STMICROELECTRONICS BUB931T

BU931T
BUB931T

HIGH VOLTAGE IGNITION COIL DRIVER
NPN POWER DARLINGTONS
■
■
■
■
VERY RUGGED BIPOLAR TECHNOLOGY
HIGH OPERATING JUNCTION
TEMPERATURE
WIDE RANGE OF PACKAGES
SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)
APPLICATIONS
■
HIGH RUGGEDNESS ELECTRONIC
IGNITIONS
1
2
3
3
1
TO-220
D2PAK
TO-263
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
V CES
Collector-Emitter Voltage (VBE = 0)
500
V
V CEO
Collector-Emitter Voltage (IB = 0)
400
V
V EBO
Emitter-Base Voltage (IC = 0)
IC
I CM
IB
I BM
5
V
Collector Current
10
A
Collector Peak Current
15
A
Base Current
1
A
Base Peak Current
5
A
o
P t ot
Total Dissipation at Tc = 25 C
T stg
Storage T emperature
Tj
Max. O perating Junction Temperature
January 1999
125
W
-65 to 175
o
C
175
o
C
1/7
BU931T / BUB931T
THERMAL DATA
R t hj-ca se
Thermal Resistance Junction-case
Max
o
1.2
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
I CES
I CEO
I EBO
Parameter
Test Cond ition s
Max.
Un it
o
100
0.5
µA
mA
o
100
0.5
µA
mA
20
mA
Collector Cut-off
Current (V BE = 0)
V CE = 500 V
V CE = 500 V
Tj = 125 C
Collector Cut-off
Current (I B = 0)
V CE = 450 V
V CE = 450 V
Tj = 125 C
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
V CEO( SUS) ∗ Collector-Emitter
Saturation Voltage
I C = 100 mA L = 10 mH I B = 0
V c la mp = RATED V CEO (See fig.4)
Min.
Typ .
400
V
V CE(sat )∗
Collector-Emitter
Saturation Voltage
IC = 7 A
IC = 8 A
I B = 70 mA
I B = 100 mA
1.6
1.8
V
V
V BE(s at)∗
Base-Emitt er
Saturation Voltage
IC = 7 A
IC = 8 A
I B = 70 mA
I B = 100 mA
2.2
2.4
V
V
DC Current Gain
IC = 5 A
2.5
V
h F E∗
VF
ts
tf
V CE = 10 V
Functional T est
(see fig. 1)
V CC = 24 V Vc la mp = 400 V L= 7 mH
INDUCTIVE LO AD
Storage Time
Fall Time
(see fig. 3)
V CC = 12 V Vc la mp = 300 V L= 7 mH
I C = 7 A I B = 70 mA
R BE = 47 Ω
V BE = 0
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
2/7
300
Diode F orward Voltage I F = 10 A
DC Current Gain
8
A
15
0.5
µs
µs
BU931T / BUB931T
Collector Emitter Saturation Voltage
Collector Emitter Saturation Voltage
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Base Emitter Saturation Voltage
Switching Time Inductive Load
3/7
BU931T / BUB931T
FIGURE 1: Functional Test Circuit
FIGURE 2: Functional Test Waveforms
FIGURE 3: Switching Time Test Circuit
FIGURE 4: Sustaining Voltage Test Circuit
4/7
BU931T / BUB931T
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
MAX.
MIN.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
TYP.
inch
1.27
TYP.
MAX.
0.107
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
L2
16.4
0.409
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
5/7
BU931T / BUB931T
TO-263 (D2PAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.21
1.36
0.047
0.053
D
8.95
9.35
0.352
0.368
E
10
10.4
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
D
C2
A2
A
C
DETAIL ”A”
DETAIL”A”
A1
B2
E
B
G
L2
L
L3
P011P6/E
6/7
BU931T / BUB931T
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
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