Index of /ds/FZ/ Name Last modified Size Parent Directory FZT560.pdf 03-Dec-99 15:45 44K FZT560A.pdf 03-Dec-99 15:45 44K FZT649.pdf 22-Dec-99 00:08 28K FZT660.pdf 03-Dec-99 15:45 44K FZT660A.pdf 03-Dec-99 15:45 44K FZT749.pdf 22-Dec-99 00:08 27K FZT790A.pdf 22-Dec-99 00:08 44K Description FZT560/FZT560A Discrete Power & Signal Technologies July 1998 FZT560 / FZT560A C B C E SOT-223 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter FZT560/FZT560A Units VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current - Continuous 3 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Max Characteristic Symbol Units FZT560/FZT560A PD Total Device Dissipation RθJA Thermal Resistance, Junction to Ambient 1998 Fairchild Semiconductor Corporation 2 W 62.5 °C/W Page 1 of 2 fzt560.lwpPrNA 7/10/98 revC Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO Collector-Emitter Breakdown Voltage IC = 10 mA 60 V BVCBO Collector-Base Breakdown Voltage IC = 100 µA 80 V BVEBO Emitter-Base Breakdown Voltage IE = 100 µA 5 V ICBO Collector Cutoff Current VCB = 30 V 100 VCB = 30 V, TA=100°C 10 nA uA VEB = 4V 100 nA IEBO Emitter Cutoff Current ON CHARACTERISTICS* hFE VCE(sat) DC Current Gain Collector-Emitter Saturation Voltage IC = 100 mA, VCE = 2 V 70 - IC = 500 mA, VCE = 2 V FZT560 FZT560A 100 300 250 550 IC = 1 A, VCE = 2 V 80 IC = 3 A, VCE = 2 V 25 IC = 1 A, IB = 100 mA 300 IC = 3 A, IB = 300 mA 450 VBE(sat) Base-Emitter Saturation Voltage IC = 1 A, IB = 100 mA VBE(on) Base-Emitter On Voltage FZT560 FZT560A mV 400 1.25 V IC = 1 A, VCE = 2 V 1 V 30 pF SMALL SIGNAL CHARACTERISTICS Cobo Output Capacitance VCB = 10 V, IE = 0, f = 1MHz fT Transition Frequency IC = 100 mA,VCE = 5 V, f=100MHz 75 - *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% 1998 Fairchild Semiconductor Corporation Page 2 of 2 fzt560.lwpPrNA 7/10/98 revC FZT560/FZT560A NPN Low Saturation Transistor (continued) July 1998 FZT649 C B C E SOT-223 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* TA = 25°C unless otherwise noted FZT649 Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 35 V VEBO Emitter-Base Voltage 5 V IC Collector Current - Continuous 3 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Parameter *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Max Characteristic Symbol Units FZT649 PD Total Device Dissipation RθJA Thermal Resistance, Junction to Ambient 1998 Fairchild Semiconductor Corporation 2 W 62.5 °C/W Page 1 of 2 fzt649.lwpPrNC 7/10/98 revB FZT649 Discrete Power & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO Collector-Emitter Breakdown Voltage IC = 10 mA 25 V BVCBO Collector-Base Breakdown Voltage IC = 100 µA 35 V BVEBO Emitter-Base Breakdown Voltage IE = 100 µA 5 V ICBO Collector Cutoff Current VCB = 30 V 100 VCB = 30 V, TA=100°C 10 nA uA VEB = 4V 100 nA IEBO Emitter Cutoff Current ON CHARACTERISTICS* hFE VCE(sat) DC Current Gain Collector-Emitter Saturation Voltage IC = 50 mA, VCE = 2 V 70 IC = 1 A, VCE = 2 V 100 IC = 2 A, VCE = 2 V 75 IC = 6 A, VCE = 2 V 15 300 IC = 1 A, IB = 100 mA 300 mV IC = 3 A, IB = 300 mA 600 1.25 V VBE(sat) Base-Emitter Saturation Voltage IC = 1 A, IB = 100 mA VBE(on) Base-Emitter On Voltage IC = 1 A, VCE = 2 V 1 V 50 pF SMALL SIGNAL CHARACTERISTICS Cobo Output Capacitance VCB = 10 V, IE = 0, f = 1MHz fT Transition Frequency IC = 100 mA,VCE = 5 V, f=100MHz 150 - *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% 1998 Fairchild Semiconductor Corporation Page 2 of 2 fzt649.lwpPrNC 7/10/98 revB FZT649 NPN Low Saturation Transistor 1998 Fairchild Semiconductor Corporation Page 3 of 2 fzt649.lwpPrNC 7/10/98 revB FZT660/FZT660A Discrete Power & Signal Technologies July 1998 FZT660 / FZT660A C B C E SOT-223 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter FZT660/FZT660A Units VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current - Continuous 3 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Max Characteristic Symbol Units FZT660/FZT660A PD Total Device Dissipation RθJA Thermal Resistance, Junction to