BIC701M Bias Controlled Monolithic IC VHF/UHF RF Amplifier ADE-208-703C (Z) 4th. Edition Nov. 1, 1998 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High gain; PG = 27 dB typ. (at f = 200 MHz), PG = 21.5 dB typ. (at f = 900 MHz) • Low noise; NF = 1.1 dB typ. (at f = 200 MHz), NF = 1.75 dB typ. (at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. Marking is “AZ–”. 2. BIC701M is individual type number of HITACHI BICMIC. BIC701M Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDS 6 V Gate1 to source voltage VG1S +6 –0 V Gate2 to source voltage VG2S +6 –0 V Drain current ID 20 mA Channel power dissipation Pch 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 6 — — V I D = 200µA VG2S = 0,VG1 = open Gate1 to source breakdown voltage V(BR)G1SS +6 — — V I G1 = +10µA VG2S = VDS = 0 Gate2 to source breakdown voltage V(BR)G2SS +6 — — V I G2 = +10µA VG1S = VDS = 0 Gate1 to source cutoff current I G1SS — — +100 nA VG1S = +5V VG2S = VDS = 0 Gate2 to source cutoff current I G2SS — — +100 nA VG2S = +5V VG1S = VDS = 0 Gate2 to source cutoff voltage VG2S(off) 0.5 0.7 1.0 V VDS = 5V, ID = 100µA VG1 = open Drain current I DS(op) 7 10 13 mA VDS = 5V , VG2S = 4V VG1 = open Forward transfer admittance |yfs| 22 27 32 mS VDS = 5V, ID = 10mA VG2S =4V, f = 1kHz Input capacitance c iss 1.6 2.0 2.3 pF VDS = 5V, VG2S =4V Output capacitance c oss 0.6 1.0 1.4 pF VG1 = open Reverse transfer capacitance c rss — 0.024 0.05 pF f = 1MHz Power gain 23 27 — dB VDS = 5V, VG2S =4V PG1 VG1 = open Noise figure NF1 — 1.1 1.6 dB f = 200MHz Power gain PG2 17 21.5 — dB VDS = 5V, VG2S =4V VG1 = open Noise figure 2 NF2 — 1.75 2.3 dB f = 900MHz BIC701M Main Characteristics Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG) VG2 VG1 RG Gate 2 Gate 1 Drain Source A ID 200MHz Power Gain, Noise Figure Test Circuit 1000p 1000p 47k VT VG2 VT 1000p 47k 1000p 47k BBFET Output(50¶) 1000p L2 Input(50¶) L1 10p max 1000p 1000p 36p RFC 1SV70 1SV70 1000p VD Unit@ Resistance@ (¶ ) @@ Capacitance@ (F) L1 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns L2 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns RFC : 1mm Enameled Copper Wire,Inside dia 5mm, 2Turns 3 BIC701M 900MHz Power Gain, Noise Test Circuit VD VG2 C5 C4 R1 C3 R2 RFC D G2 Output L3 L4 G1 Input S L1 L2 C1 C1, C2F C3 F C4, C5F R1 F R2 F C2 Variable Capacitori10pF MAX) Disk Capacitori1000pF) Air Capacitori1000pF) 47 k¶ 4.7 k¶ L2F L1F 10 3 3 8 10 26 i1mm Copper wirej UnitFmm 21 L4F L3F 18 10 10 7 7 29 RFCF1mm Copper wire with enamel 4turns inside d 4 i 200 Maximum Channel Power Dissipation Curve 20 I D (mA) 150 100 50 16 12 8 3V 2V 4 0 50 100 150 0 200 1 2 3 4 Drain to Source Voltage Ta (°C) 5 V DS (V) Power Gain vs. Gate2 to Source Voltage Drain Current vs. Gate1 Voltage 30 20 VG2S = 4 V 3V 25 Power Gain PG (dB) I D (mA) VG2S = 4 V 1V Ambient Temperature Drain Current Typical Output Characteristics VG1 = open Drain Current Channel Power Dissipation Pch (mW) BIC701M 15 2V 10 5 1.0 Gate1 Voltage V G1 2.0 (V) 15 10 5 1V 0 20 0 1 V DS = 5 V V G1 = open f = 200 MHz 4 2 3 Gate2 to Source Voltage V G2S (V) 5 BIC701M Noise Figure vs. Gate2 to Source Voltage Power Gain vs. Gate2 to Source Voltage 4 30 V DS = 5 V V G1 = open f = 200 MHz 3 2 1 0 1 25 Power Gain PG (dB) Noise Figure NF (dB) 5 20 15 10 V DS = 5 V V G1 = open f = 900 MHz 5 0 1 4 2 3 Gate2 to Source Voltage V G2S (V) 4 2 3 Gate2 to Source Voltage V G2S (V) Power Gain vs. Drain to Source Voltage Noise Figure vs. Gate2 to Source Voltage 4 30 V DS = 5 V V G1 = open f = 900 MHz 3 2 1 0 1 6 25 Power Gain PG (dB) Noise Figure NF (dB) 5 20 15 10 VG2S = 4 V V G1 = open f = 200 MHz 