2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V(BR)DSS Min (V) rDS(on) Max () VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 to 3 0.5 VQ1000J 60 ID (A) Features Benefits Applications Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Battery Operated Systems Solid-State Relays Low On-Resistance: 2.5 Low Threshold: 2.1 V Low Input Capacitance: 22 pF Fast Switching Speed: 7 ns Low Input and Output Leakage Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage TO-226AA (TO-92) S TO-236 (SOT-23) 1 G G 1 3 2 S D D 2 3 Top View Top View 2N7002 (72)* 2N7000 *Marking Code for TO-236 Dual-In-Line N N D1 1 14 D4 S1 2 13 S4 G1 3 12 G4 NC 4 11 NC G2 5 10 G3 S2 6 9 S3 D2 7 8 D3 TO-92-18RM (TO-18 Lead Form) N D 1 G 2 S 3 N Top View Top View Plastic: VQ1000J Sidebraze: VQ1000P BS170 Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70226. Siliconix S-52429—Rev. E, 28-Apr-97 1 2N7000/7002, VQ1000J/P, BS170 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Total Quad Single Parameter Symbol 2N7000 2N7002 VQ1000J VQ1000P VDS 60 60 60 60 VGSM 40 40 30 VGS 20 20 20 20 20 0.2 0.115 0.225 0.225 0.5 0.13 0.073 0.14 0.14 0.175 0.5 0.8 1 1 0.4 0.2 1.3 1.3 2 0.16 0.08 0.52 0.52 0.8 312.5 625 96 96 62.5 Drain-Source Voltage Gate-Source Voltage—Non-Repetitive Gate-Source Voltage—Continuous Continuous Drain Current (TJ = 150_C) TA= 25_C ID TA= 100_C Pulsed Drain Currenta Power Dissipation IDM TA= 25_C PD TA= 100_C Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range RthJA TJ, Tstg VQ1000J/P BS170 Unit 60 25 0.83 156 V A W _C/W _C –55 to 150 Notes a. Pulse width limited by maximum junction temperature. b. tp 50 ms. Specificationsa for 2N7000 and 2N7002 Limits 2N7000 Parameter Symbol Test Conditions Typb Min Max 2N7002 Min Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Threshold V(BR)DSS VGS(th) VGS = 0 V, ID = 10 mA 70 60 VDS = VGS, ID = 1 mA 2.1 0.8 VDS = VGS, ID = 0.25 mA 2.0 IGSS IDSS 10 0 VDS = 0 V, VGS = 20 V Drain-Source On-Resistancec ID(on) D( ) rDS(on) 1000 VDS = 60 V, VGS = 0 V 1 0.35 VGS = 4.5 V, ID = 0.075 A 4.5 VGS = 5 V, ID = 0.05 A 3.2 TC = 125_C = 125_C Forward Transconductance c Common Source Output Conductancec gfs VDS = 10 V, ID = 0.2 A gos VDS = 5 V, ID = 0.05 A mA 500 VDS = 10 V, VGS = 4.5 V VDS = 7.5 V, VGS = 10 V VGS = 10 V, ID = 0.5 A nA 1 TC = 125_C TC = 125_C On State Drain Currentc On-State 2.5 10 VDS = 48 V, VGS = 0 V Zero Gate Voltage Drain Current V 1 VDS = 0 V, VGS = 15 V Gate-Body Leakage 60 3 0.075 1 A 0.5 5.3 7.5 5.8 13.5 2.4 5 7.5 4.4 9 13.5 100 80 W mS 0.5 Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 2 VDS = 25 V V, VGS = 0 V f = 1 MHz 22 60 50 11 25 25 2 5 5 pF Siliconix S-52429—Rev. E, 28-Apr-97 2N7000/7002, VQ1000J/P, BS170 Specificationsa for 2N7000 and 2N7002 Limits 2N7000 2N7002 Symbol Test Conditions Typb Turn-On Time tON 7 10 Turn-Off Time tOFF VDD = 15 V, RL = 25 W ID ^0.5 ^0 5 A, A VGEN = 10 V RG = 25 W 7 10 VDD = 30 V, RL = 150 W ID ^ 0.2 0 2 A, A VGEN = 10 V RG = 25 W 7 20 11 20 Parameter Min Max Min Max Unit Switchinge Turn-On Time tON Turn-Off Time tOFF ns Notes a. TA = 25_C unless otherwise noted.d. b. For DESIGN AID ONLY, not subject to production testing. c. Pulse test: PW v80 ms duty cycle v1%. d. This parameter not registered with JEDEC. e. Switching time is essentially independent of operating temperature. VNBF06 Specificationsa for VQ1000J/P and BS170 Limits VQ1000J/P Parameter Typb Min Symbol Test Conditions V(BR)DSS VGS = 0 V, ID = 100 mA 70 60 VGS(th) VDS = VGS, ID = 1 mA 