VS-GB150LH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 150 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD Double INT-A-PAK • Isolated copper baseplate using DCB (Direct Copper Bonding) technology • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRODUCT SUMMARY • AC inverter drives VCES 1200 V IC at TC = 80 °C 150 A VCE(on) (typical) at IC = 150 A, 25 °C 1.87 V Speed 8 kHz to 30 kHz • Switching mode power supplies • Electronic welders DESCRIPTION Package Double INT-A-PAK Circuit Chopper low side switch Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as general inverters and UPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MAX. Collector to emitter voltage VCES 1200 Gate to emitter voltage VGES ± 20 Collector current Pulsed collector current IC ICM (1) UNITS V TC = 25 °C 300 TC = 80 °C 150 tp = 1 ms 300 TC = 80 °C 150 A Diode continuous forward current IF Diode maximum forward current IFM tp = 1 ms 300 Maximum power dissipation PD TJ = 150 °C 1389 W tSC TJ = 125 °C Short circuit withstand time RMS isolation voltage I2t-value, diode VISOL I2t 10 μs f = 50 Hz, t = 1 min 2500 V VR = 0 V, t = 10 ms, TJ = 125 °C 4800 A2s Note (1) Repetitive rating: pulse width limited by maximum junction temperature. Revision: 10-Jun-15 Document Number: 94757 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB150LH120N www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES Collector to emitter voltage VCE(on) Gate to emitter threshold voltage VGE(th) TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 150 A, TJ = 25 °C - 1.87 - VGE = 15 V, IC = 150 A, TJ = 125 °C - 2.08 - VCE = VGE, IC = 12.0 mA, TJ = 25 °C 5.0 6.3 7.0 UNITS V Collector cut-off current ICES VCE = VCES, VGE = 0 V, TJ = 25 °C - - 1.0 mA Gate to emitter leakage current IGES VGE = VGES, VCE = 0 V, TJ = 25 °C - - 400 nA UNITS SWITCHING CHARACTERISTICS PARAMETER Turn-on delay time Rise time Turn-off delay time SYMBOL MIN. TYP. MAX. td(on) - 190 - tr - 60 - - 460 - td(off) TEST CONDITIONS VCC = 600 V, IC = 150 A, Rg = 6.8 , VGE = ± 15 V, TJ = 25 °C - 55 - Turn-on switching loss Eon - 11.2 - Turn-off switching loss Eoff - 9.8 - Turn-on delay time td(on) - 220 - tr - 60 - - 530 - Fall time Rise time Turn-off delay time Fall time tf td(off) tf VCC = 600 V, IC = 150 A, Rg = 6.8 , VGE = ± 15 V, TJ = 125 °C - 75 - Turn-on switching loss Eon - 16.7 - Turn-off switching loss Eoff - 15.3 - Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres SC data Internal gate resistance Stray inductance Module lead resistance, terminal to chip ISC VGE = 0 V, VCE = 25 V, f = 1.0 MHz tsc 10 μs, VGE = 15 V, TJ = 125 °C, VCC = 900 V, VCEM 1200 V Rgint LCE RCC’+EE’ TC = 25 °C ns mJ ns mJ - 10.6 - - 0.71 - - 0.47 - - 650 - A - 1.5 - - - 20 nH - 0.35 - m UNITS nF DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Diode forward voltage VF Diode reverse recovery charge Qrr Diode peak reverse recovery current Irr Diode reverse recovery energy Erec TEST CONDITIONS IF = 150 A IF = 150 A, VR = 600 V, dI/dt = -4800 A/μs, VGE = -15 V MIN. TYP. MAX. TJ = 25 °C - 2.05 - TJ = 125 °C - 2.26 - TJ = 25 °C - 7 - TJ = 125 °C - 18 - TJ = 25 °C - 150 - TJ = 125 °C - 190 - TJ = 25 °C - 4.0 - TJ = 125 °C - 8.0 - V μC A mJ Revision: 10-Jun-15 Document Number: 94757 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB150LH120N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. TJ -40 - 150 TSTG -40 - 125 - - 0.09 - - 0.24 - 0.035 - Operating junction temperature range Storage temperature range TEST CONDITIONS °C IGBT (per 1/2 module) Junction to case Diode (per 1/2 module) Case to sink RthJC Conductive grease applied RthCS Power terminal screw: M6 2.5 to 5.0 Mounting screw: M6 3.0 to 6.0 Mounting torque 300 300 g 60 VCC = 600 V Rg = 6.8 Ω VGE = ± 15 V TJ = 125 °C VGE = 15 V 250 50 150 Eon, Eoff (mJ) 25 °C 200 IC (A) K/W Nm Weight 125 °C 100 Eon 40 30 Eoff 20 10 50 0 0 0 1 2 3 4 0 100 200 300 VCE (V) IC (A) Fig. 1 - Typical Output Characteristics Fig. 3 - Switching Loss vs. Collector Current 60 400 VGE = 15 V VCC = 600 V IC = 150 A VGE = ± 15 V TJ = 125 °C 50 300 Eon, Eoff (mJ) 125 °C IC (A) UNITS 25 °C 200 40 Eon 30 Eoff 20 100 10 0 0 0 2 4 6 8 10 12 14 0 10 20 30 40 50 VGE (V) Rg (Ω) Fig. 2 - Typical Transfer Characteristics Fig. 4 - Switching Loss vs. gate Resistor Revision: 10-Jun-15 Document Number: 94757 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB150LH120N www.vishay.com Vishay Semiconductors 20 103 VCC = 600 V td(off) td(on) t (ns) VGE (V) 15 10 102 tr tf 5 VCC = 600 V Rg = 6.8 Ω VGE = ± 15 V TJ = 125 °C IC = 150 A TJ = 25 °C 0 0 0.2 0.4 0.6 0.8 1 1.2 101 1.4 0 100 200 300 QG (μC) IC (A) Fig. 5 - Gate Charge Characteristics Fig. 7 - Typical Switching Times vs. IC 102 104 VCC = 600 V IC = 150 A VGE = ± 15 V TJ = 125 °C Cies 101 td(off) 103 C (nF) t (ns) td(on) Coes tr 102 100 tf Cres 101 10-1 0 5 10 15 20 25 30 0 35 20 40 60 VCE (V) Rg (Ω) Fig. 6 - Typical Capacitance vs. Collector to Emitter Voltage Fig. 8 - Typical Switching Times vs. Gate Resistance Rg 300 250 25 °C IF (A) 200 150 125 °C 100 50 0 0 1 2 3 4 VF (V) Fig. 9 - Typical Forward Characteristics, Diode Revision: 10-Jun-15 Document Number: 94757 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB150LH120N www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance (K/W) 100 Diode 10-1 IGBT 10-2 10-3 10-4 10-5 10-4 10-2 10-3 10-1 100 tp (s) Fig. 10 - Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95525 Revision: 10-Jun-15 Document Number: 94757 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000