HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. The IGBT used is the development type TA49335. The diode used in anti-parallel is the development type TA49371. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Features • >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A • 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC • Low Conduction Loss • Temperature Compensating SABER™ Model www.fairchildsermi.com • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards Packaging JEDEC TO-220AB ALTERNATE VERSION Formerly Developmental Type TA49337. COLLECTOR (FLANGE) Ordering Information PART NUMBER PACKAGE BRAND HGTG12N60A4D TO-247 12N60A4D HGTP12N60A4D TO-220AB 12N60A4D HGT1S12N60A4DS TO-263AB 12N60A4D E G C JEDEC TO-263AB NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, e.g. HGT1S12N60A4DS9A. COLLECTOR (FLANGE) G Symbol E C JEDEC STYLE TO-247 E G C G E COLLECTOR (FLANGE) Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ©2001 Fairchild Semiconductor Corporation HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS UNITS 600 V Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 54 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 23 A 96 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA 60A at 600V Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167 W 1.33 W/oC Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. Electrical Specifications TJ = 25oC, Unless Otherwise Specified PARAMETER Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage SYMBOL BVCES ICES VCE(SAT) VGE(TH) IGES TEST CONDITIONS MIN TYP MAX UNITS 600 - - V - - 250 µA - - 2.0 mA - 2.0 2.7 V - 1.6 2.0 V IC = 250µA, VCE = 600V - 5.6 - V VGE = ±20V - - ±250 nA 60 - - A IC = 250µA, VGE = 0V VCE = 600V IC = 12A, VGE = 15V TJ = 25oC TJ = 125oC TJ = 25oC TJ = 125oC SSOA TJ = 150oC, RG = 10Ω, VGE = 15V, L = 100µH, VCE = 600V VGEP IC = 12A, VCE = 300V - 8 - V On-State Gate Charge Qg(ON) IC = 12A, VCE = 300V VGE = 15V - 78 96 nC VGE = 20V - 97 120 nC Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC, ICE = 12A, VCE = 390V, VGE = 15V, RG = 10Ω, L = 500µH, Test Circuit (Figure 24) - 17 - ns Current Rise Time Current Turn-Off Delay Time Current Fall Time trI td(OFF)I tfI - 8 - ns - 96 - ns - 18 - ns - 55 - µJ Turn-On Energy (Note 3) EON1 Turn-On Energy (Note 3) EON2 - 160 - µJ Turn-Off Energy (Note 2) EOFF - 50 - µJ Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time td(ON)I trI td(OFF)I tfI IGBT and Diode at TJ = 125oC, ICE = 12A, VCE = 390V, VGE = 15V, RG = 10Ω, - 17 - ns - 16 - ns - 110 170 ns L = 500µH, Test Circuit (Figure 24) - 70 95 ns Turn-On Energy (Note3) EON1 - 55 - µJ Turn-On Energy (Note 3) EON2 - 250 350 µJ Turn-Off Energy (Note 2) EOFF - 175 285 µJ ©2001 Fairchild Semiconductor Corporation HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Diode Forward Voltage VEC Diode Reverse Recovery Time trr Thermal Resistance Junction To Case RθJC TEST CONDITIONS MIN TYP MAX UNITS IEC = 12A - 2.2 - V IEC = 12A, dIEC/dt = 200A/µs - 30 - ns IEC = 1A, dIEC/dt = 200A/µs - 18 - ns IGBT - - 0.75 oC/W Diode - - 2.0 oC/W NOTES: 2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E ON1 is the turn-on loss of the IGBT only. E ON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 24. Unless Otherwise Specified VGE = 15V, 50 40 30 20 10 0 25 50 75 100 125 150 70 TJ = 150oC, RG = 10Ω, VGE = 15V, L = 200µH 60 50 40 30 20 10 0 0 TC , CASE TEMPERATURE (oC) 75oC VGE 15V fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.75oC/W, SEE NOTES 1 3 10 20 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT ©2001 Fairchild Semiconductor Corporation 30 tSC , SHORT CIRCUIT WITHSTAND TIME (µs) fMAX , OPERATING FREQUENCY (kHz) TC TJ = 125oC, RG = 10Ω, L = 500µH, V CE = 390V 10 300 400 500 600 700 FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA 500 100 200 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE 300 100 20 300 VCE = 390V, RG = 10Ω, TJ = 125oC 18 275 250 16 14 225 ISC 12 200 10 175 8 150 6 125 tSC 4 100 2 75 0 9 10 11 12 13 14 15 50 ISC, PEAK SHORT CIRCUIT CURRENT (A) ICE , DC COLLECTOR CURRENT (A) 60 ICE , COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 4. SHORT CIRCUIT WITHSTAND TIME HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Unless Otherwise Specified (Continued) 24 DUTY CYCLE < 0.5%, VGE = 12V PULSE DURATION = 250µs 20 16 TJ = 150oC 12 TJ = 125oC 8 4 0 TJ = 25oC 0 0.5 1.5 1.0 2 2.5 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 24 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250µs 20 16 TJ = 150oC 12 TJ = 125oC 8 TJ = 25oC 4 0 0 0.5 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE EOFF, TURN-OFF ENERGY LOSS (µJ) EON2 , TURN-ON ENERGY LOSS (µJ) 600 TJ = 125oC, VGE = 12V, VGE = 15V 400 300 200 0 TJ = 25oC, VGE = 12V, VGE = 15V 4 6 8 10 12 14 RG = 10Ω, L = 500µH, VCE = 390V 300 16 18 20 22 TJ = 125oC, VGE = 12V OR 15V 250 200 150 100 50 24 TJ = 25oC, VGE = 12V OR 15V 