SIRECTIFIER SUR2060CT

SUR2060CT
Ultra Fast Recovery Epitaxial Diodes
A
C
A
Dimensions TO-220AB
A
C
A
C(TAB)
A=Anode, C=Cathode, TAB=Cathode
SUR2060CT
VRSM
V
600
Symbol
IFRMS
IFAVM
IFRM
IFSM
Test Conditions
Milimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
Unit
TVJ=TVJM
TC=100oC; rectangular, d=0.5
tp<10us; rep. rating, pulse width limited by TVJM
25
10
150
A
TVJ=45oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
100
110
85
95
A
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
50
50
36
37
A2s
TVJ=150oC
TVJ=150oC
-40...+150
150
-40...+150
TVJ
TVJM
Tstg
Ptot
TC=25oC
Md
Mounting torque
Weight
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Maximum Ratings
TVJ=45oC
I2t
VRRM
V
600
Dim.
o
C
62
W
0.4...0.6
Nm
2
g
SUR2060CT
Ultra Fast Recovery Epitaxial Diodes
Symbol
Test Conditions
Characteristic Values
typ.
max.
Unit
IR
TVJ=25oC; VR=VRRM
TVJ=25oC; VR=0.8.VRRM
TVJ=125oC; VR=0.8.VRRM
50
25
3
uA
uA
mA
VF
IF=16A; TVJ=150oC
TVJ=25oC
1.5
1.7
V
VTO
For power-loss calculations only
1.12
V
TVJ=TVJM
23.2
rT
RthJC
RthCK
RthJA
trr
IRM
m
2
K/W
0.5
60
IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC
o
_
VR=350V; IF=10A; -diF/dt=100A/us; L<0.05uH;
TVJ=100 C
35
50
ns
4
4.4
A
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
JEDEC TO-220AB
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
SUR2060CT
Ultra Fast Recovery Epitaxial Diodes
F ig. 1 F orward current
vers us voltage drop.
F ig. 2 R ecovery charge vers us -diF /dt.
F ig. 3 P eak revers e current vers us
-diF /dt.
F ig. 4 Dynamic parameters vers us
junction temperature.
F ig. 5 R ecovery time vers us -diF /dt.
F ig. 6 P eak forward voltage
vers us diF /dt.
F ig. 7 T rans ient thermal impedance junction to cas e.