KTC3879 TRANSISTOR (NPN) SOT–23 FEATURES High Power Gain APPLICATIONS High Frequency Application HF,VHF Band Amplifier Application 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current 50 mA PC Collector Power Dissipation 150 mW Thermal Resistance From Junction To Ambient 833 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC=100µA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 4 V Collector cut-off current ICBO VCB=30V, IE=0 0.1 µA Collector cut-off current ICEO VCE=25V, IB=0 0.2 µA Emitter cut-off current IEBO VEB=4V, IC=0 1 µA DC current gain hFE VCE=12V, IC=2mA Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA 0.4 V Base-emitter saturation voltage VBE(sat) IC=10m A, IB=1mA 1 V fT VCE=10V,IC=1mA Transition frequency conditions Min 40 Typ Max 240 100 MHz CLASSIFICATION OF hFE RANK R O Y RANGE 40–80 70–140 120–240 MARKING RR RO RY １ JinYu semiconductor Unit www.htsemi.com Ｄａｔｅ：２０１１／０５