BS107 N–CHANNEL ENHANCEMENT MODE TRANSISTOR Features · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets E A TO-92 B C Mechanical Data · · · · Case: TO-92 Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connections: See Diagram Weight: 0.18 grams (approx.) Maximum Ratings D SG D BOTTOM VIEW H Min Max A 4.45 4.70 B 4.46 4.70 C 12.7 — D 0.41 0.63 E 3.43 3.68 G 2.42 2.67 H 1.14 1.40 All Dimensions in mm H G Dim @ TA = 25°C unless otherwise specified Symbol Value Unit Drain-Source-Voltage Characteristic VDSS 200 V Drain-Gate-Voltage VDGS 200 V Gate-Source-Voltage (pulsed) (Note 2) VGS ±20 V Drain-Current (continuous) ID 120 mA Power Dissipation @TC = 25°C (Note 1) Pd 830 mW Tj, TSTG -55 to +150 °C Operating and Storage Temperature Range Inverse Diode @ TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Maximum Forward Current (continuous) IF 0.5 A Forward Voltage Drop (typical) @ VGS = 0, IF = 0.5A, Tj = 25°C VF 0.85 V Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit V(BR)DSS 200 230 — V ID = 100µA, VGS = 0 IGSS — — 10 nA VGS = 15V, VDS = 0 IDSS IDSX — — 30 1.0 nA µA VDS =130V, VGS = 0 VDS = 70V, VGS = 0.2V Gate-Source Threshold Voltage VGS(th) — 1.8 3 V VGS = VDS, ID = 1.0mA Drain-Source ON Resistance rDS(ON) — 18 28 W VGS = 2.8V, ID = 20 mA Thermal Resistance, Junction to Ambient Air RqJA — — 150 K/W Input Capacitance Output Capacitance Feedback Capacitance Ciss Coss Crss — 58 8.0 1.5 — pF VDS = 20V, VGS = 0,f =1.0MHz ton toff — 5.0 15 — ns VGS = 10V, VDS = 10V, RD = 100W Drain-Source Breakdown Voltage Gate-Body Leakage Current Drain-Cutoff Current Turn On Time Turn Off Time Notes: Test Condition (Note 1) 1. Valid provided that leads are kept at ambient temperature at a distance of 2.0mm from case. 2. Pulse Test: Pulse width = 80µs, duty factor = 1%. DA21804 Rev. C-3 1 of 2 BS107 500 0.8 ID (ON), DRAIN ON-CURRENT (mA) Pd, POWER DISSIPATION (W) 1 (See Note 1) 0.6 0.4 0.2 See Note 2 TA = 25°C 400 VGS = 4.0V 300 3.5 200 3.0 100 2.5 2.0 0 0 0 100 0 200 1.0 TA = 25°C (See Note 2) 60 40 80 100 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2. Output Characteristics TA, AMBIENT TEMPERATURE (ºC) Fig. 1. Power Derating Curve 500 20 VDS = 25V (See Note 2) 400 0.8 ID, DRAIN CURRENT (A) ID(ON), DRAIN ON-CURRENT (mA) TA = 25°C VGS = 4V 300 3.5V 200 3V 100 0.6 0.4 0.2 2.5V 2V 0 0 2 4 6 8 0 0 10 gf s, FORWARD TRANSCONDUCTANCE (mm) gfs, FORWARD TRANSCONDUCTANCE (mm) VDS = 25V See Note 2 400 300 200 100 0 0 1 2 3 4 5 4 500 (See Note 2) VDS = 25V 400 300 200 100 0 5 0 VGS, GATE-SOURCE VOLTAGE (VOLTS) Fig. 5. Transconductance vs Gate-Source Voltage DA21804 Rev. C-3 3 2 VGS, GATE-SOURCE VOLTAGE (V) Fig. 4. Drain Current vs Gate-Source Voltage VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 3. Saturation Characteristics 500 1 100 200 ID, DRAIN CURRENT (mA) Fig. 6. Transconductance vs. Drain Current 2 of 2 BS107