2SA1 298 TRANSISTOR(PNP) SOT–23 FEATURES Low Frequency Power Amplifier Application Power Swithing Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -800 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Collector-base breakdown voltage V(BR)CBO IC=-1mA, IE=0 -35 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA, IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA, IC=0 -5 V Collector cut-off current ICBO VCB=-30V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 μA hFE(1) VCE=-1V, IC=-100mA 100 hFE(2) VCE=-1V, IC=-800mA 40 DC current gain Collector-emitter saturation voltage VCE(sat) conditions IC=-500mA, IB=-20mA Min Typ Max Unit 320 -0.5 -0.8 V -0.5 V Base-emitter voltage VBE VCB=-1V,IC=-10mA, Transition frequency fT VCE=-5V,IC=-10mA 120 MHz VCB=-10V, IE=0, f=1MHz 13 pF Collector output capacitance Cob CLASSIFICATION OF hFE(1) RANK O Y RANGE 100–200 160–320 MARKING IO IY １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５