Transmissive Photosensors (Photo Interrupters) CNZ1021,CNZ1022,CNZ1023,CNA1009H (ON1021, ON1022, ON1023, ON1024) Photo Interrupters Features Position detection accuracy : 0.25 mm Overview CNZ1021 series is a transmissive photosensor series in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected. Unit : mm CNZ1021 Gap width : 3 mm (CNZ1021, CNZ1022, CNZ1023) 5 mm (CNA1009H) The type directly attached to PCB ........... CNZ1021 Screw-fastened type (both sides) ............. CNZ1022 Screw-fastened type (one side) ................ CNZ1023 The type directly attached to PCB ........ CNA1009H (with a positioning pins) Unit : mm CNZ1022 25.0 2-R1.5 19.0±0.15 ∑ 5.0 0.4±0.1 (2-0.45) 2 3.0±0.15 A (2.5) A' (2-0.45) (2.54) SEC. A-A' 1 1 4 (C1.2) A' (2-0.45) (7.6) 2 3 0.4±0.1 Device center 3 2 6.0 5.0 12.0 10.0 2.1±0.15 10.0 min. 2.5 10.0 Device center (7.6) 3.5 (C1.2) 10.0 min. 3.0 (2.5) 3.0±0.15 A ø3.0 +0.15 –0 0.5 2.5 2.1±0.15 12.0 3.0 +0.15 –0 ∑ 3 (2-C1.2) (2-0.45) (2.54) SEC. A-A' 2 1 4 1 CNZ1023 Unit : mm CNA1009H Unit : mm ∑ ∑ 18.0 12.0±0.15 5.0 3 4 (2-0.45) (2.54) SEC. A-A' 2 A' (2-0.45) 5.2±0.1 (2-0.45) 3.5 (10.0) 2 2 1 2.35±0.1 4 Pin connection 2-ø0.7±0.1 (2-0.45) (2.54) SEC. A-A' 3 3 1 (C1) 2.2±0.15 0.5 ø3.0 +0.15 –0 (7.6) (2.5) 6.0 2.1±0.15 2-R1.5 0.5±0.1 Device center 10.0 min. 2.5 2-0.7 (4-R2) A' 6.0 5.0 A 10.0 (C1.2) 0.4±0.1 Device center 10.0 min. 2.5 14.0 5.0±0.15 3.0 +0.15 –0 3.0±0.15 A 10.0 (2.5) 2.0 12.0 1 4 Pin connection Pin connection 2 3 4 3 4 6.6±0.1 1 4 Pin connection (Note) 1. Tolerance unless otherwise specified is ±0.3. 2. ( ) Dimension is reference. Note) The part numbers in the parenthesis show conventional part number. 1 Transmissive Photosensors (Photo Interrupters) CNZ1021,CNZ1022,CNZ1023,CNA1009H Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Unit VR 5 V IF 50 mA PD*1 75 mW IC 20 mA Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO 30 V 5 V Collector power dissipation PC*2 100 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –40 to +100 ˚C Collector current Temperature Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 1.33 mW/˚C at Ta ≥ 25˚C. *1 Electrical Characteristics (Ta = 25˚C) Parameter Symbol Conditions Forward voltage (DC) Input characteristics Reverse current (DC) VF IF = 20mA IR VR = 3V Output characteristics Collector cutoff current ICEO Collector current VCE = 10V IC typ max 1.25 1.4 V 10 µA 10 VCC = 5V, IF = 20mA, RL = 100Ω Transfer characteristics Collector to emitter saturation voltage VCE(sat) IF = 40mA, IC = 1mA Response time tr , tf* VCC = 5V, IC = 1mA, RL = 100Ω * min 0.5 200 nA 15 mA 0.4 5 Unit V µs Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 2 RL ;; ;; 50Ω 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector current to decrease from 90% to 10% of its initial value) CNZ1021,CNZ1022,CNZ1023,CNA1009H Transmissive Photosensors (Photo Interrupters) IF , IC — Ta IF — V F VF — Ta 1.6 60 Ta = 25˚C IF 30 IC VF (V) 30 20 0 20 40 60 80 0 100 0 Ambient temperature Ta (˚C ) IC — I F 0.4 0.8 1.2 1.6 1mA 0.8 0.4 0 – 40 – 20 2.4 10 –1 10 –1 1 40 0 20 60 80 Ambient temperature Ta (˚C ) 100 Sig. OUT RL tr ; ;; Sig. OUT 50Ω 10 –2 10 –1 1 td 90% 10% IC (%) VCC 10 –1 80 Relative output current 1 Sig.IN 100 VCE = 5V Ta = 25˚C IF = 20mA 100Ω 10 –1 80 IC — d tr (µs) Rise time 1 60 100 RL = 1kΩ 500Ω 10 40 Ambient temperature Ta (˚C ) VCC = 5V Ta = 25˚C 10 2 40 80 tr — IC VCE = 10V 20 120 0 – 40 – 20 10 2 10 10 2 0 IC (%) 10mA 1 ICEO — Ta 10 100 VCE = 5V IF = 20mA Collector to emitter voltage VCE (V) 10 3 80 20mA Forward current IF (mA) 10 –2 – 40 – 20 60 IC — Ta IF = 30mA 10 10 –2 10 –1 10 2 10 40 160 Relative output current IC (mA) 1 1 20 Ta = 25˚C 10 10 –2 10 –1 0 Ambient temperature Ta (˚C ) IC — VCE Collector current IC (mA) Collector current 2.0 10 2 VCE = 5V Ta = 25˚C ICEO (nA) 10mA Forward voltage VF (V) 10 2 Dark current 1.2 10 10 0 – 25 40 Forward voltage 40 20 IF = 50mA 50 IF (mA) 50 Forward current Forward current, collector current IF , IC (mA) 60 60 Criterion 0 d 40 20 tf 10 Collector current IC (mA) 102 0 0 1 2 3 4 5 6 Distance d (mm) 3 Caution for Safety Gallium arsenide material (GaAs) is used in this product. 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