BB403M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-699A (Z) 2nd. Edition Nov. 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4R (SOT-143 var.) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 Notes: 1. Marking is “CX–”. 2. BB403M is individual type number of HITACHI BBFET. BB403M Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDS 7 V Gate1 to source voltage VG1S – 0/ +7 V Gate2 to source voltage VG2S – 0/ +7 V Drain current ID 25 mA Channel power dissipation Pch 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 7 — — V I D = 200µA VG1S = VG2S = 0 Gate1 to source breakdown voltage V(BR)G1SS +7 — — V I G1 = +10µA VG2S = VDS = 0 Gate2 to source breakdown voltage V(BR)G2SS +7 — — V I G2 = +10µA VG1S = VDS = 0 Gate1 to source cutoff current I G1SS — — +100 nA VG1S = +5V VG2S = VDS = 0 Gate2 to source cutoff current I G2SS — — +100 nA VG2S = +5V VG1S = VDS = 0 Gate1 to source cutoff voltage VG1S(off) 0.3 0.6 0.9 V VDS = 5V, VG2S = 4V I D = 100µA Gate2 to source cutoff voltage VG2S(off) 0.5 0.8 1.1 V VDS = 5V, VG1S = 5V I D = 100µA Drain current I D(op) 9 14 20 mA VDS = 5V, VG1 = 5V VG2S = 4V, RG = 470kΩ Forward transfer admittance |yfs| 35 42 50 mS VDS = 5V, VG1 = 5V VG2S =4V RG = 470kΩ, f = 1kHz Input capacitance c iss 2.6 3.3 4.0 pF VDS = 5V, VG1 = 5V Output capacitance c oss 1.7 2.1 2.5 pF VG2S =4V, RG = 470kΩ Reverse transfer capacitance c rss — 0.025 0.05 pF f = 1MHz Power gain PG1 28 32 — dB VDS = 5V, VG1 = 5V VG2S =4V, RG = 470kΩ Noise figure NF1 — 1.0 1.6 dB f = 200MHz Power gain PG2 12 16.5 — dB VDS = 5V, VG1 = 5V VG2S =4V, RG = 470kΩ Noise figure 2 NF2 — 2.85 3.7 dB f = 900MHz BB403M Main Characteristics Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG) VG2 VG1 RG Gate 2 Gate 1 Drain Source A ID Power Gain, Noise Figure Test Circuit 1000p 47k VT VG2 VT 1000p 1000p 47k 1000p 47k BBFET Output(50Ω) 1000p L2 Input(50Ω) L1 10p max 1000p 1000p 36p 1SV70 RG RFC 470k 1SV70 1000p V D = V G1 Unit Resistance (Ω) Capacitance (F) L1 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns L2 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns RFC : φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns 3 BB403M 900MHz Power Gain, Noise Test Circuit VD VG1 VG2 C6 C4 C5 R1 R2 C3 R3 RFC D G2 Output L3 G1 Input S L1 L2 C1 C1, C2 C3 C4 to C6 R1 R2 R3 L1: L4 C2 : : : : : : Variable Capacitor (10pF MAX) Disk Capacitor (1000pF) Air Capacitor (1000pF) 470 kΩ 47 kΩ 4.7 kΩ L2: 26 10 3 3 8 10 25 L4: L3: (φ1mm Copper wire) Unit : mm 18 10 10 7 7 29 RFC : φ1mm Copper wire with enamel 4turns inside dia 6mm 4 Drain Current 100 50 0 50 100 150 18 0k 22 Ω 27 0 kΩ 0 kΩ 15 10 5 Ta (°C) 1.4 V I D (mA) 1.2 V 10 1.1 V 1.0 V 0 VG1S = 0.9 V 1 2 3 Drain to Source Voltage 4 V DS 4V V DS = 5 V 1.3 V 15 1 2 3 Drain to Source Voltage 25 VG2S = 4 V 1.5 V 820 kΩ Ω 1.5 M Ω 2.2 M 4 5 V DS (V) Drain Current vs. Gate1 to Source Voltage Drain Current vs. Drain to Source Voltage 20 5 0 200 kΩ 0 33 kΩ 0 39 Ω 0k 47 kΩ 0 56 kΩ 0 8 6 G= 20 1 MΩ 25 I D (mA) V G2S = 4 V V G1 = VDS R 150 Ambient Temperature