2SC1654 TRANSISTOR(NPN) SOT–23 FEATURES High Frequency Power Amplifier Application Power Swithing Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1. BASE Value Unit 3. COLLECTOR VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current 50 mA PC Collector Power Dissipation 150 mW Thermal Resistance From Junction To Ambient 833 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 2. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 180 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 160 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=130V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 µA hFE(1) VCE=3V, IC=15mA 90 hFE(2) VCE=3V, IC=1mA 70 DC current gain conditions Min Typ Max Unit 400 Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=50mA, IB=5mA 1 V fT VCE=10V,IC=10mA 120 MHz VCB=10V, IE=0, f=1MHz 2.3 pF Transition frequency Cob Collector output capacitance CLASSIFICATION OF hFE(1) RANK N5 N6 N7 RANGE 90–180 135–270 200–400 MARKING N5 N6 N7 １ JinYu semiconductor www.htsemi.com