3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-600(Z) 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V Outline CMPAK-4 2 3 1 4 Note: Marking is “YB–”. 1. Source 2. Gate1 3. Gate2 4. Drain 3SK318 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDS 6 V Gate1 to source voltage VG1S ±6 V Gate2 to source voltage VG2S ±6 V Drain current ID 20 mA Channel power dissipation Pch 100 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown V(BR)DSS 6 — — V I D = 200µA, VG1S = VG2S = 0 V(BR)G1SS ±6 — — V I G1 = ±10µA, VG2S = VDS = 0 V(BR)G2SS ±6 — — V I G2 = ±10µA, VG1S = VDS = 0 Gate1 to source cutoff current I G1SS — — ±100 nA VG1S = ±5V, VG2S = VDS = 0 Gate2 to source cutoff current I G2SS — — ±100 nA VG2S = ±5V, VG1S = VDS = 0 Gate1 to source cutoff voltage VG1S(off) 0.5 0.7 1.0 V VDS = 5V, VG2S = 3V I D = 100µA Gate2 to source cutoff voltage VG2S(off) 0.5 0.7 1.0 V VDS = 5V, VG1S = 3V I D = 100µA Drain current I DS(op) 0.5 4 10 mA VDS = 3.5V, VG1S = 1.1V VG2S = 3V Forward transfer admittance |yfs| 18 24 32 mS VDS = 3.5V, VG2S = 3V I D = 10mA , f = 1kHz Input capacitance Ciss 1.3 1.6 1.9 pF VDS = 3.5V, VG2S = 3V Output capacitance Coss 0.9 1.2 1.5 pF I D = 10mA , f= 1MHz Reverse transfer capacitance Crss — 0.019 0.03 pF Power gain PG 18 21 — dB VDS = 3.5V, VG2S = 3V Noise figure NF — 1.4 2.2 dB I D = 10mA , f = 900MHz voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage 2 3SK318 20 200 I D (mA) 150 100 50 1.6 V 16 1.5 V 12 1.4 V 1.3 V 8 1.2 V 1.1 V 4 0.9 V 50 100 150 Ambient Temperature 0 200 Ta (°C) V DS = 3.5 V 20 2.5 V 16 2.0 V 8 Drain Current 12 I D (mA) 20 1.5 V 4 16 V DS = 3.5 V 1 2 3 Gate1 to Source Voltage 4 5 VG1S (V) 8 10 V DS (V) 1.8 V 2.0 V 1.6 V 12 1.4 V 8 1.2 V 4 VG1S = 1.0 V VG2S = 1.0 V 0 0.8 V 2 4 6 Drain to Source Voltage Drain Current vs. Gate2 to Source Voltage Drain Current vs. Gate1 to Source Voltage I D (mA) V G2S = 3 V 1.0 V 0 Drain Current Typical Output Characteristics VG1S = 1.7 V Drain Current Channel Power Dissipation Pch (mW) Maximum Channel Power Dissipation Curve 0 1 2 3 Gate2 to Source Voltage 4 5 VG2S (V) 3 V DS = 3.5 V Power Gain vs. Drain Current 25 V G2S = 3 V 24 2.5 V 18 12 2V 1.5 V 6 (dB) 30 Forward Transfer Admittance vs. Gate1 Voltage 20 Power Gain PG Forward Transfer Admittance |y fs | (mS) 3SK318 15 10 5 1V 0 0.4 0.8 1.2 Gate1 to Source Voltage 1.6 0 2.0 VG1S (V) Noise Figure vs. Drain Current 2 1 5 10 15 Drain Current I D 20 (mA) 25 (dB) V DS = 3.5 V V G2S = 3 V f = 900 MHz 20 Power Gain PG (dB) Noise Figure NF 4 20 (mA) 25 25 3 0 5 10 15 Drain Current I D Power Gain vs. Drain to Source Voltage 5 4 V DS = 3.5 V V G2S = 3 V f = 900 MHz 15 10 5 0 V G2S = 3 V I D = 10 mA f = 900 MHz 2 4 6 Drain to Source