Drain Current Typical Output Characteristics 25 I D (mA) 200 Maximum Channel Power Dissipation Curve Drain Current Channel Power Dissipation Pch (mW) BB403M 2V 3.5 V 3V 15 1.5 V 10 5 VG2S = 1 V 5 (V) 20 2.5 V 0 4.0 8.0 1.2 Gate1 to Source Voltage 1.6 2.0 VG1S (V) 5 BB403M V 12 G1 V =5 V 4.5 4V V 3.5 3V I D (mA) 16 V DS = 5 V RG = 470 k Ω 20 Drain Current Drain Current I D (mA) 20 Drain Current vs. Gate2 to Source Voltage 8 4 0 1 2 3 Gate2 to Source Voltage 16 8 4 Drain Current vs. Gate1 Current 50 (µA) I G1 20 1 2 3 4 Gate1 Voltage V G1 (V) 5 Gate1 Current vs. Gate1 to Source Voltage V DS = 5 V V DS = 5 V VG2S = 4 V 15 Gate1 Current Drain Current I D (mA) 25 V DS = 5 V VG2S = 4 V R G = 470 kΩ 12 0 4 5 VG2S (V) Drain Current vs. Gate1 Voltage 10 5 40 4 V 3.5 V 30 3V 2.5 V 2V 20 1.5 V 10 VG2S = 1 V 0 6 10 20 Gate1 Current 30 I G1 40 (µA) 50 0 0.4 0.8 1.2 Gate1 to Source Voltage 1.6 2.0 V G1S (V) BB403M Gate1 Current vs. Gate2 to Source Voltage VG1 = 5 V 4.5 V 4V 6 3.5 V 3V 4 2.5 V 2V 2 0 Forward Transfer Admittance |y fs | (mS) Forward Transfer Admittance |y fs | (mS) 8 V DS = 5 V RG = 470 k Ω 50 40 1.0 2.0 3.0 Gate2 to Source Voltage Forward Transfer Admittance vs. Gate1 Voltage V DS = 5 V RG = 470 k Ω V DS = 5 V VG2S = 4 V 4V 3V 2.5 V 30 20 10 VG2S = 2 V 5 10 15 20 Drain Current I D (mA) 25 Power Gain vs. Gate Resistance 35 3V 2V 20 10 30 25 20 15 1V 1 2 3 4 Gate1 Voltage VG1 (V) 3.5 V 40 40 30 0 50 0 4.0 5.0 V G2S (V) Power Gain PG (dB) Gate1 Current I G1 (µA) 10 Forward Transfer Admittance vs. Drain Current 5 10 0.1 V DS = 5 V V G1 = 5 V V G2S = 4 V f = 200 MHz 0.2 0.5 1 2 5 10 Gate Resistance R G (M Ω ) 7 BB403M Power Gain vs. Drain Current Noise Figure vs. Gate Resistance 40 V DS = 5 V V G1 = 5 V V G2S = 4 V f = 200 MHz 3 Power Gain PG (dB) Noise Figure NF (dB) 4 2 1 35 30 25 20 15 0 0.1 0.2 0.5 1 2 5 10 0 10 Gate Resistance R G (M W ) Noise Figure vs. Drain Current 20 1 5 10 15 20 25 Drain Current I D (mA) 8 30 Power Gain PG (dB) Noise Figure NF (dB) V DS = 5 V V G1 = 5 V V G2S = 4 V R G = variable f = 200 MHz 2 0 5 10 15 20 25 30 Drain Current I D (mA) 4 3 V DS = 5 V V G1 = 5 V V G2S = 4 V R G = variable f = 200 MHz Power Gain vs. Gate Resistance 15 10 5 0 0.1 V DS = 5 V V G1 = 5 V V G2S = 4 V f = 900 MHz 0.2 0.5 1 2 5 10 Gate Resistance R G (M W ) BB403M Power Gain vs. Drain Current Noise Figure vs. Gate Resistance 20 Power Gain PG (dB) Noise Figure NF (dB) 4 3 2 V DS = 5 V V G1 = 5 V V G2S = 4 V f = 900 MHz 1 0 0.1 0.2 0.5 1 2 5 15 10 V DS = 5 V V G1 = 5 V V G2S = 4 V R G = variable f = 900 MHz 5 0 10 5 Gate Resistance R G (M W ) 20 25 30 Gain Reduction vs. Gate2 to Source Voltage 4 60 Gain Reduction GR (dB) Noise Figure NF (dB) 15 Drain Current I D (mA) Noise Figure vs. Drain Current 3 2 V DS = 5 V V G1 = 5 V V G2S = 4 V R G = variable f = 900 MHz 1 0 10 5 10 15 20 25 Drain Current I D (mA) V DS = V G1 = 5 V V G2S = 4 V R G = 470 k W f = 200 MHz 50 40 30 20 10 30 0 0 1 2 3 5 4 Gate2 to Source Voltage V G2S (V) 9 BB403M Gain Reduction vs. Gate2 to Source Voltage Drain