Ambient 1998 Fairchild Semiconductor Corporation 2 W 62.5 °C/W Page 1 of 2 fzt660.lwpPrPA 7/10/98 revC Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO Collector-Emitter Breakdown Voltage IC = 10 mA 60 V BVCBO Collector-Base Breakdown Voltage IC = 100 µA 80 V BVEBO Emitter-Base Breakdown Voltage IE = 100 µA 5 V ICBO Collector Cutoff Current VCB = 30 V 100 VCB = 30 V, TA=100°C 10 nA uA VEB = 4V 100 nA IEBO Emitter Cutoff Current ON CHARACTERISTICS* hFE VCE(sat) DC Current Gain Collector-Emitter Saturation Voltage IC = 100 mA, VCE = 2 V 70 - IC = 500 mA, VCE = 2 V FZT660 FZT660A 100 300 250 550 IC = 1 A, VCE = 2 V 80 IC = 3 A, VCE = 2 V 25 IC = 1 A, IB = 100 mA 300 IC = 3 A, IB = 300 mA 550 VBE(sat) Base-Emitter Saturation Voltage IC = 1 A, IB = 100 mA VBE(on) Base-Emitter On Voltage FZT660 FZT660A mV 500 1.25 V IC = 1 A, VCE = 2 V 1 V 45 pF SMALL SIGNAL CHARACTERISTICS Cobo Output Capacitance VCB = 10 V, IE = 0, f = 1MHz fT Transition Frequency IC = 100 mA,VCE = 5 V, f=100MHz 75 - *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Page 2 of 2 fzt660.lwpPrPA 7/10/98 revC FZT660/FZT660A PNP Low Saturation Transistor (continued) July 1998 FZT749 C B C E SOT-223 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter FZT749 Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 35 V VEBO Emitter-Base Voltage 5 V IC Collector Current - Continuous 3 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Max Characteristic Symbol Units FZT749 PD Total Device Dissipation RθJA Thermal Resistance, Junction to Ambient 1998 Fairchild Semiconductor Corporation 2 W 62.5 °C/W Page 1 of 2 fzt749.lwpPrPC 7/10/98 revB FZT749 Discrete Power & Signal Technologies Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO Collector-Emitter Breakdown Voltage IC = 10 mA 25 V BVCBO Collector-Base Breakdown Voltage IC = 100 µA 35 V BVEBO Emitter-Base Breakdown Voltage IE = 100 µA 5 V ICBO Collector Cutoff Current VCB = 30 V 100 VCB = 30 V, TA=100°C 10 nA uA VEB = 4V 100 nA IEBO Emitter Cutoff Current ON CHARACTERISTICS* hFE VCE(sat) DC Current Gain Collector-Emitter Saturation Voltage IC = 50 mA, VCE = 2 V 70 - IC = 1 A, VCE = 2 V 100 IC = 2 A, VCE = 2 V 75 IC = 6 A, VCE = 2 V 15 300 IC = 1 A, IB = 100 mA 300 IC = 3 A, IB = 300 mA 600 1.25 V 1 V 100 pF VBE(sat) Base-Emitter Saturation Voltage IC = 1 A, IB = 100 mA VBE(on) Base-Emitter On Voltage IC = 1 A, VCE = 2 V mV SMALL SIGNAL CHARACTERISTICS Cobo Output Capacitance VCB = 10 V, IE = 0, f = 1MHz fT Transition Frequency IC = 100 mA,VCE = 5 V, f=100MHz 100 - *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Page 2 of 2 fzt749.lwpPrPC 7/10/98 revB FZT749 PNP Low Saturation Transistor (continued) FZT790A Discrete Power & Signal Technologies July 1998 FZT790A C B C E SOT-223 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter FZT790A Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current - Continuous 3 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Max Characteristic Symbol Units FZT790A PD Total Device Dissipation RθJA Thermal Resistance, Junction to Ambient 1998 Fairchild Semiconductor Corporation 2 W 62.5 °C/W Page 1 of 2 fzt790a.lwpPrPA 7/10/98 revB Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO Collector-Emitter Breakdown Voltage IC = 10 mA 40 V BVCBO Collector-Base Breakdown Voltage IC = 100 µA 50 V BVEBO Emitter-Base Breakdown Voltage IE = 100 µA 5 V ICBO Collector Cutoff Current VCB = 30 V 100 VCB = 30 V, TA=100°C 10 nA uA VEB = 4V 100 nA 800 - IC = 500 mA, IB = 5 mA 250 mV IC = 1 A, IB = 10 mA 450 IC = 2 A, IB = 50 mA 750 IC = 1 A, IB = 10 mA 1 IEBO Emitter Cutoff Current ON CHARACTERISTICS* hFE VCE(sat) VBE(sat) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 10 mA, VCE = 2 V 300 IC = 500 mA, VCE = 2 V 250 IC = 1 A, VCE = 2 V 200 IC = 2 A, VCE = 2 V 150 V SMALL SIGNAL CHARACTERISTICS fT Transition Frequency IC = 50 mA,VCE = 5 V, f=50MHz 100 - *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Page 2 of 2 fzt790a.lwpPrPA 7/10/98 revB FZT790A PNP Low Saturation Transistor (continued)