FTA20N60A 销售电话：13641469108廖先生 QQ:543158798 N-Channel MOSFET Lead Free Package and Finish Pb Applications: • Adaptor • TV Main Power • SMPS Power Supply • LCD Panel Power VDSS RDS(ON) (Typ.) ID 600 V 0.35 20 A D Features: • RoHS Compliant • Low ON Resistance • Low Gate Charge • Peak Current vs Pulse Width Curve G Ordering Information PART NUMBER PACKAGE FTA20N60A TO-220F VDSS ID@ 100 C Parameter FTA20N60A (NOTE *1) 600 Continuous Drain Current o IDM S Packages Not to Scale FTA20N60A Drain-to-Source Voltage ID TO-220F TC=25 oC unless otherwise specified Absolute Maximum Ratings Symbol BRAND G D S Figure 3 Pulsed Drain Current, VGS@ 10V (NOTE *2) A Figure 6 Power Dissipation Derating Factor above 25 C V 20.0 Continuous Drain Current PD Units 60 o W 2.00.48 o W/ C VGS Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Engergy L=10 mH 1000 mJ IAS Pulsed Avalanche Rating Figure 8 A dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TL TPKG Maximum Temperature for Soldering Leads at 0.063 in (1.6 mm) from Case for 10 seconds Package Body for 10 seconds TJ and TSTG (NOTE *3) 300 260 Operating Junction and Storage Temperature Range o C -55 to 150 * Drain Current Limited by Maximum Junction Temperature Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device. Thermal Resistance Symbol R JC Parameter Junction-to-Case FTA20N60A Units Drain lead soldered to water cooled heatsink, PD ad- 2.08 o o R JA Junction-to-Ambient ©2010 InPower Semiconductor Co., Ltd. 100 Test Conditions C/W peak junction temperature of +150 C. 1 cubic foot chamber, free air. Page 1 of 9 FTA20N60A REV. B. Apr. 2010 justed for a OFF Characteristics Symbol BVDSS BVDSS / TJ IDSS IGSS o TJ=25 C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage BreakdownVoltage Temperature Coefficient, Figure 11. Min. Typ. Max. Units Test Conditions 600 -- -- V VGS=0V, I D=250μA -- 0.51 -- o -- -- 10 Drain-to-Source Leakage Current Gate-to-Source Reverse Leakage Symbol V/ C o VDS=600V, VGS=0V μA Gate-to-Source Forward Leakage ON Characteristics Reference to 25 C, ID=250μA -- -- 250 -- -- 100 -- VDS=480V, VGS=0V oT J=125 C VGS=+30V nA -- -100 Min. Typ. Max. -- 0.35 0.45 2.0 -- 4.0 V -- 15 -- S VGS= -30V TJ=25 oC unless otherwise specified Parameter RDS(ON) Static Drain-to-Source On-Resistance Figure 9 and 10. VGS(TH) Gate Threshold Voltage, Figure 12. gfs Forward Transconductance Units Test Conditions VGS=10V, I D=9.0A (NOTE *4) VDS=VGS, ID=250 A VDS=15V, ID=10A (NOTE *4) Dynamic Characteristics Symbol Essentially independent of operating temperature Min. Typ. Max. Ciss Input Capacitance Parameter -- 2830 -- Coss Output Capacitance -- 245 -- Crss Reverse Transfer Capacitance -- 17 -- Qg Total Gate Charge -- 55 -- Q gs Gate-to-Source Charge -- 14 -- Q gd Gate-to-Drain (“Miller”) Charge -- 21 -- Resistive Switching Characteristics Symbol Parameter Units Test Conditions VGS=0V VDS=25V pF f =1.0MHz Figure 14 VDD=300V ID=18A nC Figure 15 Essentially independent of operating temperature Min. Typ. Max. td(ON) Turn-on Delay Time -- 40 -- trise Rise Time -- 75 -- Units Test Conditions VDD=300V ID=18A ns td(OFF) Turn-Off Delay Time -- 150 -- VGS=10V tfall Fall Time -- 80 -- RG=25 ©2010 InPower Semiconductor Co., Ltd. Page 2 of 9 FTA20N60A REV. B. Apr. 2010 Source-Drain