Power Transistors 2SD1985, 2SD1985A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1393 and 2SB1393A Unit: mm ■ Features Parameter (TC=25˚C) Symbol Collector to 2SD1985 base voltage 2SD1985A Collector to 2SD1985 Ratings 60 VCBO 60 V 80 Emitter to base voltage VEBO 6 V Peak collector current ICP 5 A Collector current IC 3 A Collector power TC=25°C dissipation 25 PC Ta=25°C Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics 150 ˚C –55 to +150 ˚C Symbol 2SD1985 current 2SD1985A Collector cutoff 2SD1985 current 2SD1985A Emitter cutoff current ICES ICEO IEBO Collector to emitter 2SD1985 voltage 2SD1985A Forward current transfer ratio Conditions 0.7±0.1 4.2±0.2 7.5±0.2 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) min typ max 200 VCE = 80V, IB = 0 200 VCE = 30V, IB = 0 300 VCE = 60V, IB = 0 300 VEB = 6V, IC = 0 1 60 VCEO IC = 30mA, IB = 0 hFE1* VCE = 4V, IC = 1A 70 10 hFE2 VCE = 4V, IC = 3A VBE VCE = 4V, IC = 3A Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.375A Transition frequency fT VCE = 5V, IC = 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf FE1 0.8±0.1 1.3±0.2 VCE = 60V, IB = 0 Base to emitter voltage *h 1.4±0.1 (TC=25˚C) Parameter Collector cutoff 2.7±0.2 φ3.1±0.1 W 2 4.2±0.2 5.5±0.2 Unit V 80 VCEO emitter voltage 2SD1985A 16.7±0.3 ■ Absolute Maximum Ratings 10.0±0.2 4.0 ● High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 14.0±0.5 ● Solder Dip ● VCC = 50V µA µA mA V 80 IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, Unit 250 1.8 1.2 V V 30 MHz 0.5 µs 2.5 µs 0.4 µs Rank classification Rank Q P hFE1 70 to 150 120 to 250 Note: Ordering can be made by the common rank (PQ rank hFE = 70 to 250) in the rank classification. 1 Power Transistors 2SD1985, 2SD1985A PC — Ta IC — VCE IC — VBE 5 8 TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink VCE=4V 7 30 (1) 20 10 (2) 4 Collector current IC (A) Collector current IC (A) Collector power dissipation PC (W) 40 IB=100mA 90mA 80mA 70mA 60mA 50mA 40mA 3 30mA 2 20mA 1 25˚C 6 TC=100˚C 5 –25˚C 4 3 2 10mA 1 (3) 0 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 6 8 10 3000 25˚C 1 –25˚C 0.1 0.03 0.3 1 3 300 100 TC=100˚C 25˚C –25˚C 30 10 3 Collector current IC (A) 10 0.1 0.3 1 3 1 0.01 0.03 10 0.1 0.3 1 3 Collector current IC (A) Rth(t) — t 10ms – 0.1 – 0.03 2SD1985 –30 2SD1985A – 0.01 –10 –100 –300 –1000 Collector to emitter voltage VCE Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 1000 t=1ms DC – 0.003 Thermal resistance Rth(t) (˚C/W) Collector current IC (A) Non repetitive pulse TC=25˚C – 0.3 2 30 10000 IC –3 100 Collector current IC (A) –1 – 0.001 –1 300 3 Area of safe operation (ASO) ICP (V) 100 (1) (2) 10 1 0.1 10–4 2.4 1000 1 0.01 0.03 10 2.0 VCE=5V f=10MHz TC=25˚C 3000 Transition frequency fT (MHz) Forward current transfer ratio hFE TC=100˚C 0.1 1.6 fT — IC 1000 0.01 0.01 0.03 1.2 VCE=4V 10 0.3 0.8 10000 IC/IB=8 3 0.4 Base to emitter voltage VBE (V) hFE — IC 30 –3 0 10000 100 –10 12 Collector to emitter voltage VCE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 4 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10