1 020412 NBT-168 Tape and Reel Dimensions All Dimensions in Millimeters T A O B S D 4 330 mm (13") REEL ITEMS Diameter Micro-X, MPGA SYMBOL SIZE (mm) B 330 +0.25/-4.0 FLANGE Thickness Space Between Flange HUB GENERAL PURPOSE AMPLIFIERS F T F Outer Diameter Spindle Hole Diameter O S Key Slit Width Key Slit Diameter A D SIZE (inches) 13.0 +0.079/-0.158 18.4 MAX 12.4 +2.0 0.724 MAX 0.488 +0.08 102.0 REF 4.0 REF 13.0 +0.5/-0.2 0.512 +0.020/-0.008 1.5 MIN 20.2 MIN 0.059 MIN 0.795 MIN PIN 1 User Direction of Feed 4.0 All dimensions in mm See Note 1 2.00 ± 0.05 1.5 See Note 6 0.30 ± 0.05 +0.1 -0.0 A 1.5 MIN. 1.75 R0.3 MAX. 5.50 ± 0.05 See Note 6 12.00 ± 0.30 Bo Ko Ao 8.0 A R0.5 TYP SECTION A-A NOTES: 1. 10 sprocket hole pitch cumulative tolerance ±0.2. 2. Camber not to exceed 1 mm in 100 mm. 3. Material: PS+C 4. Ao and Bo measured on a plane 0.3 mm above the bottom of the pocket. 5. Ko measured from a plane on the inside bottom of the pocket to the surface of the carrier. 6. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole. Rev A1 020412 Ao = 3.6 MM Bo = 3.6 MM Ko = 1.7 MM 4-5 NBT-168 Collector Current versus Base to Emitter Voltage Current Voltage Characteristics (NBT-168) (NBT-168) 35.0 0.045 0.040 30.0 0.035 0.030 20.0 IC (A) 0.025 15.0 0.020 0.015 10.0 0.010 5.0 0.005 0.0 Pout (dBm) Series3 Series4 0.000 -5.0 Gain (dB) Series7 Series5 -0.005 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.000 1.000 2.000 Base to Emitter Voltage (VBE) 3.000 4.000 5.000 6.000 VCE (V) Frequency versus Noise Figure Insertion Power Gain versus Frequency (NBT-168) (NBT-168) 35.0 5.0 4.5 30.0 Insertion Power Gain (dB) 4.0 Noise Figure (dB) GENERAL PURPOSE AMPLIFIERS 4 Collector Current, IC (mA) 25.0 3.5 3.0 2.5 25.0 20.0 15.0 10.0 2.0 5.0 1.5 1.0 0.0 1.0 1.5 2.0 Frequency (GHz) 4-6 2.5 3.0 0.1 1.0 10.0 100.0 Frequency (GHz) Rev A1 020412