Diode Characteristics Symbol o Tc=25 C unless otherwise specified Parameter Min. Typ. Max. Units Test Conditions Integral pn-diode in MOSFET IS Continuous Source Current (Body Diode) -- -- 20 A ISM Maximum Pulsed Current (Body Diode) -- -- 80 A VSD Diode Forward Voltage -- -- 1.5 Reverse Recovery Time -- 615 -- V ns IS=20A, VGS=0V trr Qrr Reverse Recovery Charge -- 5.8 -- nC IF=20A, di/dt=100 A/μs VGS=0V Notes: *1. TJ = +25 oC to +150 oC. *2. Repetitive rating; pulse width limited by maximum junction temperature. *3. ISD= 20 A, di/dt < 100 A/μs, VDD < BVDSS, TJ=+150 oC. *4. Pulse width < 380μs; duty cycle < 2%. ©2010 InPower Semiconductor Co., Ltd. Page 3 of 9 FTA20N60A REV. B. Apr. 2010 Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case Duty Factor 1.000 50% 20% Thermal Impedance 0.100 (Normalized) 10% 5% 2% PDM 0.010 1% t1 t2 JC, 0.001 Z NOTES: DUTY FACTOR: D=t1/t2 PEAK TJ=PDM x Z JC x R JC+TC single pulse 0.0001 1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1E+0 10E+0 tp, Rectangular Pulse Duration (s) Figure 3. Maximum Continuous Drain Current vs Case Temperature Maximum Power Dissipation vs Case Temperature Figure 2. 75 20 PD, Power 60 (W) Dissipation ID, Drain15 Current (A) 45 10 30 5 15 0 0 25 75 50 125 100 150 25 50 2.1 PULSE DURATION = 250 μS DUTY FACTOR = 0.5% MAX, TC = 25 oC 125 150 o PULSE DURATION = 10 μS DUTY FACTOR = 0.5% MAX TC = 25 oC 15V VG S= RDS(ON), Drain-to-Source ON Resistance ( VGS = 7.0V ID, Drain 15 Current (A) 100 Figure 5. Typical Drain-to-Source ON Resistance vs Gate Voltage and Drain Current Figure 4. Typical Output Characteristics 20 75 TC, Case Temperature ( C) TC, Case Temperature (oC) 1.4 VGS = 6.5V ID = 40A ID = 20A ID = 10A ID = 5.0A 10 VGS = 6.0V 0.7 VGS = 5.5V 5 VGS = 5.0V 0.0 0 0 3 6 9 12 15 18 4 VDS, Drain-to-Source Voltage (V) ©2010 InPower Semiconductor Co., Ltd. 6 8 10 12 14 VGS, Gate-to-Source Voltage (V) Page 4 of 9 FTA20N60A REV. B. Apr. 2010 Figure 6. Maximum Peak Current Capability 1000 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25 oC DERATE PEAK CURRENT AS FOLLOWS: IDM, Peak Current100 (A) = –--------------------- 10 VGS = 10V 1 10E-6 100E-6 1E-3 10E-3 100E-3 1E+0 10E+0 tp, Pulse Width (s) Figure 7. Typical Transfer Characteristics Unclamped Inductive Switching Capability Figure 8. 25 100 PULSE DURATION = 380 μs DUTY CYCLE = 0.5% MAX ID, VDS = 30 V Drain-to-Sourc 20 e Current (A) IAS, Avalanche Current (A) STARTING TJ = 25 oC 10 15 STARTING TJ = 150 oC 10 1 +150 oC +25 oC -55 oC 5 If R= 0: tAV= (L×IAS)/(1.3BVDSS-VDD) If R 0: tAV= (L/R) ln[IAS×R)/(1.3BVDSS-VDD)+1] R equals total Series resistance of Drain circuit 0 4 7 5 6 7 0.1 1E-6 100E-6 10E-6 1E-3 10E-3 tAV, Time in Avalanche (s) VGS, Gate-to-Source Voltage (V) Figure 9. Typical Drain-to-Source ON Resistance vs Drain Current Figure 10. Typical Drain-to-Source ON Resistance vs Junction Temperature 1.8 2.75 RDS(ON), 1.5 Drain-to-Source ON Resistance 1.2 () PULSE DURATION = 10 μs DUTY CYCLE = 0.5% MAX TC=25°C 2.50 RDS(ON), Resistance 2.25 Drain-to-Source (Normalized) 2.00 1.75 1.50 0.9 V= 10V GS 1.25 0.6 1.00 0.75 0.3 PULSE DURATION = 10 μs DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 10.0A 0.50 0.0 0.25 0 5 10 15 20 25 30 -75 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (oC) ID, Drain