SI230 6 N-Channel Enhancement Mode Field Effect Transistor z Rating 94V-0 Features Moisture Sensitivity: Level 1 per J-STD-020C VDS (V) = 20 V Terminals: Solderable per MIL-STD-202, Method 208 ID = 2.8 A RDS(ON) = 60mΩ @ VGS = 4.5V z RDS(ON) = 70mΩ @ VGS = 2.5V See Diagram below (top view) Pin configurations Low VGS(TH) D Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Fully Characterized Avalanche Voltage and Current z G General Description S Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification z Package Information ③ ① ② SOT23 Unit:mm z Absolute Maximum Ratings @TA = 25℃ unless otherwise noted Parameter Symbol Ratings Drain-Source Voltage VDSS 20 Gate-Source Voltage VGSS ±12 Drain Current (Note 1) ID 2.8 A Power Dissipation (Note 1) PD 350 mW TJ, TSTG -55 to +150 °C Operating and Storage Temperature Range Unit V Note: 1. Mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch, for each single die. 1/3 SI230 6 z Electrical Characteristics @ TA = 25°C unless otherwise specified Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250uA 20 25 -- V Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V -- -- 1 uA Gate-Body Leakage IGSS VGS = ±12V, VDS = 0V -- -- ±100 nA VDS = VGS, ID = 250uA 0.6 0.76 -- V VGS = 4.5V, ID = 3A -- 60 70 VGS = 2.5V, ID = 2A -- 70 80 VDS =10V, ID = 6A -- 5 -- -- 562 -- -- 106 -- -- 75 -- -- 4.86 -- -- 0.92 -- -- 1.4 -- ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) Static Drain-Source On-Resistance RDS (ON) Forward Transconductance GFS mΩ S DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG Gate-Source Charge QGS Gate-Drain QGD VDS = 8V, VGS = 0V F = 1.0MHz VDS=10V, ID=6A, VGS=4.5V pF nC SWITCHING CHARACTERISTICS Turn-On Delay Time TD(ON) VDD = 10V, ID = 1Α, -- 18 -- Turn-Off Delay Time TD(OFF) VGEN = 4.5V, RG = 6Ω -- 25 -- ns Note: 2. Short duration test pulse used to minimize self-heating effect. Typical Performance Characteristics 10 10 VGS=2.5,3.0,3.5,4.0,4.5V o 8 ID, Drain current(A) ID, Drain Current (A) z VGS=2.0V 6 4 VGS=1.5V -55 C o 25 C o 125 C 8 6 4 2 2 VGS=1.0V 0 0 1 2 3 4 VDS, Drain-Source Voltage (V) Figure 1. Output Characteristics 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, Gate-to-source Voltage(V) Figure 2. Transfer Characteristics 2/3 SI230 6 1000 60 RDS(ON), Normalized RDS(ON),On Resistance (mOhm) C, Capacitance(pF) 900 800 700 600 500 400 300 200 100 0 0 5 10 15 45 40 35 30 1.0 IS, Source-Drain Current (A) 10 0.8 0.6 0.4 0.2 0 50 100 o 0 50 100 o 150 Tj, Junction Temperature ( C) Figure 4. On Resistance Vs. Temperature Figure 3. Capacitance VTH, Gate-Source Threshold Voltage (V) 50 25 -50 20 VDS, Drain-to-Source Voltage(V) 0.0 -50 55 150 Tj, Junction Temperature ( C) Figure 5. Gate Thershold Vs. Temperature 1 o 125 C 10 0 o 25 C 10 -1 o -55 C 10 -2 10 -3 0.0 0.3 0.6 0.9 1.2 1.5 VSD, Body Diode Forward Voltage (v) Figure 6. Body Diode Forward Voltage Vs. Source Current 3/ 3