Order this document by 2N5088/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N508 8 2N508 9 Unit Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage VCBO 35 30 Vdc Emitter – Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg – 55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA(1) 200 °C/W RqJC 83.3 °C/W Operating and Storage Junction Temperature Range CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 30 25 — — 35 30 — — — — 50 50 — — 50 100 Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0) V(BR)CEO 2N5088 2N5089 Vdc V(BR)CBO 2N5088 2N5089 Vdc ICBO 2N5088 2N5089 Emitter Cutoff Current (VEB(off) = 3.0 Vdc, IC = 0) (VEB(off) = 4.5 Vdc, IC = 0) nAdc IEBO nAdc 1. RθJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 2N5088 2N5089 300 400 900 1200 (IC = 1.0 mAdc, VCE = 5.0 Vdc) 2N5088 2N5089 350 450 — — (IC = 10 mAdc, VCE = 5.0 Vdc)(2) 2N5088 2N5089 300 400 — — Unit ON CHARACTERISTICS DC Current Gain (IC = 100 µAdc, VCE = 5.0 Vdc) hFE — Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) — 0.5 Vdc Base – Emitter On Voltage (IC = 10 mAdc, VCE = 5.0 Vdc)(2) VBE(on) — 0.8 Vdc fT 50 — MHz Collector–Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb — 4.0 pF Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb — 10 pF 350 450 1400 1800 — — 3.0 2.0 SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz) Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) hfe 2N5088 2N5089 Noise Figure (IC = 100 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) — NF 2N5088 2N5089 dB 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) NOISE VOLTAGE 30 30 BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz 20 RS ≈ 0 IC = 10 mA en , NOISE VOLTAGE (nV) en , NOISE VOLTAGE (nV) 20 3.0 mA 10 1.0 mA 7.0 5.0 RS ≈ 0 f = 10 Hz 10 100 Hz 7.0 10 kHz 1.0 kHz 5.0 300 µA 3.0 10 20 50 100 200 3.0 0.01 0.02 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) Figure 2. Effects of Frequency IC = 10 mA 3.0 mA 1.0 mA 300 µA 100 µA 0.3 0.2 RS ≈ 0 0.1 10 20 10 µA 50 100 200 10 16 3.0 1.0 0.7 0.5 5.0 20 BANDWIDTH = 1.0 Hz 2.0 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) Figure 3. Effects of Collector Current NF, NOISE FIGURE (dB) In, NOISE CURRENT (pA) 10 7.0 5.0 100 kHz BANDWIDTH = 10 Hz to 15.7 kHz 12 500 µA 8.0 IC = 1.0 mA 100 µA 10 µA 4.0 30 µA 0 10 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 20 Figure 4. Noise Current 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 5. Wideband Noise Figure 100 Hz NOISE DATA 20 BANDWIDTH = 1.0 Hz IC = 10 mA 16 100 µA 100 70 50 3.0 mA 1.0 mA 30 300 µA 20 10 7.0 5.0 30 µA 10 µA NF, NOISE FIGURE (dB) VT, TOTAL NOISE VOLTAGE (nV) 300 200 IC = 10 mA 3.0 mA 1.0 mA 12 300 µA 8.0 100 µA 30 µA 4.0 10 µA BANDWIDTH = 1.0 Hz 0 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 6. Total Noise Voltage Motorola Small–Signal Transistors, FETs and Diodes Device Data 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 7. Noise Figure 3 h FE, DC CURRENT GAIN (NORMALIZED) 4.0 3.0 VCE = 5.0 V 2.0 TA = 125°C 25°C 1.0 – 55°C 0.7 0.5 0.4 0.3 0.2 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA) 1.0 2.0 3.0 5.0 10 Figure 8. DC Current Gain 1.0 RθVBE, BASE–EMITTER TEMPERATURE COEFFICIENT (mV/ °C) – 0.4 TJ = 25°C V, VOLTAGE (VOLTS) 0.8 0.6 VBE @ VCE = 5.0 V 0.4 0.2 – 0.8 – 1.2 TJ = 25°C to 125°C – 1.6 – 2.0 – 55°C to 25°C VCE(sat) @ IC/IB = 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 – 2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 100 8.0 C, CAPACITANCE (pF) 6.0 TJ = 25°C Cob 4.0 3.0 Ceb Cib Ccb 2.0 1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance 4 50 100 Figure 10. Temperature Coefficients 50 100 f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) Figure 9. “On” Voltages 20 500 300 200 100 VCE = 5.0 V TJ = 25°C 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 12. Current–Gain — Bandwidth Product Motorola Small–Signal Transistors, FETs and Diodes Device Data PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD Motorola Small–Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR 5 Motorola reserves the right to make changes without further notice to any products herein. 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