Current (A) ©2010 InPower Semiconductor Co., Ltd. -50 Page 5 of 9 FTA20N60A REV. B. Apr. 2010 Figure 11. Typical Breakdown Voltage vs Junction Temperature Figure 12. Typical Threshold Voltage vs Junction Temperature 1.2 1.15 BVDSS, Drain-to-Source Breakdown 1.10 Voltage (Normalized) VGS(TH), 1.1 Threshold Voltage 1.0 (Normalized) 1.05 0.9 0.8 1.00 0.7 0.95 0.6 VGS = 0V ID = 250 μA VGS = VDS ID = 250 μA 0.5 0.90 -75 -50 -25 0 25 50 75 100 125 150 -75 -50 -25 25 50 75 100 125 150 TJ, Junction Temperature (oC) TJ, Junction Temperature (oC) Figure 13. 0 Figure 14. Typical Capacitance vs Drain-to-Source Voltage Maximum Forward Bias Safe Operating Area 100.0 10000 10μs ID, Drain Current (A) 100μ 10.0 Ciss C, Capacitance 1000 (pF) Coss 1ms 1.0 100 10ms OPERATION IN THIS AREA MAY BE LIMITED BY R DC DS(ON) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd Coss Cds + Cgd Crss = Cgd 10 TJ = MAX RATED TC = 25 oC 0.1 Crss 1 1 10 100 1000 0.1 1 VDS, Drain-to-Source Voltage (V) Figure 15. 10 100 1000 VDS, Drain Voltage (V) Typical Gate Charge vs Gate-to-Source Voltage Figure 16. Typical Body Diode Transfer Characteristics 60 12 VGS, Gate-to-Source 10 Voltage (V) ISD, Reverse Drain Current 50 (A) VDS = 150V VDS = 300V VDS = 480V 8 40 6 30 4 20 +150 oC +25 oC 10 2 ID = 18A VGS = 0V 0 0 10 20 30 40 50 60 0 0.2 QG , Total Gate Charge (nC) ©2010 InPower Semiconductor Co., Ltd. 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-to-Drain Voltage (V) Page 6 of 9 FTA20N60A REV. B. Apr. 2010 Test Circuits and Waveforms VDS ID ID VDS VGS Miller Region VGS VDD D.U.T. VGS(TH) 1 mA Qgs Qgd Qg Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveform VDS RL 90% VDS VGS RG VDD D.U.T. 10% VGS td(ON) Figure 19. Resistive Switching Test Circuit ©2010 InPower Semiconductor Co., Ltd. trise td(OFF) tfall Figure 20. Resistive Switching Waveforms Page 7 of 9 FTA20N60A REV. B. Apr. 2010 Test Circuits and Waveforms di/dt adj. Current Pump di/dt = 100A/μA ID Double Pulse VDD D.U.T. Qrr L trr ID Figure 22. Diode Reverse Recovery Waveform Figure 21. Diode Reverse Recovery Test Circuit BVDSS Series Switch (MOSFET) L IAS BVDSS VDD D.U.T. Commutating Diode VGS VDD 0 tAV 50 IAS VGS tp E AS Figure 23. Unclamped Inductive Switching Test Circuit ©2010 InPower Semiconductor Co., Ltd. I AS 2 L 2 Figure 24. Unclamped Inductive Switching Waveforms Page 8 of 9 FTA20N60A REV. B. Apr. 2010 Disclaimers: InPower Semiconductor Co., Ltd (IPS) reserves the right to make changes without notice in order to improve reliability, function or design and to discontinue any product or service without notice. Customers should obtain the latest relevant information before orders and should verify that such information is current and complete. All products are sold subject to IPS’s terms and conditions supplied at the time of order acknowledgement. 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Life support devices or systems are devices or systems which: a. are intended for surgical implant into the human body, b. support or sustain life, c. whose failure to perform when properly used in accordance with instructions for used provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ©2010 InPower Semiconductor Co., Ltd. Page 9 of 9 FTA20N60A REV. B. Apr. 2010