PANASONIC 2SB1553

Power Transistors
2SB1553
Silicon PNP epitaxial planar type
For power amplification
Unit: mm
5.0±0.1
■ Features
■ Absolute Maximum Ratings
(TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–60
V
Collector to emitter voltage
VCEO
–60
V
Emitter to base voltage
VEBO
–6
V
Peak collector current
ICP
–6
A
Collector current
IC
–3
A
Base current
IB
–1
A
Collector power TC=25°C
dissipation
15
PC
Ta=25°C
Junction temperature
Tj
Storage temperature
Tstg
■ Electrical Characteristics
Parameter
90°
0.35±0.1
150
˚C
–55 to +150
˚C
1.2±0.1
C1.0
2.25±0.2
0.65±0.1
1.05±0.1
0.55±0.1
0.55±0.1
C1.0
1 2 3
2.5±0.2
2.5±0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
W
2
(TC=25˚C)
Symbol
ICBO
Collector cutoff current
1.0
2.5±0.2
●
13.0±0.2
4.2±0.2
●
High foward current transfer ratio hFE
Satisfactory linearity of foward current transfer ratio hFE
Allowing automatic insertion with radial taping
18.0±0.5
Solder Dip
●
10.0±0.2
max
Unit
VCB = –60V, IE = 0
Conditions
min
typ
–100
µA
ICEO
VCE = –40V, IB = 0
–100
µA
Emitter cutoff current
IEBO
VEB = –6V, IC = 0
–100
µA
Collector to emitter voltage
VCEO
IC = –25mA, IB = 0
–60
Forward current transfer ratio
hFE*
VCE = –4V, IC = – 0.5A
300
Collector to emitter saturation voltage
VCE(sat)
IC = –2A, IB = – 0.05A
Transition frequency
fT
VCE = –12V, IC = – 0.2A, f = 10MHz
*h
FE
V
700
–1
30
V
MHz
Rank classification
Rank
Q
P
hFE
300 to 500
400 to 700
1
Power Transistors
2SB1553
PC — Ta
IC — VCE
–6
TC=25˚C
(1) TC=Ta
(2) Without heat sink
(PC=2.0W)
(1)
5
–5
IB=–100mA
–80mA
–60mA
–4
–40mA
–3
–20mA
–2
–10mA
–5mA
–1
40
–3
–2
25˚C
TC=125˚C
–25˚C
–2mA
0
20
–4
–1
(2)
60
80 100 120 140 160
0
0
Ambient temperature Ta (˚C)
–2
–4
–6
–8
–10
–12
VCE=–4V
Transition frequency fT (MHz)
Forward current transfer ratio hFE
TC=100˚C
–1
–25˚C
– 0.1
– 0.03
–1
–3
25˚C
1000
25˚C
–3
– 0.3
TC=100˚C
–25˚C
300
100
30
10
– 0.01 – 0.03 – 0.1 – 0.3
–10
Collector current IC (A)
Cob — VCB
–1
–3
300
30
10
3
10
3
Pulsed tw=1ms
Duty cycle=1%
IC/IB=40
(–IB1=IB2)
VCC=–50V
TC=25˚C
10
–3
–10
Area of safe operation (ASO)
–10
–3
Collector current IC (A)
30
Switching time ton,tstg,tf (µs)
100
–1
Collector current IC (A)
ton, tstg, tf — IC
30
–2.0
100
1
– 0.01 – 0.03 – 0.1 – 0.3
–10
100
IE=0
f=1MHz
TC=25˚C
–1.6
VCE=–12V
f=10MHz
TC=25˚C
Collector current IC (A)
1000
–1.2
1000
3000
–10
– 0.8
fT — IC
IC/IB=40
–30
300
– 0.4
Base to emitter voltage VBE (V)
hFE — IC
10000
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
0
Collector to emitter voltage VCE (V)
VCE(sat) — IC
–100
Collector to emitter saturation voltage VCE(sat) (V)
Collector current IC (A)
10
0
Collector output capacitance Cob (pF)
VCE=–4V
–5
15
0
3
tf
1
ICP
Non
repetitive
pulse
TC=25˚C
t=10ms
IC
1ms
DC
–1
– 0.3
ton
tstg
0.3
– 0.1
0.1
– 0.03
0.03
1
–1
0.01
–3
–10
–30
–100
Collector to base voltage VCB (V)
2
IC — VBE
–6
Collector current IC (A)
Collector power dissipation PC (W)
20
0
–2
–4
–6
Collector current IC (A)
–8
– 0.01
0.1
0.3
1
3
10
30
100
Collector to emitter voltage VCE (V)
Power Transistors
2SB1553
Rth(t) — t
Thermal resistance Rth(t) (˚C/W)
10000
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
1000
100
(1)
(2)
10
1
0.1
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3