Transistor 2SA1961 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC5419 Unit: mm 1.05 2.5±0.1 ±0.05 ■ Features 0.8 0.2 High collector to emitter voltage VCEO. 14.5±0.5 0.65 max. ■ Absolute Maximum Ratings (1.45) 1.0 1.0 ● 4.0 0.5 4.5±0.1 0.15 6.9±0.1 0.7 (Ta=25˚C) +0.1 * Unit Collector to base voltage VCBO –200 V Collector to emitter voltage VCEO –200 V Emitter to base voltage VEBO –5 V Peak collector current ICP – 0.1 A Collector current IC –70 mA Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion 0.45–0.05 2.5±0.5 1 2.5±0.5 2 +0.1 Ratings 0.45–0.05 Symbol 3 2.5±0.1 Parameter Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package or more, and the board 1.2±0.1 0.65 max. 0.45+–0.1 0.05 (HW type) ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to emitter voltage VCEO IC = –100µA, IB = 0 –200 V Emitter to base voltage VEBO IE = –1µA, IC = 0 –5 V VCE = –10V, IC = –5mA 30 *1 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) IC = –50mA, IB = –5mA Transition frequency fT VCB = –5V, IE = 10mA, f = 200MHz 30 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 7 pF *1h FE 150 – –2.5 V Rank classification Rank P Q hFE 30 ~ 100 60 ~ 150 1 Transistor 2SA1961 PC — Ta IC — VCE 1.6 1.2 0.8 0.4 –120 –100 25˚C –100 IB=–1.0mA – 0.9mA – 0.8mA –80 – 0.7mA – 0.6mA –60 – 0.5mA – 0.4mA –40 – 0.3mA – 0.2mA –20 Ta=75˚C –25˚C –80 –60 –40 –20 – 0.1mA 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) –2 Ta=75˚C 25˚C –25˚C – 0.03 – 0.01 – 0.003 –3 –10 –30 –12 0 –100 –300 –1000 Collector current IC (mA) 24 210 180 150 Ta=75˚C 120 25˚C 90 –25˚C 60 30 0 –1 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 –3 –10 –30 –1.2 Base to emitter voltage VBE (V) Cob — VCB VCE=–10V Forward current transfer ratio hFE –1 – 0.001 –1 –10 240 IC/IB=10 – 0.1 –8 hFE — IC –3 – 0.3 –6 Collector to emitter voltage VCE (V) VCE(sat) — IC –10 –4 –100 –300 –1000 Collector current IC (mA) Collector output capacitance Cob (pF) 0 Collector to emitter saturation voltage VCE(sat) (V) VCE=–10V Ta=25˚C Collector current IC (mA) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 IC — VBE –120 Collector current IC (mA) Collector power dissipation PC (W) 2.0 f=1MHz IE=0 Ta=25˚C 20 16 12 8 4 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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