VS-GB200LH120N Datasheet

VS-GB200LH120N
www.vishay.com
Vishay Semiconductors
Molding Type Module IGBT,
Chopper in 1 Package, 1200 V and 200 A
FEATURES
• High short circuit capability, self limiting to 6 x IC
• 10 μs short circuit capability
• VCE(on) with positive temperature coefficient
• Maximum junction temperature 150 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
Double INT-A-PAK
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
VCES
1200 V
TYPICAL APPLICATIONS
IC at TC = 80 °C
200 A
• AC inverter drives
VCE(on) (typical)
at IC = 200 A, 25 °C
2.07 V
• Switching mode power supplies
Speed
8 kHz to 30 kHz
Package
Double INT-A-PAK
Circuit
Chopper low side switch
• Electronic welders
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
Collector to emitter voltage
VCES
1200
Gate to emitter voltage
VGES
± 20
Collector current
Pulsed collector current
IC
ICM
(1)
UNITS
V
TC = 25 °C
370
TC = 80 °C
200
tp = 1 ms
400
TC = 80 °C
200
A
Diode continuous forward current
IF
Diode maximum forward current
IFM
tp = 1 ms
400
Maximum power dissipation
PD
TJ = 150 °C
1562
W
tSC
TJ = 125 °C
Short circuit withstand time
RMS isolation voltage
I2t-value, diode
VISOL
I2t
10
μs
f = 50 Hz, t = 1 min
2500
V
VR= 0 V, t = 10 ms, TJ = 125 °C
6900
A2s
Note
(1) Repetitive rating: pulse width limited by maximum junction temperature.
Revision: 10-Jun-15
Document Number: 94761
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB200LH120N
www.vishay.com
Vishay Semiconductors
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
Collector to emitter breakdown voltage
SYMBOL
V(BR)CES
TEST CONDITIONS
TJ = 25 °C
MIN.
TYP.
MAX.
1200
-
-
VGE = 15 V, IC = 200 A, TJ = 25 °C
-
2.07
-
VGE = 15 V, IC = 200 A, TJ = 125 °C
-
-
-
5.0
6.35
7.0
UNITS
Collector to emitter voltage
VCE(on)
V
Gate to emitter threshold voltage
VGE(th)
VCE = VGE, IC = 4 mA, TJ = 25 °C
Collector cut-off current
ICES
VCE = VCES, VGE = 0 V, TJ = 25 °C
-
-
0.1
μA
Gate to emitter leakage current
IGES
VGE = VGES, VCE = 0 V, TJ = 25 °C
-
-
400
nA
UNITS
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on delay time
Rise time
Turn-off delay time
SYMBOL
MIN.
TYP.
MAX.
td(on)
-
110
-
tr
-
60
-
-
360
-
td(off)
TEST CONDITIONS
VCC = 600 V, IC = 200 A, Rg = 5 ,
VGE = ± 15 V, TJ = 25 °C
-
60
-
Turn-on switching loss
Eon
-
18
-
Turn-off switching loss
Eoff
-
15
-
Turn-on delay time
td(on)
-
120
-
tr
-
60
-
-
420
-
Fall time
Rise time
Turn-off delay time
Fall time
tf
td(off)
tf
VCC = 600 V, IC = 200 A, Rg = 5 ,
VGE = ± 15 V, TJ = 125 °C
-
70
-
Turn-on switching loss
Eon
-
21
-
Turn-off switching loss
Eoff
-
18
-
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
SC data
Internal gate resistance
Stray inductance
Module lead resistance, terminal to chip
ISC
VGE = 0 V, VCE = 25 V, f = 1.0 MHz
tsc  10 μs, VGE = 15 V, TJ = 125 °C, 
VCC = 900 V, VCEM  1200 V
Rgint
LCE
RCC’+EE’
TC = 25 °C
ns
mJ
ns
mJ
-
18.0
-
-
1.64
-
-
0.72
-
-
1080
-
A
-
2
-

-
-
20
nH
-
0.35
-
m
UNITS
nF
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Diode forward voltage
VF
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current
Irr
Diode reverse recovery energy
Erec
TEST CONDITIONS
IF = 200 A
IF = 200 A, VR = 600 V,
dI/dt = - 6000 A/μs,
VGE = -15 V
MIN.
