EUDYNA FLM1314-6F

FLM1314-6F
X, Ku-Band Internally Matched FET
FEATURES
•
•
•
•
•
•
High Output Power: P1dB = 37.5dBm (Typ.)
High Gain: G1dB = 5.5dB (Typ.)
High PAE: ηadd = 22% (Typ.)
Broad Band: 13.75 ~ 14.5GHz
Impedance Matched Zin/Zout = 50Ω
Hermetically Sealed
DESCRIPTION
The FLM1314-6F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
31.2
W
Total Power Dissipation
Tc = 25°C
PT
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C
Min.
Limit
Typ. Max.
Unit
VDS = 5V, VGS = 0V
-
2800 4200
mA
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 26.0 and -2.8 mA respectively with
gate resistance of 100Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Symbol
IDSS
Test Conditions
Transconductance
gm
VDS = 5V, IDS =1800mA
-
2350
-
mS
Pinch-off Voltage
Vp
VDS = 5V, IDS =120mA
-0.5
-1.5
-3.0
V
IGS = -120µA
-5.0
-
-
V
36.5
37.5
-
dBm
5.0
5.5
-
dB
Gate Source Breakdown Voltage
VGSO
Output Power at 1dB G.C.P.
P1dB
Power Gain at 1dB G.C.P.
G1dB
Drain Current
Power-added Efficiency
Gain Flatness
Idsr
ηadd
VDS =10V,
IDS = 0.6 IDSS (Typ.),
f = 13.75 ~ 14.5 GHz,
ZS=ZL=50 ohm
∆G
-
1800 2100
mA
-
22
-
%
-
-
±0.6
dB
-42
-45
-
dBc
3rd Order Intermodulation
Distortion
IM3
f = 14.5GHz, ∆f = 10 MHz
2-Tone Test
Pout =26.5dBm S.C.L.
Thermal Resistance
Rth
Channel to Case
-
4.0
4.5
°C/W
∆Tch
10V x Idsr x Rth
-
-
80
°C
Channel Temperature Rise
CASE STYLE: IA
Edition 1.4
August 2004
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
1
FLM1314-6F
X, Ku-Band Internally Matched FET
OUTPUT POWER & IM3 vs. INPUT POWER
40
30
20
10
34
VDS=10V
f1 = 14.5 GHz
f2 = 14.51 GHz
2-tone test
32
Pout
30
-10
28
-20
26
-30
IM3
IM3 (dBc)
Output Power (S.C.L.) (dBc)
Total Power Dissipation (W)
POWER DERATING CURVE
-40
24
-50
50
100
150
200
22
24
26
OUTPUT POWER vs. FREQUENCY
OUTPUT POWER vs. INPUT POWER
VDS = 10V
P1dB
VDS = 10V
f = 1415 GHz
38
38
30dBm
36
28dBm
34
26dBm
32
Output Power (dBm)
Pin = 32dBm
Pout
36
34
32
30
ηadd
30
13.7
28
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
Case Temperature (°C)
Output Power (dBm)
20
13.9
14.1
14.3
14.5
22
Frequency (GHz)
24
26
28
30
Input Power (dBm)
2
ηadd (%)
0
18
15
32
FLM1314-6F
X, Ku-Band Internally Matched FET
S11
S22
+j50
S21
S12
+90°
+j100
+j25
+j250
13.9
13.7
13.5 GHz
13.7
25
50Ω
14.5
13.9
13.5 GHz
180°
14.1
14.3
14.5
14.3
14.1
-j10
-j25
4
3
14.5
14.5
13.5 GHz
2
1
0°
SCALE FOR |S21|
13.7
SCALE FOR |S12|
10
14.3
14.1 14.3
13.7
+j10
0
14.1
13.9
13.5 GHz
13.9
-j250
-j100
0.1
0.2
-90°
-j50
S11
S-PARAMETERS
VDS = 10V, IDS = 1800mA
S21
S12
MAG
ANG
MAG
ANG
FREQUENCY
(MHZ)
MAG
ANG
13500
.467
64.7
2.029
159.9
.080
148.2
.500
5.2
13600
.432
51.8
2.085
149.3
.085
137.4
.482
-5.2
13700
.393
37.8
2.143
138.5
.091
126.7
.465
-15.9
13800
.356
22.9
2.191
127.5
.096
114.5
.440
-26.8
13900
.319
6.2
2.226
116.3
.101
103.8
.413
-37.2
14000
.283
-12.0
2.255
105.2
.106
92.5
.379
-48.3
14100
.256
-32.6
2.266
93.9
.109
81.3
.344
-59.7
14200
.234
-55.5
2.267
82.4
.111
70.2
.307
-72.7
14300
.232
-78.9
2.251
71.1
.114
59.1
.271
-86.9
14400
.237
-101.4
2.219
59.9
.114
47.2
.240
-102.9
14500
.252
-122.2
2.176
48.8
.114
37.2
.214
-121.4
3
S22
MAG
ANG
FLM1314-6F
X, Ku-Band Internally Matched FET
1.5 Min.
(0.059)
Case Style "IA"
Metal-Ceramic Hermetic Package
1
0.1
(0.004)
9.7±0.15
(0.382)
2-R 1.25±0.15
(0.049)
4
2
3
1.8±0.15
(0.071)
1.5 Min.
(0.059)
0.5
(0.020)
3.2 Max.
(0.126)
13.0±0.15
(0.512)
1.15
(0.045)
0.2 Max.
(0.008)
8.1
(0.319)
1.
2.
3.
4.
Gate
Source (Flange)
Drain
Source (Flange)
Unit: mm(inches)
16.5±0.15
(0.650)
For further information please contact:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
CAUTION
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
www.us.eudyna.com
• Do not put this product into the mouth.
Eudyna Devices Europe Ltd.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
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