Voltage 8 10 VDS (V) 3SK318 Noise Figure vs. Drain to Source Voltage Power Gain vs. Gate2 to Source Voltage 25 4 20 3 2 1 0 5 Noise Figure NF (dB) V G2S = 3 V I D = 10 mA f = 900 MHz Power Gain PG (dB) Noise Figure NF (dB) 5 2 4 6 Drain to Source Voltage 8 10 V DS (V) VDS = 3.5 V f = 900MHz 15 10 5 0 1 2 3 4 5 Gate2 to Source Voltage VG2S (V) Noise Figure vs. Gate2 to Source Voltage VDS = 3.5 V f = 900MHz 4 3 2 1 0 1 2 3 4 5 Gate2 to Source Voltage VG2S (V) 5 3SK318 S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 90° 1.5 Scale: 1 / div. 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° –10 –5 –4 –.2 –3 –.4 –30° –150° –2 –.6 –.8 –1 –60° –120° –1.5 –90° Test Condition : V DS = 3.5 V , VG2S = 3 V I D = 10mA 50 to 1000 MHz (50 MHz step) Test Condition : V DS = 3.5 V , V G2S = 3 V I D = 10mA 50 to 1000 MHz (50 MHz step) S12 Parameter vs. Frequency S22 Parameter vs. Frequency 90° Scale: 0.002 / div. .8 60° 120° 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1 1.5 2 3 45 10 –10 –5 –4 –.2 –30° –150° –3 –.4 –60° –120° –90° Test Condition : V DS = 3.5 V , VG2S = 3 V I D = 10mA 50 to 1000 MHz (50 MHz step) 6 –2 –.6 –.8 –1 –1.5 Test Condition : V DS = 3.5 V , VG2S = 3 V I D = 10mA 50 to 1000 MHz (50 MHz step) 3SK318 Sparameter (VDS = 3.5V, VG2S = 3V, ID = 10mA, Zo = 50Ω) S11 S21 S12 S22 f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 50 1.000 –2.8 2.41 176.3 0.00068 89.1 0.999 –2.2 100 0.998 –5.8 2.41 171.9 0.00176 88.5 0.996 –4.5 150 0.997 –9.1 2.39 167.6 0.00223 80.7 0.996 –6.7 200 0.994 –12.2 2.38 163.7 0.00303 76.6 0.994 –8.7 250 0.994 –15.1 2.37 159.8 0.00365 79.1 0.991 –11.0 300 0.986 –18.5 2.35 155.5 0.00414 75.4 0.988 –13.2 350 0.978 –21.3 2.30 151.4 0.00484 75.0 0.983 –15.3 400 0.972 –24.1 2.28 147.6 0.00533 78.0 0.980 –17.4 450 0.969 –27.0 2.26 143.6 0.00588 71.6 0.976 –19.6 500 0.954 –29.7 2.23 140.0 0.00617 69.5 0.971 –21.7 550 0.955 –32.8 2.19 135.9 0.00666 71.5 0.966 –23.7 600 0.941 –35.7 2.17 132.2 0.00672 70.6 0.960 –25.6 650 0.932 –38.3 2.14 128.6 0.00694 69.0 0.955 –27.8 700 0.924 –41.3 2.09 125.0 0.00709 71.4 0.948 –29.9 750 0.919 –44.1 2.07 121.5 0.00689 69.0 0.942 –31.8 800 0.905 –46.9 2.03 117.9 0.00699 68.9 0.937 –33.8 850 0.896 –49.2 2.00 114.7 0.00644 74.2 0.930 –35.8 900 0.884 –52.4 1.96 110.4 0.00633 75.5 0.923 –37.6 950 0.880 –54.7 1.93 107.1 0.00585 77.8 0.917 –39.8 1000 0.866 –57.7 1.89 103.8 0.00605 82.1 0.910 –41.9 7 3SK318 Package Dimensions Unit: mm 1.3 0.65 0.65 + 0.1 + 0.1 0.3 – 0.05 0.3 – 0.05 3 0.425 2.0 ±0.2 + 0.1 0.16 – 0.06 2.1 ±0.3 1.25 2 0 to 0.1 1 4 + 0.1 0.4 – 0.05 0.65 0.6 0.425 + 0.1 0.3 – 0.05 0.9 ±0.1 0.2 1.25 8 Hitachi Code CMPAK-4 SC-82AB EIAJ — JEDEC Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.