STW44NM60 N-CHANNEL 600V - 0.09Ω - 44A TO-247 MDmesh Power MOSFET TARGET DATA TYPE STW44NM60 ■ ■ ■ ■ ■ ■ VDSS RDS(on) ID 600V < 0.11Ω 44 A TYPICAL RDS(on) = 0.09Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS DESCRIPTION The MDmesh is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. 3 2 1 TO-247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS The MDmesh family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Drain-source Voltage (VGS = 0) 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 44 A ID Drain Current (continuos) at TC = 100°C 28 A IDM (●) Drain Current (pulsed) 176 A PTOT Total Dissipation at TC = 25°C 260 W Derating Factor 2.08 W/°C 6 V/ns –65 to 150 °C 150 °C VDS VDGR VGS Parameter dv/dt Peak Diode Recovery voltage slope Tstg Storage Temperature Tj Max. Operating Junction Temperature (•)Pulse width limited by safe operating area April 2001 1/6 STW44NM60 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.48 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W 0.1 °C/W 300 °C Rthc-sink Tl Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 35 V) Max Value Unit 20 A TBD mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating 10 µA VDS = Max Rating, TC = 125 °C 100 µA Gate-body Leakage Current (VDS = 0) VGS = ±30V ±100 nA 600 V ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA R DS(on) Static Drain-source On Resistance VGS = 10V, ID = 22A ID(on) On State Drain Current VDS > ID(on) x RDS(on)max, VGS = 10V Min. Typ. Max. Unit 3 4 5 V 0.09 0.11 Ω 44 A DYNAMIC Symbol gfs (1) Parameter Test Conditions Typ. Max. Unit VDS > ID(on) x RDS(on)max, ID = 22A TBD S C iss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 TBD pF Coss Output Capacitance TBD pF Crss Reverse Transfer Capacitance TBD pF RG Gate Input Resistance TBD Ω f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2/6 Min. Forward Transconductance STW44NM60 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Q gd Gate-Drain Charge Test Conditions Min. VDD = 250V, I D = 22A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 400V, I D = 44A, VGS = 10V Typ. Max. Unit TBD ns TBD ns TBD nC TBD nC TBD nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 400V, I D = 44A, R G = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit TBD ns TBD ns TBD ns SOURCE DRAIN DIODE Symbol Max. Unit Source-drain Current 44 A ISDM (2) Source-drain Current (pulsed) 176 A VSD (1) Forward On Voltage ISD = 44A, VGS = 0 1.5 V ISD = 44A, di/dt = 100A/µs, VDD = 60V, Tj = 150°C (see test circuit, Figure 5) ISD Parameter trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Test Conditions Min. Typ. TBD ns TBD µC TBD A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/6 STW44NM60 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 STW44NM60 TO-247 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. A 4.85 5.15 0.19 TYP. 0.20 D 2.20 2.60 0.08 0.10 E 0.40 0.80 0.015 0.03 F 1 1.40 0.04 0.05 F1 3 0.11 F2 2 0.07 MAX. F3 2 2.40 0.07 0.09 F4 3 3.40 0.11 0.13 G 10.90 0.43 H 15.45 15.75 0.60 0.62 L 19.85 20.15 0.78 0.79 L1 3.70 4.30 0.14 L2 L3 18.50 14.20 0.17 0.72 14.80 0.56 0.58 L4 34.60 1.36 L5 5.50 0.21 M 2 3 0.07 0.11 V 5º 5º V2 60º 60º Dia 3.55 3.65 0.14 0.143 5/6 STW44NM60 Information furnished is believed to be accurate and reliable. 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