HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet December 2001 35A, 1200V, NPT Series N-Channel IGBT Features The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. • 35A, 1200V, TC = 25oC The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49290. Ordering Information PART NUMBER • 1200V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Avalanche Rated • Thermal Impedance SPICE Model Temperature Compensating SABER™ Model www.fairchildsemi.com • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards Packaging PACKAGE BRAND HGTG10N120BN TO-247 G10N120BN HGTP10N120BN TO-220AB 10N120BN HGT1S10N120BNS TO-263AB 10N120BN JEDEC STYLE TO-247 E C COLLECTOR (FLANGE) G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, e.g. HGT1S10N120BNS9A. Symbol C JEDEC TO-220AB (ALTERNATE VERSION) G COLLECTOR (FLANGE) E C G E JEDEC TO-263AB COLLECTOR (FLANGE) G E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 ©2001 Fairchild Semiconductor Corporation 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG10N120BN HGTP10N120BN HGT1S10N120BNS UNITS 1200 V At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 35 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 17 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 80 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 55A at 1200V Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 298 W Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.38 W/oC Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV 80 mJ Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 oC oC Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 8 µs Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 15 µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. ICE = 20A, L = 400µH, TJ = 25oC. 3. VCE(PK) = 840V, TJ = 125oC, RG = 10Ω. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 1200 - - V Emitter to Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 15 - - V TC = 25oC - - 250 µA TC = 125oC - 150 - µA TC = 150oC - - 2 mA TC = 25oC - 2.45 2.7 V TC = 150oC - 3.7 4.2 V 6.0 6.8 - V - - ±250 nA 55 - - A - 10.4 - V VGE = 15V - 100 120 nC VGE = 20V - 130 150 nC Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current ICES VCE(SAT) VGE(TH) IGES VCE = 1200V IC = 10A, VGE = 15V IC = 90µA, VCE = VGE VGE = ±20V Switching SOA SSOA TJ = 150oC, RG = 10Ω, VGE = 15V, L = 400µH, VCE(PK) = 1200V Gate to Emitter Plateau Voltage VGEP IC = 10A, VCE = 600V On-State Gate Charge ©2001 Fairchild Semiconductor Corporation QG(ON) IC = 10A, VCE = 600V HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI TEST CONDITIONS IGBT and Diode at TJ = 25oC ICE = 10A VCE = 960V VGE = 15V RG = 10Ω L = 2mH Test Circuit (Figure 18) MIN TYP MAX UNITS - 23 26 ns - 11 15 ns - 165 210 ns - 100 140 ns Turn-On Energy (Note 5) EON1 - 0.32 0.4 mJ Turn-On Energy (Note 5) EON2 - 0.85 1.1 mJ Turn-Off Energy (Note 4) EOFF - 0.8 1.0 mJ Current Turn-On Delay Time td(ON)I - 21 25 ns - 11 15 ns - 190 250 ns - 140 200 ns Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI IGBT and Diode at TJ = 150oC ICE = 10A VCE = 960V VGE = 15V RG = 10Ω L = 2mH Test Circuit (Figure 18) Turn-On Energy (Note 5) EON1 - 0.4 0.5 mJ Turn-On Energy (Note 5) EON2 - 1.75 2.3 mJ Turn-Off Energy (Note 4) EOFF - 1.1 1.4 mJ 0.42 oC/W Thermal Resistance Junction To Case RθJC - - NOTES: 4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18. Unless Otherwise Specified ICE , DC COLLECTOR CURRENT (A) 35 VGE = 15V 30 25 20 15 10 5 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE ©2001 Fairchild Semiconductor Corporation 150 ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 60 50 TJ = 150oC, RG = 10Ω, VGE = 15V, L = 400µH 40 30 20 10 0 0 200 400 600 800 1000 1200 1400 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS TJ = 150oC, RG = 10Ω, L = 2mH, V CE = 960V 100 50 TC = 75oC, VGE = 15V, IDEAL DIODE 10 1 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.42oC/W, SEE NOTES 2 TC 75oC 75oC 