STSJ20NM20N N-CHANNEL 200V - 0.11Ω - 20A PowerSO-8™ ULTRA LOW GATE CHARGE MDmesh™II MOSFET TARGET DATA TYPE STSJ20NM20N ■ ■ ■ ■ ■ ■ VDSS RDS(on) ID 200 V < 0.13 Ω 20 A WORLDWIDE LOWEST GATE CHARGE TYPICAL RDS(on) = 0.11 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES LOW INPUT CAPACITANCE LOW GATE RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS DESCRIPTION This 200V MOSFET with a new advanced layout brings all unique advantages of MDmesh technology to lower voltages. The device exhibits worldwide lowest gate charge for any given on-resistance.Its use is therefore ideal as primary switch in isolated DC-DC converters for Telecom and Computer applications.Used in combination with secondary-side low-voltage STripFETTM products, it contributes to reducing losses and boosting efficiency.The exposed slug reduced the Rthj-c improving the current capability APPLICATIONS The MDmesh™ family is very suitable for increasing power density allowing system miniaturization and higher efficiencies. PowerSO-8 INTERNAL SCHEMATIC DIAGRAM DRAIN CONTACT ALSO ON THE BACKSIDE ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STSJ20NM20N SJ20NM20N PowerSO-8 TAPE & REEL June 2003 1/6 STSJ20NM20N ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID IDM (2) PTOT PTOT dv/dt (3) Parameter Value Unit Drain-source Voltage (VGS = 0) 200 V Drain-gate Voltage (RGS = 20 kΩ) 200 V Gate-source Voltage ± 30 V Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C 20 12.5 A A Drain Current (pulsed) 80 A Total Dissipation at TC = 25°C Total Dissipation at TC = 25°C (1) 70 3 W W Peak Diode Recovery voltage slope 10 V/ns 1.8 °C/W Thermal Resistance Junction-ambient Max (1) 42 °C/W Max. Operating Junction Temperature 150 °C – 55 to 150 °C Max Value Unit THERMAL DATA Rthj-c Rthj-amb Tj Tstg Thermal Resistance Junction-case Max Storage Temperature AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) TBD A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 35 V) TBD mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol V(BR)DSS 2/6 Parameter Drain-source Breakdown Voltage Test Conditions ID = 1 mA, VGS = 0 IDSS VDS = Max Rating Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating, TC = 125 °C IGSS Gate-body Leakage Current (VDS = 0) Min. Typ. Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10 V, ID = 2 A 3.5 Unit V 1 10 µA µA 100 nA 4.2 5 V 0.11 0.13 Ω VGS = ± 30V VGS(th) Max. 200 STSJ20NM20N ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC Symbol gfs (4) Ciss Coss Crss Coss eq. (*) RG Parameter Test Conditions Min. Typ. Max. Unit Forward Transconductance VDS = 15 V , ID = 2 A 1.4 S Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 670 180 12 pF pF pF VGS = 0V, VDS = 0V to 400V TBD pF TBD Ω Equivalent Output Capacitance Gate Input Resistance f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain (*) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS SWITCHING ON Symbol Parameter Test Conditions td(on) tr Turn-on Delay Time Rise Time VDD = 100 V, ID = 2 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 160 V, ID = 4 A, VGS = 10 V Min. Typ. Max. Unit TBD TBD ns ns 19 3.5 11 nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-Voltage Rise Time Fall Time Cross-Over Time Test Conditions Min. Typ. Max. TBD TBD TBD VDD = 100 V, ID = 2 A, RG = 4.7Ω, VGS = 10 V (see test circuit, Figure 3) Unit ns ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (4) Forward On Voltage ISD = 2 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 2 A, di/dt = 100 A/µs, VDD = 100 V, Tj = 25°C (see test circuit, Figure 5) 89 300 6.5 ns nC A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 2 A, di/dt = 100 A/µs, VDD = 100 V, Tj = 150°C (see test circuit, Figure 5) TBD TBD TBD ns nC A trr Qrr IRRM trr Qrr IRRM Note: 1. 2. 3. 4. Test Conditions Min. Typ. Max. Unit 20 80 A A 1.3 V When mounted on FR4 Board with 1inch² pad, 2oz of Cu, t ≤ 10 sec. Pulse width limited by safe operating area ISD ≤ 20A, di/dt ≤ 400A/µs, VDD ≤ V(BR)DSS, T J ≤ TJMAX Pulsed: Pulse duration = 400 µs, duty cycle 1.5 % 3/6 STSJ20NM20N Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 STSJ20NM20N PowerSO-8™ MECHANICAL DATA DIM. mm. MIN. TYP A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.25 a2 MAX. 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 c1 45° (typ.) D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 e4 2.79 0.110 F 3.8 4.0 0.14 L 0.4 1.27 0.015 M S 0.6 0.157 0.050 0.023 8° (max.) 5/6 STSJ20NM20N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 6/6