DATA SHEET SILICON TRANSISTOR 2SD2403 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2403 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING (UNIT: mm) This transistor is ideal for DC/DC converters and motor drivers. FEATURES • High current capacitance • Low collector saturation voltage • Complementary transistor with 2SB1572 ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Conditions Ratings Unit Collector to base voltage VCBO 80 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 6.0 V Collector current (DC) IC(DC) 3.0 A Collector current (pulse) IC(pulse) 5.0 A Base current (DC) IB(DC) 0.2 A Base current (pulse) IB(pulse) PW ≤ 10 ms duty cycle ≤ 50 % 0.4 A 16 cm2 × 0.7 mm ceramic board mounted 2.0 W PW ≤ 10 ms duty cycle ≤ 50 % Total power dissipation PT Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16156EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SD2403 ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Conditions TYP. MAX. Unit Collector cutoff current I&%2 V&% = 80 V, I( = 0 100 nA Emitter cutoff current I(%2 V(% = 6.0 V, I& = 0 100 nA DC current gain h)( V&( = 2.0 V, I& = 0.1 A 80 DC current gain h)( V&( = 2.0 V, I& = 1.0 A 100 200 400 − DC base voltage V%( V&( = 2.0 V, I& = 0.1 A 630 670 730 mV − Collector saturation voltage V&(VDW I& = 2.0 A, I% = 0.1 A 150 300 mV Collector saturation voltage V&(VDW I& = 3.0 A, I% = 0.15 A 210 500 mV Base saturation voltage V%(VDW I& = 2.0 A, I% = 0.1 A 0.89 1.2 V Gain bandwidth product f7 V&( = 10 V, I( = −0.3 A 130 MHz Output capacitance CRE V&% = 10 V, I( = 0, f = 1 MHz 30 pF Turn-on time tRQ 150 ns Storage time tVWJ I& = 1.0 A, V&&= 10 V I% = −I% = 0.1 A R/ = 5.0 Ω 652 ns 40 ns Fall time tI hFE CLASSIFICATION 2 MIN. Marking GX GY GZ h)( 100 to 200 160 to 320 200 to 400 Data Sheet D16156EJ2V0DS 2SD2403 TYPICAL CHARACTERISTICS (Ta = 25°°C) Data Sheet D16156EJ2V0DS 3 2SD2403 4 Data Sheet D16156EJ2V0DS 2SD2403 [MEMO] Data Sheet D16156EJ2V0DS 5 2SD2403 • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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