GF4126 N-Channel Enhancement-Mode MOSFET H C N TREENFET G Low VGS(th) VDS 20V RDS(ON) 30mΩ ID 7.2A ® SO-8 0.197 (5.00) 0.189 (4.80) t c u rod P New 5 8 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) Dimensions in inches and (millimeters) 4 1 0.020 (0.51) 0.013 (0.33) 0.050 (1.27) 0.05 (1.27) 0.04 (1.02) 0.019 (0.48) x 45 ° 0.010 (0.25) 0.009 (0.23) 0.007 (0.18) 0.035 (0.889) 0.025 (0.635) 0.069 (1.75) 0.053 (1.35) 0.009 (0.23) 0.004 (0.10) 0.165 (4.19) 0.155 (3.94) 0.245 (6.22) Min. 0 °– 8 ° 0.050 typ. (1.27) Mounting Pad Layout 0.050(1.27) 0.016 (0.41) Mechanical Data Features Case: SO-8 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position: Any Weight: 0.5g • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Fast Switching • Logic Level • Ideal for DC/DC converters Maximum Ratings and Thermal Characteristics (T Parameter A = 25°C unless otherwise noted) Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 ID 7.2 IDM 20 PD 2.5 1.6 W TJ, Tstg –55 to 150 °C RθJA 50 °C/W Continuous Drain Current at TJ = 150°C(1), TA = 25°C Pulsed Drain Current Maximum Power Dissipation(1) TA = 25°C TA = 70°C Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient(1) Thermal Resistance Unit V A 7/10/01 GF4126 N-Channel Enhancement-Mode MOSFET Electrical Characteristics (T J Parameter = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 20 – – V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 0.6 – – V Gate-Body Leakage IGSS VDS = 0V, VGS = ± 8V – – ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V – – 1.0 µA ID(on) VDS ≥ 5V, VGS = 4.5V 20 – – A VGS = 4.5V, ID = 7.2A – 22 30 VGS = 2.5V, ID = 6.2A – 28 40 VDS = 10V, ID = 7.2A – 24 – – 13 20 – 2.3 – – 3 – – 11 22 – 15 30 – 43 65 – 22 35 Static On-State Drain Current(2) Drain-Source On-State Resistance(2) RDS(on) Forward Transconductance(2) gfs mΩ S Dynamic Total Gate Charge Qg Gate-Source Charge VDS = 10V, VGS = 4.5V Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time ID = 7.2A VDD = 10V, RL = 10Ω tr Turn-Off Delay Time ID ≈ 1A, VGEN = 4.5V td(off) Fall Time RG = 6Ω tf nC ns Input Capacitance Ciss VGS = 0V – 1240 – Output Capacitance Coss VDS = 10V – 200 – Reverse Transfer Capacitance Crss f = 1.0MHZ – 120 – IS — – – 1.7 A VSD IS = 1.7A, VGS = 0V – 0.7 1.3 V pF Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage(2) Notes: (1) Surface mounted on FR4 board, t ≤ 10 sec. (2) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% VDD ton Switching Test Circuit RD VIN VOUT D Switching Waveforms td(on) RG tr td(off) tf 90 % 90% Output, VOUT VGEN toff 10% 10% INVERTED DUT G 90% 50% S Input, VIN 50% 10% PULSE WIDTH GF4126 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics 4.5V 3.5V 20 VGS = 2.5V VDS = 10V 3.0V 2.0V 16 16 ID -- Drain Current (A) ID -- Drain Source Current (A) 20 12 8 1.5V 4 TJ = 125°C --55°C 25°C 0 0 0.5 1 1.5 2 2.5 3.0 3.5 0 0.5 1 1.5 2 2.5 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) Fig. 3 – Threshold Voltage vs. Temperature Fig. 4 – On-Resistance vs. Drain Current 1 3 0.04 ID = 250µA 0.9 RDS(ON) -- On-Resistance (Ω) VGS(th) -- Gate-to-Source Threshold Voltage (V) 8 4 0 0.8 0.7 0.6 0.5 0.4 0.3 --25 0 25 50 75 100 125 150 VGS = 2.5V 0.03 0.025 4.5V 0.02 0.015 Fig. 5 – On-Resistance vs. Junction Temperature 1.6 VGS = 4.5V ID = 7.2A 1.4 1.2 1 0.8 0.6 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 0 4 8 12 ID -- Drain Current (A) TJ -- Junction Temperature (°C) --50 0.035 0.01 0.2 --50 RDS(ON) -- On-Resistance (Normalized) 12 125 150 16 20 GF4126 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 6 – On-Resistance vs. Gate-to-Source Voltage Fig. 7 – Gate Charge 5 0.08 VGS -- Gate-to-Source Voltage (V) RDS(ON) -- On-Resistance (Ω) ID = 7.2A 0.06 0.04 TJ = 125°C 0.02 25°C 0 VDS = 10V ID = 7.2A 4 3 2 1 0 1 2 3 4 5 0 2 4 6 8 10 12 14 VGS -- Gate-to-Source Voltage (V) Qg -- Gate Charge (nC) Fig. 8 – Capacitance Fig. 9 – Source-Drain Diode Forward Voltage 16 100 1800 f = 1MHZ VGS = 0V VGS = 0V Ciss IS -- Source Current (A) C -- Capacitance (pF) 1500 1200 900 600 TJ = 125°C 1 25°C --55°C 0.1 Coss 300 0 10 Crss 0 4 0.01 8 12 16 VDS -- Drain-to-Source Voltage (V) 20 0 0.2 0.4 0.6 0.8 1 VSD -- Source-to-Drain Voltage (V) 1.2 1.4 GF4126 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 11 – Transient Thermal Impedance Fig. 10 – Breakdown Voltage vs. Junction Temperature 31 30 29 28 27 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (°C) Fig. 12 – Power vs. Pulse Duration Fig. 13 – Maximum Safe Operating Area 100 70 60 100µs ID -- Drain Current (A) BVDSS -- Drain-to-Source Breakdown Voltage (V) ID = 250µA 50 40 30 20 10 ms 0m 1s RDS(ON) Limit 1ms s 1 10s 0.1 10 0 10 10 DC VGS = 10V Single Pulse on 1-in2 2oz Cu. TA = 25°C 0.01 0.01 0.1 1 10 100 0.1 1 10 VDS -- Drain-Source Voltage (V) 100