DATA SHEET SILICON TRANSISTORS 2SC2958, 2959 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES PACKAGE DRAWING (UNIT: mm) • Ideal for use of high voltage current such as TV vertical deflection (drive and output), audio output, pin cushion correction • Complementary transistor with 2SA1221 and 2SA1222 VCEO = 140 V: 2SA1221/2SC2958 VCEO = 160 V: 2SA1222/2SC2959 ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 160 V Collector to emitter voltage VCEO 140/160 V Emitter to base voltage VEBO 5.0 V Collector current (DC) IC(DC) 500 mA Collector current (pulse) IC(pulse)* 1.0 A Total power dissipation PT 1.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C * PW ≤ 10 ms, duty cycle ≤ 50% ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Collector cutoff current ICBO VCB = 100 V, IE = 0 200 nA Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 200 nA DC current gain hFE ** VCE = 2.0 V, IC = 100 mA 100 150 400 DC base voltage VBE ** VCE = 5.0 V, IC = 20 mA 0.6 0.64 0.7 V Collector saturation voltage VCE(sat) ** IC = 1.0 A, IB = 0.2 A 0.32 0.7 V Base saturation voltage VBE(sat) ** IC = 1.0 A, IB = 0.2 A 1.1 1.3 V 13 30 Output capacitance Gain bandwidth product Cob fT VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 10 V, IE = −20 mA 30 pF 60 MHz ** Pulse test PW ≤ 350 µs, duty cycle ≤ 2% per pulsed The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16150EJ1V0DS00 Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SC2958, 2959 hFE CLASSIFICATION Marking M L K hFE 100 to 200 160 to 320 200 to 400 TYPICAL CHARACTERISTICS (Ta = 25°°C) 2 Data Sheet D16150EJ1V0DS 2SC2958, 2959 Data Sheet D16150EJ1V0DS 3 2SC2958, 2959 • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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