2.1 0.8 Max BS170 Min Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage VDS = 0 V, VGS = "10 V Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentc Drain Source On-Resistance Drain-Source On Resistancec IGSS IDSS ID(on) rDS(on) DS( ) gfs f Common Source Output Conductancec gos 2.5 0.8 3 TJ = 125_C "500 nA "10 VDS = 25 V, VGS = 0 V 0.5 VDS = 48 V, VGS = 0 V, TJ = 125_C 500 VDS = 60 V, VGS = 0 V 10 VDS = 10 V, VGS = 10 V VGS = 5 V, ID = 0.2 A 1 VGS = 10 V, ID = 0.2 A 2.3 VGS = 10 V, ID = 0.3 A 2.3 5.5 4.2 7.6 mA 0.5 4 A 7.5 5 VDS = 10 V, ID = 0.2 A W 100 VDS = 10 V, ID = 0.5 A VDS =5 V, ID = 0.05 A V "100 VDS = 0 V, VGS = "15 V TJ = 125_C Forward Transconductance c 60 100 mS 0.5 Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Siliconix S-52429—Rev. E, 28-Apr-97 25 V VDS =25 V, VGS = 0 V f = 1 MHz 22 60 11 25 2 5 60 pF 3 2N7000/7002, VQ1000J/P, BS170 Specificationsa for VQ1000J/P and BS170 Limits VQ1000J/P BS170 Symbol Test Conditions Typb Turn-On Time tON 7 10 Turn-Off Time tOFF VDD = 15 V, RL = 23 W ID ^ 0.6 0 6 A, A VGEN = 10 V RG = 25 W 7 10 VDD = 25 V, RL = 125 W ID ^ 0.2 0 2 A, A VGEN = 10 V RG = 25 W 7 10 7 10 Parameter Min Max Min Max Unit Switchingd Turn-On Time tON Turn-Off Time tOFF ns Notes a. TA = 25_C unless otherwise noted. b. For DESIGN AID ONLY, not subject to production testing. c. Pulse test: PW v80 ms duty cycle v1%. d. Switching time is essentially independent of operating temperature. VNBF06 Typical Characteristics (25_C Unless Otherwise Noted) Output Characteristics Transfer Characteristics 1.0 1.0 6.5 V VGS = 10, 9, 8, 7 V 5.5 V 0.6 5V 0.4 4.5 V 4V 0.2 0 0 1 2 3 4 3.5 V 3 V 2.5 V 2, 1 V 5 6 VDS – Drain-to-Source Voltage (V) 4 0.8 6V I D – Drain Current (A) I D – Drain Current (A) 0.8 TA = –55_C 25_C 0.6 125_C 0.4 0.2 0 0 1 2 3 4 5 6 7 8 VGS – Gate-to-Source Voltage (V) Siliconix S-52429—Rev. E, 28-Apr-97 2N7000/7002, VQ1000J/P, BS170 Typical Characteristics (25_C Unless Otherwise Noted) Capacitance On-Resistance vs. Drain Current 7 60 VGS = 0 V f = 1 MHz TJ = 25_C 50 rDS @ 5 V = VGS C – Capacitance (pF) rDS(on) – On-Resistance ( 6 5 4 3 rDS @ 10 V = VGS 2 40 30 Ciss 20 Coss 10 1 Crss 0 0 0 0.2 0.4 0.6 0.8 0 1.0 5 ID – Drain Current (A) 25 30 35 VDS = 30 V ID = 0.5 A 16 rDS(on) – On-Resistance ( (Normalized) VGS – Gate-to-Source Voltage (V) 20 On-Resistance vs. Junction Temperature 2.0 12 8 4 0 0 400 800 1200 1600 2000 VGS = 10 V, rDS @ 0.5 A 1.5 1.0 VGS = 5 V, rDS @ 0.05 A 0.5 0 –55 2400 –30 1.000 Source-Drain Diode Forward Voltage 20 45 70 95 120 145 On-Resistance vs. Gate-to-Source Voltage 6 rDS(on) – On-Resistance ( TJ = 125_C 0.100 TJ = 25_C 0.010 0.001 0 –5 TJ – Junction Temperature (_C) Qg – Total Gate Charge (pC) I S – Source Current (A) 15 VDS – Drain-to-Source Voltage (V) Gate Charge 20 10 5 rDS = 50 mA 4 500 mA 3 2 1 0 0.2 0.4 0.6 0.8 1.0 VSD – Source-to-Drain Voltage (V) Siliconix S-52429—Rev. E, 28-Apr-97 1.2 1.4 0 2 4 6 8 10 12 14 16 18 20 VGS – Gate-to-Source Voltage (V) 5 2N7000/7002, VQ1000J/P, BS170 Typical Characteristics (25_C Unless Otherwise Noted) Threshold Voltage 0.50 ID = 250 mA VGS(th) Variance (V) 0.25 –0.00 –0.25 –0.50 –0.75 –50 –25 0 25 50 75 100 125 150 TJ – Temperature (_C) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, BS170 Only) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = 0.01 t1 t2 2. Per Unit Base = RthJA = 156_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 0.1 1 10 100 1K 10 K t1 – Square Wave Pulse Duration (sec) 6 Siliconix S-52429—Rev. E, 28-Apr-97