HITACHI 2SC4913

2SC4913
Silicon NPN Triple Diffused
Application
High voltage amplifier
Features
• High breakdown voltage
• V(BR)CEO = 2000 V min
Outline
TO-220AB
1
2 3
1. Base
2. Collector
(Flange)
3. Emitter
2SC4913
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
2000
V
Collector to emitter voltage
VCEO
2000
V
Emitter to base voltage
VEBO
6
V
Collector current
IC
20
mA
Collector peak current
I C(peak)
40
mA
Collector power dissipation
PC
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector cutoff current
I CES
—
—
500
µA
VCE = 2000 V, RBE = 0
Collector cutoff current
I CEO
—
—
5
mA
VCE = 2000 V, RBE = ∞
Emitter cutoff current
I EBO
—
—
500
µA
VEB = 6 V, IC = 0
DC current transfer ratio
hFE
10
—
—
Collector to emitter saturation
voltage
VCE(sat)
—
—
5.0
Maximum Collector Power Dissipation Curve
Area of Safe Operation
I C (mA)
1 shot pulse
1.5
Collector Current
Collector Power Dissipation Pc (W)
I C = 10 mA, IB = 2 mA
1.0
0.5
50
100
150
200
Ambient Temperature Ta (°C)
50
ic(peak)
20
I C max
10
0.5
Ta = 25°C
ms
=1
on
Pw ms
ati
er )
10
Op 25°C
DC c =
(T
2
V
100
2.0
0
VCE = 5 V, IC = 1 mA
0.2
0.1
100 200
500 1000 2000
5000
Collector to Emitter Voltage VCE (V)
2SC4913
DC Current Transfer Ratio
vs. Collector Current
Typical Output Characteristics
100
10
DC Current Transfer Ratio h FE
Collector Current
I C (mA)
A
1m
mA
0.8
A
0.6 m
A
0.4 m
5
0.2 mA
IB= 0
0
5
10
Collector to Emitter Voltage VCE (V)
50
Tc = 75°C
25°C
20
10
–25°C
5
2
VCE = 5 V
1
0.1 0.2
0.5 1
2
Collector Current
10
10
I C/ I B = 5
Base to Emitter Saturation Voltage
V BE(sat) (V)
Collector to Emitter Saturation Voltage
V CE(sat) (V)
20
Base to Emitter Saturation Voltage
vs. Collector Current
Collector to Emitter Saturation Voltage
vs. Collector Current
5
2
1 Tc = 75°C
0.5
5 10
I C (mA)
25°C
–25°C
0.2
0.1
0.1 0.2
0.5 1
2
Collector Current
5 10
I C (mA)
20
I C / IB = 5
5
2
–25°C
1
25°C
0.5
Tc = 75°C
0.2
0.1
0.2
0.5 1
2
Collector Current
5 10
I C (mA)
20
3
2SC4913
Collector Current vs. Base to Emitter Voltage
20
I C (mA)
Collector Current
VCE = 5 V
10
2
5
Tc = 75°C
–25°C
25°C
1
0.5
0.2
0.1
0
4
0.2
0.4 0.6
0.8 1.0 1.2
Base to Emitter Voltage V BE (V)
Unit: mm
11.5 MAX
2.79 ± 0.2
10.16 ± 0.2
9.5
φ 3.6 -0.08
+0.1
1.26 ± 0.15
15.0 ± 0.3
6.4
18.5 ± 0.5
1.27
+0.2
–0.1
8.0
4.44 ± 0.2
7.8 ± 0.5
1.5 MAX
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
14.0 ± 0.5
2.7 MAX
0.5 ± 0.1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-220AB
Conforms
Conforms
1.8 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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