110oC 110oC 5 VGE 15V 12V 15V 12V 10 20 25 200 20 tSC 150 10 100 5 12 40 30 TC = 25oC 20 TC = 150oC 10 6 4 8 10 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) DUTY CYCLE <0.5%, VGE = 12V PULSE DURATION = 250µs 2 50 16 50 TC = 25oC 40 30 TC = 150oC 20 10 DUTY CYCLE <0.5%, VGE = 15V PULSE DURATION = 250µs 0 0 2 4 6 8 10 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 2.0 5 RG = 10Ω, L = 2mH, V CE = 960V EOFF, TURN-OFF ENERGY LOSS (mJ) EON2 , TURN-ON ENERGY LOSS (mJ) 15 TC = -55oC VCE , COLLECTOR TO EMITTER VOLTAGE (V) 4 TJ = 150oC, VGE = 12V, VGE = 15V 3 2 1 TJ = 25oC, VGE = 12V, VGE = 15V 0 14 FIGURE 4. SHORT CIRCUIT WITHSTAND TIME 50 0 13 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 0 ISC 15 ICE, COLLECTOR TO EMITTER CURRENT (A) TC = -55oC 250 VCE = 840V, RG = 10Ω, TJ = 125oC ISC, PEAK SHORT CIRCUIT CURRENT (A) Unless Otherwise Specified (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (µs) fMAX, OPERATING FREQUENCY (kHz) Typical Performance Curves 0 5 10 15 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT ©2001 Fairchild Semiconductor Corporation 20 RG = 10Ω, L = 2mH, VCE = 960V 1.5 TJ = 150oC, VGE = 12V OR 15V 1.0 TJ = 25oC, VGE = 12V OR 15V 0.5 0 0 5 10 15 20 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Typical Performance Curves Unless Otherwise Specified (Continued) 40 50 RG = 10Ω, L = 2mH, VCE = 960V TJ = 25oC, TJ = 150oC, VGE = 12V 35 40 trI , RISE TIME (ns) tdI , TURN-ON DELAY TIME (ns) RG = 10Ω, L = 2mH, VCE = 960V 30 25 20 TJ = 25oC, TJ = 150oC, VGE = 12V 30 20 10 TJ = 25oC OR TJ = 150oC, VGE = 15V TJ = 25oC, TJ = 150oC, VGE = 15V 15 5 0 15 10 0 20 0 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 15 20 300 RG = 10Ω, L = 2mH, V CE = 960V RG = 10Ω, L = 2mH, VCE = 960V 350 250 tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 10 FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 400 VGE = 12V, VGE = 15V, TJ = 150oC 300 250 200 200 TJ = 150oC, VGE = 12V OR 15V 150 100 150 VGE = 12V, VGE = 15V, TJ = 25oC 100 TJ = 25oC, VGE = 12V OR 15V 50 0 10 5 0 20 15 ICE , COLLECTOR TO EMITTER CURRENT (A) 20 VGE , GATE TO EMITTER VOLTAGE (V) DUTY CYCLE <0.5%, VCE = 20V PULSE DURATION = 250µs 80 60 TC = 25oC 20 TC = 150oC TC = -55oC 0 7 8 9 10 11 12 13 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 13. TRANSFER CHARACTERISTIC ©2001 Fairchild Semiconductor Corporation 14 10 15 20 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT 100 40 5 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT ICE, COLLECTOR TO EMITTER CURRENT (A) 5 ICE , COLLECTOR TO EMITTER CURRENT (A) 15 IG (REF) = 1mA, RL = 60Ω, TC = 25oC 15 VCE = 1200V VCE = 800V 10 VCE = 400V 5 0 0 20 40 60 80 100 120 QG , GATE CHARGE (nC) FIGURE 14. GATE CHARGE WAVEFORMS HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Unless Otherwise Specified (Continued) 4 C, CAPACITANCE (nF) FREQUENCY = 1MHz 3 CIES 2 1 COES 0 CRES 0 5 10 15 20 25 ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 15 DUTY CYCLE <0.5%, TC = 110oC PULSE DURATION = 250µs 12 VGE = 15V 9 VGE = 10V 6 3 0 0 1 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 4 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ZθJC , NORMALIZED THERMAL RESPONSE 3 2 FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE 100 0.5 0.2 0.1 10-1 0.05 t1 0.02 DUTY FACTOR, D = t1 / t2 0.01 PEAK TJ = (PD X ZθJC X RθJC) + TC SINGLE PULSE 10-2 10-5 PD 10-4 10-3 10-2 t2 10-1 100 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms HGTG10N120BND 90% 10% VGE EON2 EOFF L = 2mH VCE RG = 10Ω 90% + - ICE VDD = 960V 10% td(OFF)I tfI trI td(ON)I FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation FIGURE 19. SWITCHING TEST WAVEFORMS HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ©2001 Fairchild Semiconductor Corporation fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (P C) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 19. E ON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B