Current vs. Gate Resistance 35 V DS = V G1 = 5 V V G2S = 4 V R G = 470 k W f = 900 MHz 40 Drain Current I D (mA) Gain Reduction GR (dB) 50 30 20 10 30 V DS = 5 V V G1 = 5 V V G2S = 4 V 25 20 15 10 5 0 1 2 3 4 5 Gate2 to Source Voltage V G2S (V) Input Capacitance vs. Gate2 to Source Voltage Input Capacitance Ciss (pF) 4 3 2 V DS = 5 V V G1 = 5 V V G2S = 4 V R G = 470 k W f = 1 MHz 1 0 1 2 3 Gate2 to Source Voltage V G2S (V) 10 4 0 0.1 0.2 0.5 1 2 5 Gate Resistance R G (M W) 10 BB403M S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 90° 1.5 Scale: 1 / div. 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° –10 –5 –4 –.2 –3 –.4 –30° –150° –2 –.6 –.8 –1 –90° Test Condition : V DS = 5 V , V G1 = 5 V V G2S = 4 V , R G = 470 k Ω Zo =50 Ω 50 to 1000 MHz (50 MHz step) Test Condition : V DS = 5 V , V G1 = 5 V V G2S = 4 V , R G = 470 k Ω Zo =50 Ω 50 to 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90° S22 Parameter vs. Frequency Scale: 0.002 / div. .8 60° 120° –60° –120° –1.5 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1 1.5 2 3 45 10 –10 –5 –4 –.2 –30° –150° –3 –.4 –60° –120° –90° Test Condition : V DS = 5 V , V G1 = 5 V V G2S = 4 V , R G = 470 k Ω Zo =50 Ω 50 to 1000 MHz (50 MHz step) –2 –.6 –.8 –1 –1.5 Test Condition : V DS = 5 V , V G1 = 5 V V G2S = 4 V , R G = 470 k Ω Zo =50 Ω 50 to 1000 MHz (50 MHz step) 11 BB403M Sparameter (VDS = VG1 = 5V, VG2S = 4V, RG = 470kΩ, Zo = 50Ω) S11 S21 S12 S22 f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 50 0.947 –7.0 4.11 174.4 0.00400 89.0 0.985 –3.1 100 0.978 –11.9 4.13 167.1 0.00305 116.5 0.985 –6.8 150 0.973 –18.7 4.04 159.8 0.00266 75.5 0.982 –10.1 200 0.960 –23.8 4.01 152.7 0.00384 66.8 0.978 –13.5 250 0.956 –29.6 3.90 146.4 0.00453 70.1 0.970 –16.8 300 0.939 –35.5 3.85 139.9 0.00440 59.6 0.965 –20.0 350 0.930 –40.3 3.68 133.6 0.00550 67.2 0.957 –23.1 400 0.905 –45.7 3.63 128.3 0.00571 59.0 0.949 –26.2 450 0.889 –50.3 3.45 122.7 0.00583 54.2 0.940 –29.2 500 0.870 –55.6 3.35 116.6 0.00634 51.6 0.932 –32.1 550 0.855 –59.6 3.22 111.5 0.00596 56.2 0.924 –35.0 600 0.841 –63.9 3.10 106.3 0.00591 55.7 0.917 –37.7 650 0.826 –67.9 3.02 101.4 0.00544 54.9 0.908 –40.5 700 0.812 –71.8 2.89 96.1 0.00533 57.2 0.900 –43.1 750 0.799 –75.6 2.78 91.8 0.00495 64.6 0.893 –45.7 800 0.788 –78.9 2.70 87.5 0.00470 66.5 0.887 –48.1 850 0.778 –82.6 2.60 82.2 0.00460 75.1 0.880 –50.6 900 0.765 –85.8 2.48 78.1 0.00445 83.8 0.874 –52.9 950 0.763 –88.8 2.41 74.2 0.00486 97.0 0.869 –55.3 1000 0.748 –92.2 2.34 69.7 0.00502 102.6 0.864 –57.5 12 BB403M Package Dimensions Unit: mm 1.9 ±0.2 0.95 0.95 + 0.1 + 0.1 0.4 – 0.05 0.4 – 0.05 4 0.65 ± 0.1 2.95 ±0.2 + 0.1 0.16 – 0.06 2.8 ± 0.2 1.5 ± 0.15 3 0 ~ 0.1 + 0.1 0.85 0.65 0.4 – 0.05 ± 0.1 2 1 + 0.1 0.6 – 0.05 0.95 1.1 ± 0.1 0.8 1.8 Hitachi Code EIAJ JEDEC MPAK–4R — — 13 BB403M Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, CA 94005-1897 Tel: <1> (800) 285-1601 Fax: <1> (303) 297-0447 Hitachi Europe GmbH Electronic components Group Dornacher Straße 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 14