NEC 2SA675

DATA SHEET
SILICON TRANSISTOR
2SA675
PNP SILICON EPITAXIAL TRANSISTOR
FOR DRIVING FLUORESCENT INDICATOR PANNEL
The 2SA675 is a resin sealed mold transistor and is ideal for
PACKAGE DRAWING (UNIT: mm)
dynamic drivers of counting indicator pannel such as fluorescent
indicator pannel due to high voltage.
• High voltage
VCBO > −80 V, VCER > −80 V
• Excellent linearity for current of DC current gain
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
Parameter
Symbol
Ratings
Unit
VCBO
−80
V
VCER *
−80
V
VEBO
−5.0
V
Collector current
IC
−100
mA
Total power dissipation
PT
250
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
* RBE = 30 kΩ
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Collector cutoff current
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
−1.0
µA
−1.0
µA
ICBO
VCB = –60 V, IE = 0
Emitter cutoff current
IEBO
VEB = –3.0 V, IC = 0
DC current gain
hFE1
VCE = –3.0 V, IC = –1.0 mA
60
120
DC current gain
hFE2
VCE = –3.0 V, IC = –20 mA
50
120
300
Collector saturation voltage
VCE(sat)
IC = –20 mA, IB = –1.0 mA
−0.10
−1.50
V
Base saturation voltage
VBE(sat)
IC = –20 mA, IB = –1.0 mA
−0.74
−1.20
V
Gain bandwidth product
fT
VCE = –6.0 V, IE = 10 mA
100
170
MHz
Output capacitance
Cob
VCB = –10 V, IE = 0, f = 1.0 MHz
4.5
10
pF
Storage time
tstg
Refer to the test circuit.
0.5
1.0
µs
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16146EJ3V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
2SA675
hFE CLASSIFICATION
Marking
L
K
U
hFE2
50 to 125
80 to 200
120 to 300
TYPICAL CHARACTERISTICS (Ta = 25°°C)
2
Data Sheet D16146EJ3V0DS
2SA675
SWITCHING TIME TEST CIRCUIT
oscillo scope
Data Sheet D16146EJ3V0DS
3
2SA675
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M8E 00. 4