HAT3001F Silicon N Channel / P Channel Complementary Power MOS FET Application SOP–8 Power switching 8 5 7 6 Features • • • • 5 6 D D 7 8 D D Low on–resistance Capable of 2.5V gate drive Low drive current High density mounting Ordering Information Hitachi Cord FP–8D 4 4 G 2 G ———————————————————— 3 1 2 S3 S1 MOS1 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS2 ———————————————————— EIAJ Cord SC–527–8A ———————————————————— JEDEC Cord — ———————————————————— Table 1 Absolute Maximum Ratings (Ta = 25°C) Ratings ———————— Item Symbol Nch Pch Unit ——————————————————————————————————————————— Drain to source voltage VDSS 30 –30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±10 ±10 V ——————————————————————————————————————————— Drain current ID 2.5 –2.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 10 –10 A ——————————————————————————————————————————— Channel dissipation Pch*** 1.5 W ——————————————————————————————————————————— Channel dissipation Pch** 1 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** 1 Drive operation When using the glass epoxy board (40 x 40 x 1.6 mm) *** 2 Drive operation When using the glass epoxy board (40 x 40 x 1.6 mm) HAT3001F Table 2 Electrical Characteristics N Channel (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown voltage V(BR)DSS 30 — — V ID = 10 mA, VGS = 0 ——————————————————————————————————————————— Gate to source breakdown voltage V(BR)GSS ±10 — — V IG = ±200 µA, VDS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±6.5 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 10 µA VDS = 30 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 0.5 — 1.5 V VDS = 10 V, ID = 1 mA ——————————————————————————————————————————— Static drain to source on state resistance RDS(on) — 0.1 0.15 Ω ID = 2A VGS = 4V * ———————————————————————— — 0.13 0.22 Ω ID = 2A VGS = 2.5V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 2 4 — S ID = 2 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 380 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 200 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 70 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 15 — ns VGS = 4 V, ID = 2 A ———————————————————————————————— Rise time tr — 80 — ns VDD = 10 V ———————————————————————————————— Turn–off delay time td(off) — 70 — ns ———————————————————————————————— Fall time tf — 70 — ns ——————————————————————————————————————————— Body–drain diode forward voltage VDF — 0.8 — V IF = 2.5A, VGS = 0 ——————————————————————————————————————————— Body–drain diode reverse recovery time trr — 45 — ns IF = 2.5A, VGS = 0 diF / dt = 20 A / µs ——————————————————————————————————————————— * Pulse Test HAT3001F Table 2 Electrical Characteristics P Channel (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown voltage V(BR)DSS –30 — — V ID = –10 mA, VGS = 0 ——————————————————————————————————————————— Gate to source breakdown voltage V(BR)GSS ±10 — — V IG = ±200 µA, VDS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±6.5 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –10 µA VDS = –30 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –0.5 — –1.5 V VDS = –10 V, ID = –1 mA ——————————————————————————————————————————— Static drain to source on state resistance RDS(on) — 0.12 0.16 Ω ID = –2 A VGS = –4 V * ———————————————————————— — 0.17 0.24 Ω ID = –2 A VGS = –2.5 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 3.0 5.0 — S ID = –2 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 720 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 345 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 115 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — tr — td(off) — tf — VDF — 16 — ns VGS = –4 V, ID = –2 A ———————————————————————————————— Rise time 100 — ns VDD = –10 V ———————————————————————————————— Turn–off delay time 120 — ns ———————————————————————————————— Fall time 100 — ns ——————————————————————————————————————————— Body–drain diode forward voltage –0.9 — V IF = –2.5 A, VGS = 0 ——————————————————————————————————————————— Body–drain diode reverse recovery time trr — 100 — ns IF = –2.5 A, VGS = 0 diF / dt = 20A / µs ——————————————————————————————————————————— * Pulse Test HAT3001F(N channel) Power vs. Temperature Derating Test Condition : When using the glass epoxy board (40 x 40 x 1.6 mm) 1.5 30 I D (A) Pch (W) Maximum Safe Operation Area 100 2.0 10 µs 1 m s PW 10 = DC m Op s er Operation in ati on this area is ** limited by R DS(on) Drain Current 2 iv Dr e 1 ive Op er n 0 Dr tio 0.5 a er Op Channel Dissipation 3 1.0 50 at ion 1 0.3 0.1 0.03 100 150 Ambient Temperature 200 0.01 0.1 Ta (°C) 2.5 V ID (A) 6V 4V 3V 6 2V 4 2 VGS = 1.5 V 8 2 4 6 Drain to Source Voltage 8 V DS (V) Tc = 75°C –25°C 6 25°C 4 2 V DS = 10 V Pulse Test Pulse Test 0 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V) 10 Drain Current I D (A) Drain Current 8 Ta = 25 °C 1 shot pulse Typical Transfer Characteristics Typical Output Characteristics 10 10 V 100 µs 10 10 0 1 2 3 Gate to Source Voltage 5 4 V GS (V) HAT3001F(N channel) Drain to Source On State Resistance R DS(on) ( Ω ) 0.3 Pulse Test 0.4 0.2 ID=2A 0.1 1A Static Drain to Source on State Resistance R DS(on) ( Ω) 2 4 6 Gate to Source Voltage 8 I D = 0.5 A, 1 A, 2 A 4V 0.05 0 –40 0.1 4V V GS (V) V GS = 2.5 V 0.10 VGS = 2.5 V 0.01 0.1 10 Static Drain to Source on State Resistance vs. Temperature 0.25 Pulse Test 0.5 A 1A 0.20 2A 0.15 0.2 0.02 0.5 A 0 Static Drain to Source on State Resistance vs. Drain Current 1 Pulse Test 0.5 0.05 0 40 80 120 160 Case Temperature Tc (°C) Forward Transfer Admittance |yfs| (S) V DS(on) (V) 0.5 Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 50 20 0.2 0.5 1 Drain Current 2 5 I D (A) 10 Forward Transfer Admittance vs. Drain Current V DS = 10 V Pulse Test 10 75 °C 25 °C 5 Tc = –25 °C 2 1 0.5 0.1 0.2 0.5 1 2 Drain Current I D (A) 5 10 HAT3001F(N channel) Body–Drain Diode Reverse Recovery Time 10000 di/dt = 20 A/µs V GS = 0, Ta = 25°C Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 500 200 100 50 0 Ciss 300 Coss 100 Crss 0 6 V GS I D = 2.5 A V DD = 25 V 10 V 5V 4 8 12 16 Gate Charge Qg (nc) 4 2 0 20 Switching Time t (ns) V DS 8 500 V GS (V) V DD = 5 V 10 V 25 V 10 20 30 40 50 Drain to Source Voltage V DS (V) Gate to Source Voltage V DS (V) Drain to Source Voltage 10 20 10 1000 10 Dynamic Input Characteristics 30 3000 0.5 0.2 1 2 5 10 Reverse Drain Current I DR (A) 50 40 VGS = 0 f = 1 MHz 30 20 10 0.1 Typical Capacitance vs. Drain to Source Voltage Switching Characteristics 200 tr t d(off) 100 50 tf 20 t d(on) 10 