FLM1314-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 37.5dBm (Typ.) High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 22% (Typ.) Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM1314-6F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 31.2 W Total Power Dissipation Tc = 25°C PT Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C Min. Limit Typ. Max. Unit VDS = 5V, VGS = 0V - 2800 4200 mA Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 26.0 and -2.8 mA respectively with gate resistance of 100Ω. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Symbol IDSS Test Conditions Transconductance gm VDS = 5V, IDS =1800mA - 2350 - mS Pinch-off Voltage Vp VDS = 5V, IDS =120mA -0.5 -1.5 -3.0 V IGS = -120µA -5.0 - - V 36.5 37.5 - dBm 5.0 5.5 - dB Gate Source Breakdown Voltage VGSO Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Drain Current Power-added Efficiency Gain Flatness Idsr ηadd VDS =10V, IDS = 0.6 IDSS (Typ.), f = 13.75 ~ 14.5 GHz, ZS=ZL=50 ohm ∆G - 1800 2100 mA - 22 - % - - ±0.6 dB -42 -45 - dBc 3rd Order Intermodulation Distortion IM3 f = 14.5GHz, ∆f = 10 MHz 2-Tone Test Pout =26.5dBm S.C.L. Thermal Resistance Rth Channel to Case - 4.0 4.5 °C/W ∆Tch 10V x Idsr x Rth - - 80 °C Channel Temperature Rise CASE STYLE: IA Edition 1.4 August 2004 G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level 1 FLM1314-6F X, Ku-Band Internally Matched FET OUTPUT POWER & IM3 vs. INPUT POWER 40 30 20 10 34 VDS=10V f1 = 14.5 GHz f2 = 14.51 GHz 2-tone test 32 Pout 30 -10 28 -20 26 -30 IM3 IM3 (dBc) Output Power (S.C.L.) (dBc) Total Power Dissipation (W) POWER DERATING CURVE -40 24 -50 50 100 150 200 22 24 26 OUTPUT POWER vs. FREQUENCY OUTPUT POWER vs. INPUT POWER VDS = 10V P1dB VDS = 10V f = 1415 GHz 38 38 30dBm 36 28dBm 34 26dBm 32 Output Power (dBm) Pin = 32dBm Pout 36 34 32 30 ηadd 30 13.7 28 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level Case Temperature (°C) Output Power (dBm) 20 13.9 14.1 14.3 14.5 22 Frequency (GHz) 24 26 28 30 Input Power (dBm) 2 ηadd (%) 0 18 15 32 FLM1314-6F X, Ku-Band Internally Matched FET S11 S22 +j50 S21 S12 +90° +j100 +j25 +j250 13.9 13.7 13.5 GHz 13.7 25 50Ω 14.5 13.9 13.5 GHz 180° 14.1 14.3 14.5 14.3 14.1 -j10 -j25 4 3 14.5 14.5 13.5 GHz 2 1 0° SCALE FOR |S21| 13.7 SCALE FOR |S12| 10 14.3 14.1 14.3 13.7 +j10 0 14.1 13.9 13.5 GHz 13.9 -j250 -j100 0.1 0.2 -90° -j50 S11 S-PARAMETERS VDS = 10V, IDS = 1800mA S21 S12 MAG ANG MAG ANG FREQUENCY (MHZ) MAG ANG 13500 .467 64.7 2.029 159.9 .080 148.2 .500 5.2 13600 .432 51.8 2.085 149.3 .085 137.4 .482 -5.2 13700 .393 37.8 2.143 138.5 .091 126.7 .465 -15.9 13800 .356 22.9 2.191 127.5 .096 114.5 .440 -26.8 13900 .319 6.2 2.226 116.3 .101 103.8 .413 -37.2 14000 .283 -12.0 2.255 105.2 .106 92.5 .379 -48.3 14100 .256 -32.6 2.266 93.9 .109 81.3 .344 -59.7 14200 .234 -55.5 2.267 82.4 .111 70.2 .307 -72.7 14300 .232 -78.9 2.251 71.1 .114 59.1 .271 -86.9 14400 .237 -101.4 2.219 59.9 .114 47.2 .240 -102.9 14500 .252 -122.2 2.176 48.8 .114 37.2 .214 -121.4 3 S22 MAG ANG FLM1314-6F X, Ku-Band Internally Matched FET 1.5 Min. (0.059) Case Style "IA" Metal-Ceramic Hermetic Package 1 0.1 (0.004) 9.7±0.15 (0.382) 2-R 1.25±0.15 (0.049) 4 2 3 1.8±0.15 (0.071) 1.5 Min. (0.059) 0.5 (0.020) 3.2 Max. (0.126) 13.0±0.15 (0.512) 1.15 (0.045) 0.2 Max. (0.008) 8.1 (0.319) 1. 2. 3. 4. Gate Source (Flange) Drain Source (Flange) Unit: mm(inches) 16.5±0.15 (0.650) For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.us.eudyna.com • Do not put this product into the mouth. Eudyna Devices Europe Ltd. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4