BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N–Channel TO–92 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) Drain Current Continuous (Note 1.) Pulsed (Note 2.) Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range http://onsemi.com Symbol Value Unit VDS 200 Vdc VGS VGSM ±20 ±30 Vdc Vpk ID IDM 250 500 PD 350 mW TJ, Tstg –55 to 150 °C mAdc 250 mAMPS 200 VOLTS RDS(on) = 14 Ω (BS107) RDS(on) = 6.4 Ω (BS107A) N–Channel D G 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%. S TO–92 CASE 29 Style 30 12 3 MARKING DIAGRAM & PIN ASSIGNMENT BS107 YWW 1 Drain 3 Source 2 Gate Y WW = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 November, 2000 – Rev. 2 1 Publication Order Number: BS107/D BS107, BS107A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero–Gate–Voltage Drain Current (VDS = 130 Vdc, VGS = 0) IDSS – – 30 nAdc Drain–Source Breakdown Voltage (VGS = 0, ID = 100 µAdc) V(BR)DSX 200 – – Vdc IGSS – 0.01 10 nAdc Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS) VGS(Th) 1.0 – 3.0 Static Drain–Source On Resistance BS107 (VGS = 2.6 Vdc, ID = 20 mAdc) (VGS = 10 Vdc, ID = 200 mAdc) BS107A (VGS = 10 Vdc) (ID = 100 mAdc) (ID = 250 mAdc) rDS(on) OFF CHARACTERISTICS Gate Reverse Current (VGS = 15 Vdc, VDS = 0) ON CHARACTERISTICS (Note 2.) Vdc Ohms – – – – 28 14 – – 4.5 4.8 6.0 6.4 SMALL–SIGNAL CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss – 60 – pF Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss – 6.0 – pF Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss – 30 – pF gfs 200 400 – mmhos Turn–On Time ton – 6.0 15 ns Turn–Off Time toff – 12 15 ns Forward Transconductance (VDS = 25 Vdc, ID = 250 mAdc) SWITCHING CHARACTERISTICS 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%. RESISTIVE SWITCHING +25 V TO SAMPLING SCOPE 50 Ω INPUT Vout 23 PULSE GENERATOR 50 Vin 20 dB 50 Ω ATTENUATOR 40 pF 50 ton 10 V INPUT Vin 90% 90% 10% OUTPUT Vout INVERTED 1M toff 90% 50% 10% PULSE WIDTH 50% Figure 2. Switching Waveforms Figure 1. Switching Test Circuit http://onsemi.com 2 BS107, BS107A 200 180 VGS = 0 V 160 5.0 VGS = 10 V 2.0 250 mA C, CAPACITANCE (pF) VDS , DRAIN-SOURCE VOLTAGE (VOLTS) 10 1.0 100 mA 0.5 140 120 100 Ciss 80 60 40 0.2 20 0.1 -55 -35 -15 85 105 65 +5.0 25 45 TJ, JUNCTION TEMPERATURE (°C) 125 0 145 40 10 20 30 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 0 0.7 0.6 I D(on) , DRAIN CURRENT (AMPS) 0.7 VGS = 10 V 0.5 0.4 0.3 0.2 0.1 0 0 1.0 5.0 6.0 7.0 8.0 2.0 3.0 4.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 9.0 10 10 V 5.0 V 0.5 0.4 0.3 4.0 V 0.2 0.1 3.0 V 0 Figure 5. Transfer Characteristic 2.0 10 4.0 6.0 8.0 12 14 16 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) Figure 6. Output Characteristic 0.7 10 V 0.6 0.5 5.0 V 0.4 0.3 4.0 V 0.2 0.1 3.0 V 1.0 50 Figure 4. Capacitance Variation 0.8 ID(on), DRAIN CURRENT (AMPS) ID(on) , DRAIN CURRENT (AMPS) Figure 3. On Voltage versus Temperature 0.6 Coss Crss 2.0 3.0 4.0 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) Figure 7. Saturation Characteristic http://onsemi.com 3 5.0 18 20 BS107, BS107A ORDERING INFORMATION Device Package Shipping BS107 TO–92 1000 Unit/Box BS107RLRA TO–92 2000 Tape & Reel BS107RL1 TO–92 2000 Tape & Reel BS107A TO–92 1000 Units/Box BS107ARLRM TO–92 2000 Ammo Pack BS107ARLRP TO–92 2000 Ammo Pack BS107ARL1 TO–92 2000 Tape & Reel http://onsemi.com 4 BS107, BS107A PACKAGE DIMENSIONS TO–92 CASE 29–11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K D X X G J H V C SECTION X–X 1 N N DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- STYLE 30: PIN 1. DRAIN 2. GATE 3. SOURCE http://onsemi.com 5 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- BS107, BS107A Notes http://onsemi.com 6 BS107, BS107A Notes http://onsemi.com 7 BS107, BS107A ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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