5 0.1 V GS = 4 V, V DD = 10 V PW = 3 µs, duty < 1 % 0.2 0.5 1 Drain Current 2 5 I D (A) 10 HAT3001F(N channel) Reverse Drain Current vs. Source to Drain Voltage 10 Reverse Drain Current I DR (A) Pulse Test 8 6 5V V GS = 0, –5 V 4 2 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 V SD (V) HAT3001F(P channele) Power vs. Temperature Derating Maximum Safe Operation Area –100 Dr ive 1.0 Op 1 er ion Op at ive er Dr 0.5 0 50 at –1 10 Op s er 100 –0.01 1 shot pulse –1 –3 –10 –30 –100 –0.1 –0.3 Drain to Source Voltage V DS (V) 150 200 Ta (°C) Typical Output Characteristics –10 V –5 V Ta = 25 °C Typical Transfer Characteristics –10 Pulse Test –2.5 V (A) –4 V –3.5 V –3 V –6 –2 V –4 –2 –8 –6 –2 –4 –6 Drain to Source Voltage –8 –10 V DS (V) 25 °C Tc = –25 °C 75 °C –4 –2 VGS = –1.5 V 0 DC m = m s Operation in at –0.3 this area is ion ** limited by R DS(on) –0.1 ID –8 1 PW –3 –0.03 Drain Current I D (A) –10 10 µs 100 µs –10 ion Ambient Temperature Drain Current Drain Current 1.5 –30 I D (A) Test Condition : When using the glass epoxy board (40 x 40 x 1.6 mm) 2 Channel Dissipation Pch (W) 2.0 V DS = –10 V Pulse Test 0 –1 –2 –3 Gate to Source Voltage –4 –5 V GS (V) HAT3001F(P channele) Static Drain to Source on State Resistance vs. Drain Current 1 –0.5 Drain to Source Saturation Voltage V DS(on) (V) Pulse Test –0.4 –0.3 I D = –2 A –0.2 –1 A –0.5 A 0.1 0 –40 0.1 –4 V Pulse Test 0.01 –5 –0.1 –0.2 –0.5 –1 –2 Drain Current I D (A) –8 –10 V GS (V) 0.4 0.2 VGS = –2.5 V 0.2 0.02 I D = –2 A –1 A –0.5 A V GS = –2.5 V –2 A, –1 A, –0.5 A –4 V 0 40 80 120 160 Case Temperature Tc (°C) –10 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance R DS(on) ( Ω) –6 –2 –4 Gate to Source Voltage Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 0.3 0.5 0.05 –0.1 0 Drain to Source On State Resistance R DS(on) ( Ω ) Drain to Source Saturation Voltage vs. Gate to Source Voltage 20 10 5 Tc = –25 °C 25 °C 2 75 °C 1 0.5 0.2 –0.1 –0.2 V DS = –10 V Pulse Test –0.5 –1 –2 –5 Drain Current I D (A) –10 HAT3001F(P channele) Typical Capacitance vs. Drain to Source Voltage 1000 10000 500 3000 Capacitance C (pF) Reverse Recovery Time trr (ns) Body–Drain Diode Reverse Recovery Time 200 100 50 20 V DD = –25 V –10 V –5 V –40 –50 I D = –2.5 A 0 4 8 12 16 Gate Charge Qg (nc) –4 –6 –8 –10 20 Switching Time t (ns) –30 –2 V DS Crss 500 V GS (V) 0 V GS 100 VGS = 0 f = 1 MHz –10 –20 –30 –40 –50 Drain to Source Voltage V DS (V) Gate to Source Voltage V DS (V) Drain to Source Voltage –20 Coss 0 Dynamic Input Characteristics –10 300 10 10 –0.1 –0.2 –0.5 –1 –2 –5 –10 Reverse Drain Current I DR (A) V DD = –5 V –10 V –25 V Ciss 30 di / dt = 20 A / µs VGS = 0, Ta = 25 °C 0 1000 Switching Characteristics 200 t d(off) 100 tf 50 tr 20 10 5 –0.1 –0.2 t d(on) V GS = –4 V, V DD = –10 V PW = 3 µs, duty < 1 % –0.5 –1 –2 –5 Drain Current I D (A) –10 HAT3001F(P channel) Reverse Drain Current vs. Source to Drain Voltage 10 Reverse Drain Current I DR (A) Pulse Test 8 6 5V V GS = 0, –5 V 4 2 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 V SD (V) Package Dimensions Unit : mm • SOP–8 0.75 Max 6.8 Max + 0.05 4 0.20 – 0.02 1 2.03 Max 5 2.00 Max 8 4.55 Max 5.25 Max 0 – 10 ° 0.40 + 0.10 – 0.05 0.25 0.60 +– 0.18 0.10 ± 0.10 1.27 0.1 0.12 M FP–8D Hitachi Code SC–527–8A EIAJ — JEDEC