IRFP250 N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh™II MOSFET TYPE IRFP250 ■ ■ ■ ■ ■ VDSS RDS(on) ID 200V < 0.085Ω 33 A TYPICAL RDS(on) = 0.073Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 2 1 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. TO-247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLIES (UPS) ■ DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT ■ ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Drain-source Voltage (VGS = 0) 200 V Drain-gate Voltage (RGS = 20 kΩ) 200 V Gate- source Voltage ±20 V ID Drain Current (continuos) at TC = 25°C 33 A ID Drain Current (continuos) at TC = 100°C 20 A VDS VDGR VGS IDM (●) PTOT dv/dt(1) Tstg Tj Parameter Drain Current (pulsed) 132 A Total Dissipation at TC = 25°C 180 W Derating Factor 1.44 W/°C Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (•)Pulse width limited by safe operating area Sep 2000 5 V/ns –65 to 150 °C 150 °C (1)ISD ≤33A, di/dt ≤300A/µs, V DD ≤ V(BR)DSS, Tj ≤ T JMAX. 1/8 IRFP250 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Rthc-sink Tl 0.66 °C/W 30 °C/W Thermal Resistance Case-sink Typ 0.1 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 33 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 600 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. 200 Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 V Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 50 µA Gate-body Leakage Current (VDS = 0) VGS = ±30V ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 16A ID(on) On State Drain Current VDS > ID(on) x RDS(on)max, VGS = 10V Min. Typ. Max. Unit 2 3 4 V 0.073 0.085 Ω 33 A DYNAMIC Symbol 2/8 Parameter gfs Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID = 16A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 10 25 Max. Unit S 2850 pF Ciss Input Capacitance Coss Output Capacitance 420 pF Crss Reverse Transfer Capacitance 120 pF IRFP250 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 100V, ID =16 A RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) VDD = 160V, ID = 33 A, VGS = 10V, RG = 4.7Ω Typ. Max. Unit 25 ns 50 ns 117 158 nC 15 nC 50 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 160V, ID = 16 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 60 ns 40 ns 100 ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Source-drain Current ISDM (2) Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 33 A, VGS = 0 trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 33 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) IRRM Reverse Recovery Current Max. Unit 33 A 132 A 1.6 V 370 ns 5.4 µC 29 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 IRFP250 Output Characteristics Tranfer Characteristics Tranconductance Static Drain-Source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 IRFP250 Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 IRFP250 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 IRFP250 TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G H 10.9 15.3 0.429 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.582 L4 34.6 1.362 L5 5.5 0.217 M 2 3 0.079 0.118 P025P 7/8 IRFP250 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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