PN4275 C TO-92 BE NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 15 VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.5 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units PN4275 350 2.8 125 mW mW/°C °C/W 357 °C/W PN4275 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 10 mA, I B = 0 15 V V(BR)CBO Collector-Base Breakdown Voltage I C = 10 µA, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 10 µA, I C = 0 4.5 V V(BR)CES Collector-Emitter Breakdown Voltage I C = 10 µA, IB = 0 40 V IB Base Cutoff Current VCE = 20 V 0.4 µA ICBO Collector Cutoff Current VCB = 20 V, IE = 0, TA = 65 °C 10 µA ON CHARACTERISTICS* hFE DC Current Gain VCE( sat) Collector-Emitter Saturation Voltage VBE( sat) Base-Emitter Saturation Voltage IC = 10 mA, VCE = 1.0 V IC = 30 mA, VCE = 0.4 V IC = 100 mA, VCE = 1.0 V IC = 10 mA, IB = 1.0 mA IC = 30 mA, IB = 3.0 mA IC = 10 mA, IB = 3.3 mA IC = 100 mA, I B = 10 mA IC = 10 mA, IB = 1.0 mA, TA = 65 °C IC = 10 mA, IB = 1.0 mA IC = 30 mA, IB = 3.0 mA IC = 10 mA, IB = 3.3 mA IC = 100 mA, I B = 10 mA 35 30 18 0.72 0.74 120 0.20 0.25 0.18 0.50 V V V V 0.30 0.85 1.15 1.0 1.6 V V V V V 4.0 pF ns SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance VCB = 5.0 V, f = 1.0 MHz hfe Small-Signal Current Gain IC = 10 mA, VCE = 10 V, f = 100 MHz 4.0 SWITCHING CHARACTERISTICS ton Turn-on Time VCC = 3.0 V, IC = 10 mA, 12 td Delay Time I B1 = 3.3 mA, 9.0 ns tr Rise Time ns toff Turn-off Time VBE (off) = -3.0 V VCC = 3.0 V, IC = 10 mA 7.0 12 ns ts Storage Time I B1 = IB2 = 3.3 mA 8.0 ns tf Fall Time ns Storage Time VBE (off) = -3.0 V I C = IB1 = IB2 = 10 mA 8.0 ts 13 ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% PN4275 NPN Switching Transistor