5 4 2 3 Gate2 to Source Voltage V G2S (V) 0 1 2 3 4 5 Drain to Source Voltage 6 V DS (V) 7 BIC701M Power Gain vs. Drain to Source Voltage Noise Figure vs. Drain to Source Voltage 30 VG2S = 4 V V G1 = open f = 200 MHz 3 25 Power Gain PG (dB) Noise Figure NF (dB) 4 2 1 20 15 10 VG2S = 4 V V G1 = open f = 900 MHz 5 0 1 2 3 4 5 Drain to Source Voltage 6 0 1 7 V DS (V) Noise Figure vs. Drain to Source Voltage Gain Reduction vs. Gate2 to Source Voltage 0 Gain Reduction GR (dB) Noise Figure NF (dB) 4 3 2 1 0 2 3 4 5 6 7 Drain to Source Voltage V DS (V) VG2S = 4 V V G1 = open f = 900 MHz 10 20 30 40 50 2 3 4 5 Drain to Source Voltage 6 V DS (V) 7 V DS = 5 V V G1 = open V G2S = 4 V f = 200 MHz 4 2 3 1 0 Gate2 to Source Voltage V G2S (V) 7 BIC701M Gain Reduction vs. Gate2 to Source Voltage Input Capacitance vs. Gate2 to Source Voltage 10 20 30 V DS = 5 V V G1 = open V G2S = 4 V f = 900 MHz 40 50 8 4 4 2 3 1 0 Gate2 to Source Voltage V G2S (V) Input Capacitance Ciss (pF) Gain Reduction GR (dB) 0 3 2 V DS = 4 V V G1 = open f = 1 MHz 1 0 1 2 3 4 Gate2 to Source Voltage V G2S (V) BIC701M S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 90° 1.5 Scale: 1 / div. 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° –10 –5 –4 –.2 –3 –.4 –30° –150° –2 –.6 –.8 –1 –90° Test Condition : V DS = 5 V , V G1 = open V G2S = 4 V , Zo =50 Ω Test Condition : V DS = 5 V , V G1 = open V G2S = 4 V , Zo =50 Ω 50 ‘ 1000 MHz (50 MHz step) 50 ‘ 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90° S22 Parameter vs. Frequency Scale: 0.002 / div. .8 60° 120° –60° –120° –1.5 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1 1.5 2 3 45 10 –10 –5 –4 –.2 –30° –150° –3 –.4 –60° –120° –90° Test Condition : V DS = 5 V , V G1 = open V G2S = 4 V , Zo =50 Ω 50 ‘ 1000 MHz (50 MHz step) –2 –.6 –.8 –1 –1.5 Test Condition : V DS = 5 V , V G1 = open V G2S = 4 V , Zo =50 Ω 50 ‘ 1000 MHz (50 MHz step) 9 BIC701M Sparameter (VDS = VG1 = 5V, VG2S = 4V, VG1 = open, Zo = 50Ω) S11 S21 S12 S22 f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 50 0.994 –3.1 2.54 175.5 0.00132 50.0 0.978 –2.4 100 0.993 –6.6 2.52 171.0 0.00201 59.8 0.981 –5.1 150 0.988 –10.5 2.51 166.4 0.00228 66.1 0.979 –7.5 200 0.983 –14.1 2.49 161.6 0.00323 66.7 0.979 –10.1 250 0.977 –17.9 2.46 157.2 0.00420 70.2 0.976 –12.7 300 0.970 –21.8 2.43 152.8 0.00514 71.9 0.974 –15.1 350 0.963 –25.4 2.40 148.6 0.00532 76.1 0.971 –17.6 400 0.951 –28.8 2.37 143.7 0.00629 74.2 0.969 –20.1 450 0.943 –32.4 2.34 139.4 0.00665 70.8 0.966 –22.4 500 0.933 –35.4 2.29 135.1 0.00700 71.6 0.962 –24.9 550 0.918 –39.1 2.25 131.1 0.00756 69.3 0.958 –27.3 600 0.906 –42.0 2.21 127.2 0.00790 68.1 0.954 –29.7 650 0.895 –45.5 2.17 123.0 0.00836 67.6 0.951 –32.2 700 0.882 –48.7 2.13 119.4 0.00820 66.1 0.946 –34.4 750 0.879 –51.1 2.09 115.6 0.00818 65.9 0.942 –36.8 800 0.860 –54.6 2.05 111.7 0.00819 66.5 0.938 –39.2 850 0.845 –58.3 2.02 107.8 0.00798 70.7 0.933 –41.5 900 0.835 –60.7 1.96 104.2 0.00787 71.9 0.929 –43.8 950 0.827 –63.3 1.92 100.5 0.00727 73.1 0.924 –46.2 1000 0.812 –66.4 1.88 97.0 0.00758 75.6 0.919 –48.5 10 BIC701M Package Dimensions (Unit: mm) + 0.3 2.8 – 0.1 + 0.1 0.4 – 0.05 0.4 – 0.05 3 0.65 – 0.3 + 0.1 + 0.1 1.9 0.95 0.95 + 0.1 0.16 – 0.06 + 0.2 2.8 – 0.6 1.5 2 0 ~ 0.1 0.95 0.85 0.65– 0.3 + 0.1 0.6 – 0.05 + 0.1 1 4 + 0.1 0.4 – 0.05 + 0.2 1.1– 0.1 0.3 1.8 Hitachi Code EIAJ JEDEC MPAK–4 SC–61AA — 11 BIC701M Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, CA 94005-1897 Tel: <1> (800) 285-1601 Fax: <1> (303) 297-0447 Hitachi Europe GmbH Electronic components Group Dornacher Straße 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 12