HS4N65FA PP0640SA - PP3500SC N-CHANNEL POWER MOSFET D DESCRIPTION G This MOSFET is produced with advanced VDMOS technology of SEMIWILL. This technology enable power MOSFET to have better characteristics , such as fast switching time , low on resistance, low gate charge and especially excellent avalanche characteristics . This power MOSFET is usually used at high efficient DC to DC converter block and SMPS. It’s typical application is TV and monitor. S SCHEMATIC SYMBOL FEATURES • High ruggedness • R DS(ON) (Max. 2.0Ω)@V GS =10V • Gate Charge (Max.18nC) • Improved dv/dt Capability • 100% Avalanche Tested GD S TO-220F PACKAGE 650 4.0 2.6 16 ±30 164 10.6 4.5 40 0.32 300 3.16 62.5 05081.R11 2/11 REV.1205B2 Page 1 www.protekdevices.com lizhenhui mb:+86-13537087568 E-mail:[email protected] 1 PP0640SA - PP3500SC HS4N65FA V GS =0V,I D =250uA 650 V DS =650V,V GS =0V V DS =520V,T C =125 C 10 V DS =30V,V GS =0V V DS =-30V,V GS =0V V DS =V GS ,I D =250uA 2.0 4.0 V GS =10V,I D =2.0A V GS =0V,V DS =25V,f=1MHz V DS =320V,I D =4.0A,R G =25ohm (note 4,5) V DS =520V,V GS =10V,I D =4.0A (note 4,5) 2.6 570 740 70 90 20 24 21 52 46 102 102 214 34 78 18 25 3.0 6.0 Integral reverse p-n Junction diode in the MOSFET 4.0 I S =4.0A, V GS =0V 1.4 I S =4.0A, V GS =0V dI F /d t =100A/us 16 390 1.6 Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 25mH, I AS = 4.0A, V DD = 50V, R G =25Ω, Starting T J = 25 C 3. I SD≤ 4.0A, di/dt = 100A/us, V DD≤ BV DSS , Staring T J =25 C 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. 05081.R11 REV.1205B22/11 Page 1 www.protekdevices.com lizhenhui mb:+86-13537087568 E-mail:[email protected] 2 PP0640SA - PP3500SC HS4N65FA 05081.R11 REV.1205B22/11 Page 1 www.protekdevices.com lizhenhui mb:+86-13537087568 E-mail:[email protected] 3 PP0640SA - PP3500SC HS4N65FA PACKAGE DIMENSIONS TO-220F Symbol Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 A1 2.60 2.80 0.102 0.110 A2 2.45 2.55 0.096 0.100 0.030 b 0.50 0.75 0.020 b1 1.10 1.40 0.043 0.055 C 0.50 0.70 0.020 0.028 D 9.70 10.30 0.382 0.406 E 14.70 15.30 0.579 0.602 e 2.54TYP 0.10TYP e1 4.88 5.28 0.192 0.208 H 27.40 28.60 1.079 1.126 L 2.50 3.00 0.098 0.118 L1 6.70 6.90 0.264 0.272 L2 3.60 3.80 0.142 0.150 www.protekdevices.com REV.1205B2 lizhenhui mb:+86-13537087568 E-mail:[email protected] 4