2 4 ICE , COLLECTOR TO EMITTER CURRENT (A) 6 8 10 12 14 16 18 20 22 24 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 18 32 RG = 10Ω, L = 500µH, VCE = 390V 17 RG = 10Ω, L = 500µH, VCE = 390V 28 16 TJ = 25oC, TJ = 125oC, VGE = 12V 15 14 13 12 TJ = 25oC, TJ = 125oC, VGE = 15V 11 trI , RISE TIME (ns) td(ON)I, TURN-ON DELAY TIME (ns) 2.5 350 0 2 2 400 RG = 10Ω, L = 500µH, VCE = 390V 100 1.5 FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 700 500 1.0 VCE , COLLECTOR TO EMITTER VOLTAGE (V) 24 TJ = 125oC OR TJ = 25oC, VGE = 12V 20 16 12 8 TJ = 25oC OR TJ = 125oC, VGE = 15V 4 10 2 4 6 8 10 12 14 16 18 20 22 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT ©2001 Fairchild Semiconductor Corporation 24 0 2 4 6 8 10 12 14 16 18 20 22 24 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Typical Performance Curves Unless Otherwise Specified (Continued) 90 RG = 10Ω, L = 500µH, VCE = 390V RG = 10Ω, L = 500µH, VCE = 390V 80 110 VGE = 12V, VGE = 15V, TJ = 125oC tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 115 105 100 95 VGE = 12V, VGE = 15V, TJ = 25oC TJ = 125oC, VGE = 12V OR 15V 60 50 40 30 90 85 70 TJ = 25oC, VGE = 12V OR 15V 20 10 2 4 6 8 10 12 14 16 18 20 22 24 2 4 6 ICE , COLLECTOR TO EMITTER CURRENT (A) VGE , GATE TO EMITTER VOLTAGE (V) ICE , COLLECTOR TO EMITTER CURRENT (A) 16 TJ = 25oC TJ = -55oC 150 TJ = 125oC 100 50 0 6 7 8 9 10 11 12 13 14 15 16 12 VCE = 600V 0.4 ICE = 12A 0.2 ICE = 6A 0 TC , CASE TEMPERATURE (oC) FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE ©2001 Fairchild Semiconductor Corporation 125 24 8 VCE = 200V 6 4 2 0 ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) 0.6 100 22 VCE = 400V 10 0 10 10 ICE = 24A 75 20 20 30 50 40 60 70 80 FIGURE 14. GATE CHARGE WAVEFORMS 0.8 50 18 QG , GATE CHARGE (nC) RG = 10Ω, L = 500µH, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF 25 16 IG(REF) = 1mA, RL = 25Ω, TC = 25oC FIGURE 13. TRANSFER CHARACTERISTIC 1.0 14 14 VGE , GATE TO EMITTER VOLTAGE (V) 1.2 12 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT DUTY CYCLE < 0.5%, VCE = 10V PULSE DURATION = 250µs 200 10 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 250 8 150 TJ = 125oC, L = 500µH, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF ICE = 24A 1 ICE = 12A ICE = 6A 0.1 5 10 100 1000 RG , GATE RESISTANCE (Ω) FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Unless Otherwise Specified (Continued) 3.0 C, CAPACITANCE (nF) FREQUENCY = 1MHz 2.5 2.0 CIES 1.5 1.0 COES 0.5 CRES 0 0 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Typical Performance Curves 2.4 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250µs, TJ = 25oC 2.3 2.2 ICE = 18A 2.1 ICE = 12A 2.0 ICE = 6A 1.9 8 9 10 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 15 16 90 DUTY CYCLE < 0.5%, PULSE DURATION = 250µs 12 dIEC/dt = 200A/µs 80 125oC 25oC trr , RECOVERY TIMES (ns) IEC , FORWARD CURRENT (A) 14 FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs GATE TO EMITTER VOLTAGE 14 10 8 6 4 2 125oC trr 70 125oC tb 60 50 40 125oC ta 30 25oC trr 20 25oC ta 10 0.5 0 1.0 1.5 0 2.5 2.0 25oC tb 1 2 3 4 VEC , FORWARD VOLTAGE (V) Qrr , REVERSE RECOVERY CHARGE (nc) 55 IEC = 12A, VCE = 390V 125oC tb 50 45 40 35 125oC ta 30 25 20 25oC ta 15 25oC tb 10 5 200 300 400 500 600 700 800 900 1000 diEC/dt, RATE OF CHANGE OF CURRENT (A/µs) FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF CURRENT ©2001 Fairchild Semiconductor Corporation 6 7 8 9 10 11 12 FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT 65 60 5 IEC , FORWARD CURRENT (A) FIGURE 19. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP trr , RECOVERY TIMES (ns) 13 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE 0 12 11 400 VCE = 390V 350 125oC IEC = 12A 300 125oC IEC = 6A 250 200 25oC IEC = 12A 150 100 25oC IEC = 6A 50 0 200 300 400 500 600 700 800 900 1000 diEC/dt, RATE OF CHANGE OF CURRENT (A/µs) FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF CURRENT HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS ZθJC , NORMALIZED THERMAL RESPONSE Typical Performance Curves Unless Otherwise Specified (Continued) 100 0.50 0.20 10-1 t1 0.10 PD 0.05 t2 0.02 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 0.01 SINGLE PULSE 10-2 -5 10 10-4 10-3 10-2 10-1 100 101 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms HGTP12N60A4D DIODE TA49371 90% 10% VGE EON2 EOFF L = 500µH VCE RG = 10Ω 90% DUT + - ICE VDD = 390V FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation 10% td(OFF)I tfI trI td(ON)I FIGURE 25. SWITCHING TEST WAVEFORMS HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2 ; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ©2001 Fairchild Semiconductor Corporation fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 25. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (P C) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 25. E ON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B