TYP.
MAX.
TJ = 25 °C
-
2.33
-
TJ = 125 °C
-
-
-
TJ = 25 °C
-
24
-
TJ = 125 °C
-
32
-
TJ = 25 °C
-
240
-
TJ = 125 °C
-
280
-
TJ = 25 °C
-
6
-
TJ = 125 °C
-
10
-
V
μC
A
mJ
Revision: 10-Jun-15
Document Number: 94761
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB200LH120N
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
TJ
-40
-
150
TSTG
-40
-
125
-
-
0.08
-
-
0.17
-
0.035
-
Operating junction temperature range
Storage temperature range
TEST CONDITIONS
°C
IGBT (per 1/2 module)
Junction to case
Diode (per 1/2 module)
Case to sink
RthJC
Conductive grease applied
RthCS
Power terminal screw: M6
2.5 to 5.0
Mounting screw: M6
3.0 to 6.0
Mounting torque
K/W
Nm
Weight
300
g
35
400
VCE = 20 V
VCC = 600 V
Rg = 5 Ω
VGE = ± 15 V
TJ = 125 °C
30
300
25 °C
Eon, Eoff (mJ)
IC (A)
UNITS
125 °C
200
25
Eon
20
Eoff
15
10
100
5
0
0
0
5
10
0
15
200
300
400
VGE (V)
IC (A)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Switching Loss vs. Collector Current
400
80
VGE = 15 V
350
25 °C
VCC = 600 V
IC = 200 A
VGE = ± 15 V
TJ = 125 °C
60
Eon, Eoff (mJ)
300
250
IC (A)
100
200
125 °C
150
100
Eon
40
Eoff
20
50
0
0
0
1
2
VCE (V)
Fig. 2 - Typical Transfer Characteristics
3
0
10
20
30
40
Rg (Ω)
Fig. 4 - Switching Loss vs. Gate Resistor
Revision: 10-Jun-15
Document Number: 94761
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB200LH120N
www.vishay.com
Vishay Semiconductors
20
103
VCC = 600 V
td(off)
t (ns)
VGE (V)
10
td(on)
102
tr
0
tf
VCC = 600 V
Rg = 5 Ω
VGE = ± 15 V
TJ = 125 °C
IC = 200 A
TJ = 25 °C
- 10
2
1
0
101
3
0
100
Qg (μC)
200
300
400
IC (A)
Fig. 5 - Gate Charge Characteristics
Fig. 7 - Typical Switching Time vs. IC
102
104
VCC = 600 V
IC = 200 A
VGE = ± 15 V
TJ = 125 °C
Cies
101
Coes
100
td(off)
t (ns)
C (nF)
103
td(on)
tr
102
Cres
tf
10-1
0
10
20
30
101
40
0
10
VCE (V)
20
30
40
Rg (Ω)
Fig. 8 - Typical Switching Time vs. Gate Resistance Rg
Fig. 6 - Typical Capacitance vs. Collector to Emitter Voltage
400
300
IF (A)
25 °C
200
125 °C
100
0
0
1
2
3
4
VF (V)
Fig. 9 - Diode Forward Characteristics
Revision: 10-Jun-15
Document Number: 94761
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB200LH120N
www.vishay.com
Vishay Semiconductors
ZthJC - Thermal Impedance (K/W)
100
Diode
10
-1
IGBT
10-2
10-3
10-4
10-5
10-5
10-4
10-2
10-3
10-1
100
tp (s)
Fig. 10 - Transient Thermal Impedance
CIRCUIT CONFIGURATION
6
7
1
2
3
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95525
Revision: 10-Jun-15
Document Number: 94761
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Double INT-A-PAK
DIMENSIONS in millimeters (inches)
26
23 ± 0.3
6
7.2 ± 0.6
31 ± 0.5
2.8 x 0.5
16
3-M6
30.5 ± 0.5
Mounting depth max. 11
Ø
6.
4
±
28 ± 0.3
28 ± 0.3
20.1
0.
2
6
22
35.4
27 ± 0.4
3
15 ± 0.4
2
30
48 ± 0.4
61.4
1
6
93 ± 0.4
106.4
Revision: 27-May-13
Document Number: 95525
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000